74AUP1G18GF-74AUP1G18GW Fast Delivery |IC PHOENIX CO.,LIMITED

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74AUP1G18GF-74AUP1G18GW
Low-power 1-of-2 demultiplexer with 3-state deselected output
1. General description
The 74AUP1G18 provides a 1-of-2 non-inverting demultiplexer with 3-state output. The
74AUP1G18 buffers the data on input pin (A) and passes it either to output 1Y or 2Y,
depending on whether the state of the select input pin (S) is LOW or HIGH.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low
static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits Wide supply voltage range from 0.8 Vto 3.6V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 Vto 1.3 V) JESD8-11 (0.9 Vto 1.65V) JESD8-7 (1.2 Vto 1.95V) JESD8-5 (1.8 Vto 2.7V) JESD8-B (2.7 Vto 3.6V) ESD protection: HBM JESD22-A114F Class 3A exceeds 5000V MM JESD22-A115-A exceeds 200V CDM JESD22-C101E exceeds 1000V Low static power consumption; ICC = 0.9 A (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from 40 Cto+85 C and 40 Cto+125C
74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected
output
Rev. 5 — 3 July 2012 Product data sheet
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
3. Ordering information
4. Marking
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Table 1. Ordering information
74AUP1G18GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363
74AUP1G18GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 1.45 0.5 mm
SOT886
74AUP1G18GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 11 0.5 mm
SOT891
74AUP1G18GN 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 0.9 1.0 0.35 mm
SOT1115
74AUP1G18GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.0 1.0 0.35 mm
SOT1202
Table 2. Marking
74AUP1G18GW pW
74AUP1G18GM pW
74AUP1G18GF pW
74AUP1G18GN pW
74AUP1G18GS pW
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
6. Pinning information
6.1 Pinning
6.2 Pin description
7. Functional description
[1] H= HIGH voltage level;= LOW voltage level;= high-impedance OFF-state.
Table 3. Pin description 1 data select
GND 2 ground (0V) 3 data input 4 data output
VCC 5 supply voltage 6 data output
Table 4. Function table[1] LZ H Z Z L Z H
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
8. Limiting values
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +4.6 V
IIK input clamping current VI <0V 50 - mA input voltage [1] 0.5 +4.6 V
IOK output clamping current VO <0V 50 - mA output voltage Active mode and Power-down
mode
[1] 0.5 +4.6 V output current VO =0 Vto VCC - 20 mA
ICC supply current - 50 mA
IGND ground current 50 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb= 40 C to +125C [2]- 250 mW
Table 6. Recommended operating conditions
VCC supply voltage 0.8 3.6 V input voltage 0 3.6 V output voltage Active mode 0 VCC V
Power-down mode; VCC =0V 0 3.6 V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VCC= 0.8 V to 3.6V 0 200 ns/V
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
10. Static characteristicsTable 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb = 25 C
VIH HIGH-level input voltage VCC = 0.8 V 0.70  VCC -- V
VCC = 0.9 V to 1.95 V 0.65  VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.30  VCCV
VCC = 0.9 V to 1.95 V - - 0.35  VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.1 - - V
IO = 1.1 mA; VCC = 1.1 V 0.75  VCC -- V
IO = 1.7 mA; VCC = 1.4 V 1.11 - - V
IO = 1.9 mA; VCC = 1.65 V 1.32 - - V
IO = 2.3 mA; VCC = 2.3 V 2.05 - - V
IO = 3.1 mA; VCC = 2.3 V 1.9 - - V
IO = 2.7 mA; VCC = 3.0 V 2.72 - - V
IO = 4.0 mA; VCC = 3.0 V 2.6 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V
IO = 1.1 mA; VCC = 1.1 V - - 0.3  VCC V
IO = 1.7 mA; VCC = 1.4 V - - 0.31 V
IO = 1.9 mA; VCC = 1.65 V - - 0.31 V
IO = 2.3 mA; VCC = 2.3 V - - 0.31 V
IO = 3.1 mA; VCC = 2.3 V - - 0.44 V
IO = 2.7 mA; VCC = 3.0 V - - 0.31 V
IO = 4.0 mA; VCC = 3.0 V - - 0.44 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.1 A
IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6V;
VCC = 0 V to 3.6 V 0.1 A
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.2 A
IOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V 0.2 A
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 0.5 A
ICC additional supply current VI = VCC  0.6 V; IO = 0A;
VCC =3.3V
[1] -- 40 A input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC -0.8 -pF output capacitance VO = GND; VCC = 0 V - 1.7 - pF
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
Tamb = 40 C to +85C
VIH HIGH-level input voltage VCC = 0.8 V 0.70  VCC -- V
VCC = 0.9 V to 1.95 V 0.65  VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.30  VCCV
VCC = 0.9 V to 1.95 V - - 0.35  VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.1 - - V
IO = 1.1 mA; VCC = 1.1 V 0.7  VCC -- V
IO = 1.7 mA; VCC = 1.4 V 1.03 - - V
IO = 1.9 mA; VCC = 1.65 V 1.30 - - V
IO = 2.3 mA; VCC = 2.3 V 1.97 - - V
IO = 3.1 mA; VCC = 2.3 V 1.85 - - V
IO = 2.7 mA; VCC = 3.0 V 2.67 - - V
IO = 4.0 mA; VCC = 3.0 V 2.55 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V
IO = 1.1 mA; VCC = 1.1 V - - 0.3  VCC V
IO = 1.7 mA; VCC = 1.4 V - - 0.37 V
IO = 1.9 mA; VCC = 1.65 V - - 0.35 V
IO = 2.3 mA; VCC = 2.3 V - - 0.33 V
IO = 3.1 mA; VCC = 2.3 V - - 0.45 V
IO = 2.7 mA; VCC = 3.0 V - - 0.33 V
IO = 4.0 mA; VCC = 3.0 V - - 0.45 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.5 A
IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6V;
VCC = 0 V to 3.6 V 0.5 A
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.5 A
IOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V 0.6 A
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 0.9 A
ICC additional supply current VI = VCC  0.6 V; IO = 0A;
VCC =3.3V
[1] -- 50 A
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
[1] One input at VCC  0.6 V, other input at VCC or GND.
Tamb = 40 C to +125C
VIH HIGH-level input voltage VCC = 0.8 V 0.75  VCC -- V
VCC = 0.9 V to 1.95 V 0.70  VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.25  VCCV
VCC = 0.9 V to 1.95 V - - 0.30  VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.11- - V
IO = 1.1 mA; VCC = 1.1 V 0.6  VCC -- V
IO = 1.7 mA; VCC = 1.4 V 0.93 - - V
IO = 1.9 mA; VCC = 1.65 V 1.17 - - V
IO = 2.3 mA; VCC = 2.3 V 1.77 - - V
IO = 3.1 mA; VCC = 2.3 V 1.67 - - V
IO = 2.7 mA; VCC = 3.0 V 2.40 - - V
IO = 4.0 mA; VCC = 3.0 V 2.30 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.11 V
IO = 1.1 mA; VCC = 1.1 V - - 0.33  VCCV
IO = 1.7 mA; VCC = 1.4 V - - 0.41 V
IO = 1.9 mA; VCC = 1.65 V - - 0.39 V
IO = 2.3 mA; VCC = 2.3 V - - 0.36 V
IO = 3.1 mA; VCC = 2.3 V - - 0.50 V
IO = 2.7 mA; VCC = 3.0 V - - 0.36 V
IO = 4.0 mA; VCC = 3.0 V - - 0.50 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.75 A
IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6V;
VCC = 0 V to 3.6 V 0.75 A
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.75 A
IOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V 0.75 A
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 1.4 A
ICC additional supply current VI = VCC  0.6 V; IO = 0A;
VCC =3.3V
[1] -- 75 A
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
11. Dynamic characteristicsTable 8. Dynamic characteristics
Voltages are referenced to GND (ground=0 V); for test circuit see Figure7.
CL = 5 pF
tpd propagation delayAto nY; see Figure5 [2]
VCC = 0.8 V - 20.4 - - - - ns
VCC = 1.1 V to 1.3 V 2.7 5.6 10.6 2.4 10.7 10.7 ns
VCC = 1.4 V to 1.6 V 2.4 3.9 6.1 2.2 6.5 6.7 ns
VCC = 1.65 V to 1.95 V 1.8 3.1 4.7 1.6 5.3 5.6 ns
VCC = 2.3 V to 2.7 V 1.6 2.4 3.6 1.4 4.0 4.2 ns
VCC = 3.0 V to 3.6 V 1.4 2.2 3.1 1.2 3.4 3.5 ns
ten enable time Sto nY; see Figure6 [3] -
VCC = 0.8 V - 46.1 - - - - ns
VCC = 1.1 V to 1.3 V 3.1 5.6 9.7 2.9 10.1 11.1 ns
VCC = 1.4 V to 1.6 V 2.5 4.0 6.2 2.2 6.6 7.3 ns
VCC = 1.65 V to 1.95 V 2.1 3.3 5.1 1.8 5.5 6.1 ns
VCC = 2.3 V to 2.7 V 1.7 2.7 3.9 1.4 4.2 4.6 ns
VCC = 3.0 V to 3.6 V 1.5 2.4 3.5 1.2 3.7 4.1 ns
tdis disable time Sto nY; see Figure6 [4]
VCC = 0.8 V - 12.6 - - - - ns
VCC = 1.1 V to 1.3 V 3.0 4.7 7.5 2.9 7.9 8.7 ns
VCC = 1.4 V to 1.6 V 2.3 3.5 5.2 2.2 5.5 6.1 ns
VCC = 1.65 V to 1.95 V 2.3 3.4 4.8 2.1 5.1 5.6 ns
VCC = 2.3 V to 2.7 V 1.7 2.5 3.6 1.5 3.9 4.3 ns
VCC = 3.0 V to 3.6 V 2.0 2.9 3.8 1.8 4.1 4.5 ns
CL = 10 pF
tpd propagation delayAto nY; see Figure5 [2]
VCC = 0.8 V - 23.9 - - - - ns
VCC = 1.1 V to 1.3 V 2.9 6.4 12.2 2.9 12.3 12.3 ns
VCC = 1.4 V to 1.6 V 2.7 4.5 7.1 2.4 7.6 7.9 ns
VCC = 1.65 V to 1.95 V 2.3 3.7 5.5 2.1 6.0 6.3 ns
VCC = 2.3 V to 2.7 V 1.9 3.0 4.2 1.8 4.6 4.9 ns
VCC = 3.0 V to 3.6 V 1.8 2.7 3.9 1.6 4.1 4.3 ns
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
ten enable time Sto nY; see Figure6 [3]
VCC = 0.8 V - 50.1 - - - - ns
VCC = 1.1 V to 1.3 V 3.6 6.5 11.1 3.3 11.6 12.8 ns
VCC = 1.4 V to 1.6 V 2.9 4.6 7.0 2.6 7.6 8.4 ns
VCC = 1.65 V to 1.95 V 2.5 3.9 5.8 2.2 6.3 6.9 ns
VCC = 2.3 V to 2.7 V 2.1 3.2 4.6 1.7 4.9 5.4 ns
VCC = 3.0 V to 3.6 V 2.0 2.9 4.2 1.6 4.4 4.8 ns
tdis disable time Sto nY; see Figure6 [4]
VCC = 0.8 V - 14.5 - - - - ns
VCC = 1.1 V to 1.3 V 4.1 5.8 8.7 3.9 9.1 10.0 ns
VCC = 1.4 V to 1.6 V 3.2 4.4 6.1 3.0 6.5 7.2 ns
VCC = 1.65 V to 1.95 V 3.3 4.5 6.0 3.2 6.3 6.9 ns
VCC = 2.3 V to 2.7 V 2.4 3.3 4.4 2.2 4.7 5.2 ns
VCC = 3.0 V to 3.6 V 3.1 4.1 5.2 3.0 5.5 6.1 ns
CL = 15 pF
tpd propagation delayAto nY; see Figure5 [2]
VCC = 0.8 V - 27.4 - ns
VCC = 1.1 V to 1.3 V 3.4 7.2 13.7 3.2 13.9 13.9 ns
VCC = 1.4 V to 1.6 V 3.2 5.0 7.9 2.8 8.7 9.1 ns
VCC = 1.65 V to 1.95 V 2.5 4.2 6.3 2.4 7.0 7.4 ns
VCC = 2.3 V to 2.7 V 2.3 3.4 4.9 2.2 5.3 5.7 ns
VCC = 3.0 V to 3.6 V 2.2 3.2 4.4 1.9 4.8 5.0 ns
ten enable time Sto nY; see Figure6 [3]
VCC = 0.8 V - 53.9 - ns
VCC = 1.1 V to 1.3 V 4.1 7.3 12.4 3.6 12.9 14.2 ns
VCC = 1.4 V to 1.6 V 3.3 5.2 7.8 2.9 8.4 9.2 ns
VCC = 1.65 V to 1.95 V 2.9 4.4 6.4 2.5 7.0 7.7 ns
VCC = 2.3 V to 2.7 V 2.5 3.6 5.2 2.1 5.5 6.1 ns
VCC = 3.0 V to 3.6 V 2.3 3.4 4.8 1.9 4.9 5.4 ns
tdis disable time Sto nY; see Figure6 [4]
VCC = 0.8 V - 16.3 - ns
VCC = 1.1 V to 1.3 V 5.1 6.9 10.0 4.9 10.4 11.4 ns
VCC = 1.4 V to 1.6 V 4.0 5.3 7.1 3.8 7.4 8.1 ns
VCC = 1.65 V to 1.95 V 4.3 5.6 7.3 4.2 7.6 8.4 ns
VCC = 2.3 V to 2.7 V 3.1 4.1 5.3 3.0 5.6 6.2 ns
VCC = 3.0 V to 3.6 V 4.2 5.3 6.6 4.1 6.9 7.6 ns
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V); for test circuit see Figure7.
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
CL = 30 pF
tpd propagation delayAto nY; see Figure5 [2]
VCC = 0.8 V - 37.8 - - - - ns
VCC = 1.1 V to 1.3 V 4.1 9.5 18.0 4.1 18.5 18.9 ns
VCC = 1.4 V to 1.6 V 3.7 6.6 10.4 3.8 11.5 12.1 ns
VCC = 1.65 V to 1.95 V 3.4 5.5 8.3 3.3 9.2 9.8 ns
VCC = 2.3 V to 2.7 V 3.2 4.5 6.3 3.0 6.8 7.3 ns
VCC = 3.0 V to 3.6 V 3.1 4.2 5.8 2.9 6.6 7.0 ns
ten enable time Sto nY; see Figure6 [3]
VCC = 0.8 V - 66.3 - - - - ns
VCC = 1.1 V to 1.3 V 5.3 9.6 16.4 4.7 17.0 18.7 ns
VCC = 1.4 V to 1.6 V 4.4 6.8 10.0 3.9 10.9 12.0 ns
VCC = 1.65 V to 1.95 V 4.0 5.7 8.2 3.4 8.9 9.8 ns
VCC = 2.3 V to 2.7 V 3.4 4.8 6.6 2.9 7.0 7.7 ns
VCC = 3.0 V to 3.6 V 3.2 4.5 6.1 2.8 6.5 7.2 ns
tdis disable time Sto nY; see Figure6 [4]
VCC = 0.8 V - 21.8 - - - - ns
VCC = 1.1 V to 1.3 V 8.2 10.4 14.3 8.0 14.7 16.2 ns
VCC = 1.4 V to 1.6 V 6.5 8.0 10.0 6.3 10.4 11.4 ns
VCC = 1.65 V to 1.95 V 7.4 9.0 11.0 7.3 11.3 12.4 ns
VCC = 2.3 V to 2.7 V 5.3 6.5 7.9 5.2 8.2 9.0 ns
VCC = 3.0 V to 3.6 V 7.6 9.0 10.7 7.4 11.0 12.1 ns
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V); for test circuit see Figure7.
NXP Semiconductors 74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected output
[1] All typical values are measured at nominal VCC.
[2] tpd is the same as tPLH and tPHL.
[3] ten is the same as tPZH and tPZL.
[4] tdis is the same as tPHZ and tPLZ.
[5] CPD is used to determine the dynamic power dissipation (PD in W). =CPD VCC2fi N+ (CL VCC2 fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of the outputs.
12. Waveforms
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD power dissipation
capacitance
fi = 1 MHz; =GNDto VCC
[5]
VCC = 0.8 V - 2.8 - - - - pF
VCC = 1.1 V to 1.3 V - 2.9 - - - - pF
VCC = 1.4 V to 1.6 V - 3.0 - - - - pF
VCC = 1.65 V to 1.95 V - 3.2 - - - - pF
VCC = 2.3 V to 2.7 V - 3.7 - - - - pF
VCC = 3.0 V to 3.6 V - 4.2 - - - - pF
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V); for test circuit see Figure7.
Table 9. Measurement points
0.8 V to 3.6 V 0.5  VCC 0.5  VCC VCC  3.0 ns

Partno	Mfg	Dc	Qty	Available	Descript
74AUP1G18GF	NXP	N/a	10000	avai	Low-power 1-of-2 demultiplexer with 3-state deselected output
74AUP1G18GW	NXP	N/a	12512	avai	Low-power 1-of-2 demultiplexer with 3-state deselected output