74AUP1G08GF-74AUP1G08GM-74AUP1G08GW Fast Delivery |IC PHOENIX CO.,LIMITED

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74AUP1G08GF-74AUP1G08GM-74AUP1G08GW
Low-power 2-input AND gate
1. General description
The 74AUP1G08 provides the single 2-input AND function.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits Wide supply voltage range from 0.8 Vto 3.6V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 Vto 1.3 V) JESD8-11 (0.9 Vto 1.65V) JESD8-7 (1.2 Vto 1.95V) JESD8-5 (1.8 Vto 2.7V) JESD8-B (2.7 Vto 3.6V) ESD protection: HBM JESD22-A114F Class 3A exceeds 5000V MM JESD22-A115-A exceeds 200V CDM JESD22-C101E exceeds 1000V Low static power consumption; ICC = 0.9 μA (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from −40 °Cto+85 °C and −40 °Cto+125°C
74AUP1G08
Low-power 2-input AND gate
Rev. 6 — 22 June 2012 Product data sheet
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
3. Ordering information
4. Marking
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Table 1. Ordering information
74AUP1G08GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74AUP1G08GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1× 1.45× 0.5 mm
SOT886
74AUP1G08GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1×1× 0.5 mm
SOT891
74AUP1G08GN −40 °C to +125°C XSON6 extremely thin small outline package; no leads; terminals; body 0.9× 1.0× 0.35 mm
SOT1115
74AUP1G08GS −40 °C to +125°C XSON6 extremely thin small outline package; no leads; terminals; body 1.0× 1.0× 0.35 mm
SOT1202
74AUP1G08GX −40 °C to +125°C X2SON5 X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8× 0.8× 0.35 mm
SOT1226
Table 2. Marking
74AUP1G08GW pE
74AUP1G08GM pE
74AUP1G08GF pE
74AUP1G08GN pE
74AUP1G08GS pE
74AUP1G08GX pE
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
6. Pinning information
6.1 Pinning
6.2 Pin description
Table 3. Pin description 1 1 data input 2 2 data input
GND 3 3 ground (0V) 4 4 data output
n.c. - 5 not connected
VCC 5 6 supply voltage
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
7. Functional description
[1] H= HIGH voltage level;= LOW voltage level.
8. Limiting values
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 and X2SON5 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 4. Function table[1] L L L H
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage −0.5 +4.6 V
IIK input clamping current VI <0V −50 - mA input voltage [1] −0.5 +4.6 V
IOK output clamping current VO <0V −50 - mA output voltage Active mode and Power-down mode [1] −0.5 +4.6 V output current VO =0 VtoVCC - ±20 mA
ICC supply current - +50 mA
IGND ground current −50 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb= −40 °C to +125°C [2] -250 mW
Table 6. Recommended operating conditions
VCC supply voltage 0.8 3.6 V input voltage 0 3.6 V output voltage Active mode 0 VCC V
Power-down mode; VCC =0V 0 3.6 V
Tamb ambient temperature −40 +125 °C
Δt/ΔV input transition rise and fall rate VCC= 0.8 V to 3.6V 0 200 ns/V
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
10. Static characteristicsTable 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb = 25 °C
VIH HIGH-level input voltage VCC = 0.8 V 0.70 × VCC -- V
VCC = 0.9 V to 1.95 V 0.65 × VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.30 × VCCV
VCC = 0.9 V to 1.95 V - - 0.35 × VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.1- - V
IO = −1.1 mA; VCC = 1.1 V 0.75 × VCC -- V
IO = −1.7 mA; VCC = 1.4 V 1.11 - - V
IO = −1.9 mA; VCC = 1.65 V 1.32 - - V
IO = −2.3 mA; VCC = 2.3 V 2.05 - - V
IO = −3.1 mA; VCC = 2.3 V 1.9 - - V
IO = −2.7 mA; VCC = 3.0 V 2.72 - - V
IO = −4.0 mA; VCC = 3.0 V 2.6 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.1 V
IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V
IO = 1.7 mA; VCC = 1.4 V - - 0.31 V
IO = 1.9 mA; VCC = 1.65 V - - 0.31 V
IO = 2.3 mA; VCC = 2.3 V - - 0.31 V
IO = 3.1 mA; VCC = 2.3 V - - 0.44 V
IO = 2.7 mA; VCC = 3.0 V - - 0.31 V
IO = 4.0 mA; VCC = 3.0 V - - 0.44 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.1 μA
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.2 μA
ΔIOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V ±0.2 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 0.5 μA
ΔICC additional supply current VI = VCC − 0.6 V; IO = 0A;
VCC =3.3V
[1] -- 40 μA input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC -0.8 -pF output capacitance VO = GND; VCC = 0 V - 1.7 - pF
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
Tamb = −40 °C to +85°C
VIH HIGH-level input voltage VCC = 0.8 V 0.70 × VCC -- V
VCC = 0.9 V to 1.95 V 0.65 × VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.30 × VCCV
VCC = 0.9 V to 1.95 V - - 0.35 × VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.1- - V
IO = −1.1 mA; VCC = 1.1 V 0.7 × VCC -- V
IO = −1.7 mA; VCC = 1.4 V 1.03 - - V
IO = −1.9 mA; VCC = 1.65 V 1.30 - - V
IO = −2.3 mA; VCC = 2.3 V 1.97 - - V
IO = −3.1 mA; VCC = 2.3 V 1.85 - - V
IO = −2.7 mA; VCC = 3.0 V 2.67 - - V
IO = −4.0 mA; VCC = 3.0 V 2.55 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.1 V
IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V
IO = 1.7 mA; VCC = 1.4 V - - 0.37 V
IO = 1.9 mA; VCC = 1.65 V - - 0.35 V
IO = 2.3 mA; VCC = 2.3 V - - 0.33 V
IO = 3.1 mA; VCC = 2.3 V - - 0.45 V
IO = 2.7 mA; VCC = 3.0 V - - 0.33 V
IO = 4.0 mA; VCC = 3.0 V - - 0.45 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.5 μA
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.5 μA
ΔIOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V ±0.6 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 0.9 μA
ΔICC additional supply current VI = VCC − 0.6 V; IO = 0A;
VCC =3.3V
[1] -- 50 μA
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
[1] One input at VCC − 0.6 V, other input at VCC or GND.
Tamb = −40 °C to +125°C
VIH HIGH-level input voltage VCC = 0.8 V 0.75 × VCC -- V
VCC = 0.9 V to 1.95 V 0.70 × VCC -- V
VCC = 2.3 V to 2.7 V 1.6 - - V
VCC = 3.0 V to 3.6 V 2.0 - - V
VIL LOW-level input voltage VCC = 0.8 V - - 0.25 × VCCV
VCC = 0.9 V to 1.95 V - - 0.30 × VCCV
VCC = 2.3 V to 2.7 V - - 0.7 V
VCC = 3.0 V to 3.6 V - - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.11- - V
IO = −1.1 mA; VCC = 1.1 V 0.6 × VCC -- V
IO = −1.7 mA; VCC = 1.4 V 0.93 - - V
IO = −1.9 mA; VCC = 1.65 V 1.17 - - V
IO = −2.3 mA; VCC = 2.3 V 1.77 - - V
IO = −3.1 mA; VCC = 2.3 V 1.67 - - V
IO = −2.7 mA; VCC = 3.0 V 2.40 - - V
IO = −4.0 mA; VCC = 3.0 V 2.30 - - V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.11 V
IO = 1.1 mA; VCC = 1.1 V - - 0.33 × VCCV
IO = 1.7 mA; VCC = 1.4 V - - 0.41 V
IO = 1.9 mA; VCC = 1.65 V - - 0.39 V
IO = 2.3 mA; VCC = 2.3 V - - 0.36 V
IO = 3.1 mA; VCC = 2.3 V - - 0.50 V
IO = 2.7 mA; VCC = 3.0 V - - 0.36 V
IO = 4.0 mA; VCC = 3.0 V - - 0.50 V input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.75 μA
IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.75 μA
ΔIOFF additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC =0Vto0.2V ±0.75 μA
ICC supply current VI = GND or VCC; IO = 0A;
VCC= 0.8Vto 3.6V 1.4 μA
ΔICC additional supply current VI = VCC − 0.6 V; IO = 0A;
VCC =3.3V
[1] -- 75 μA
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
11. Dynamic characteristicsTable 8. Dynamic characteristics
Voltages are referenced to GND (ground=0 V); for test circuit see Figure9
Tamb = 25 °C; CL = 5 pF
tpd propagation delay A, B to Y; see Figure8 [2]
VCC = 0.8 V - 17.0 - ns
VCC = 1.1 V to 1.3 V 2.6 5.1 10.8 ns
VCC = 1.4 V to 1.6 V 1.6 3.7 6.5 ns
VCC = 1.65 V to 1.95 V 1.3 3.0 5.2 ns
VCC = 2.3 V to 2.7 V 1.1 2.4 4.0 ns
VCC = 3.0 V to 3.6 V 1.0 2.2 3.5 ns
Tamb = 25 °C; CL = 10 pF
tpd propagation delay A, B to Y; see Figure8 [2]
VCC = 0.8 V - 20.6 - ns
VCC = 1.1 V to 1.3 V 2.4 6.0 12.5 ns
VCC = 1.4 V to 1.6 V 2.0 4.3 7.6 ns
VCC = 1.65 V to 1.95 V 1.7 3.6 6.1 ns
VCC = 2.3 V to 2.7 V 1.4 2.9 4.8 ns
VCC = 3.0 V to 3.6 V 1.3 2.7 4.2 ns
Tamb = 25 °C; CL = 15 pF
tpd propagation delay A, B to Y; see Figure8 [2]
VCC = 0.8 V - 24.1 - ns
VCC = 1.1 V to 1.3 V 3.4 6.8 14.2 ns
VCC = 1.4 V to 1.6 V 2.3 4.9 8.6 ns
VCC = 1.65 V to 1.95 V 1.9 4.0 6.9 ns
VCC = 2.3 V to 2.7 V 1.7 3.4 5.5 ns
VCC = 3.0 V to 3.6 V 1.5 3.1 4.8 ns
Tamb = 25 °C; CL = 30 pF
tpd propagation delay A, B to Y; see Figure8 [2]
VCC = 0.8 V - 34.4 - ns
VCC = 1.1 V to 1.3 V 4.6 9.1 19.4 ns
VCC = 1.4 V to 1.6 V 3.4 6.4 11.5 ns
VCC = 1.65 V to 1.95 V 2.6 5.3 9.1 ns
VCC = 2.3 V to 2.7 V 2.3 4.5 7.2 ns
VCC = 3.0 V to 3.6 V 2.2 4.2 6.2 ns
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
[1] All typical values are measured at nominal VCC.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in μW). =CPD× VCC2×fi×N+ Σ(CL× VCC2× fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in V;= number of inputs switching;
Σ(CL× VCC2×fo)= sum of the outputs.
Tamb = 25 °C
CPD power dissipation capacitance f = 1 MHz; VI= GND to VCC [3]
VCC = 0.8 V - 2.5 - pF
VCC = 1.1 V to 1.3 V - 2.7 - pF
VCC = 1.4 V to 1.6 V - 2.8 - pF
VCC = 1.65 V to 1.95 V - 2.9 - pF
VCC = 2.3 V to 2.7 V - 3.5 - pF
VCC = 3.0 V to 3.6 V - 4.0 - pF
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V); for test circuit see Figure9
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground=0 V); for test circuit see Figure9
CL = 5 pF
tpd propagation delay A, B to Y; see Figure8 [1]
VCC = 1.1 V to 1.3 V 2.1 11.7 2.1 12.9 ns
VCC = 1.4 V to 1.6 V 1.5 7.5 1.5 8.3 ns
VCC = 1.65 V to 1.95 V 1.3 6.1 1.3 6.7 ns
VCC = 2.3 V to 2.7 V 1.0 4.8 1.0 5.3 ns
VCC = 3.0 V to 3.6 V 0.9 4.3 0.9 4.8 ns
CL = 10 pF
tpd propagation delay A, B to Y; see Figure8 [1]
VCC = 1.1 V to 1.3 V 2.2 13.6 2.2 15.0 ns
VCC = 1.4 V to 1.6 V 1.8 8.9 1.8 9.8 ns
VCC = 1.65 V to 1.95 V 1.6 7.2 1.6 7.9 ns
VCC = 2.3 V to 2.7 V 1.3 5.7 1.3 6.3 ns
VCC = 3.0 V to 3.6 V 1.2 4.7 1.2 5.2 ns
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
[1] tpd is the same as tPLH and tPHL.
12. Waveforms
CL = 15 pF
tpd propagation delay A, B to Y; see Figure8 [1]
VCC = 1.1 V to 1.3 V 3.1 15.7 3.1 17.3 ns
VCC = 1.4 V to 1.6 V 2.1 10.1 2.1 11.2 ns
VCC = 1.65 V to 1.95 V 1.8 8.2 1.8 9.0 ns
VCC = 2.3 V to 2.7 V 1.6 6.5 1.6 7.2 ns
VCC = 3.0 V to 3.6 V 1.5 5.9 1.5 6.5 ns
CL = 30 pF
tpd propagation delay A, B to Y; see Figure8 [1]
VCC = 1.1 V to 1.3 V 4.1 21.8 4.1 24.0 ns
VCC = 1.4 V to 1.6 V 2.9 13.6 2.9 15.0 ns
VCC = 1.65 V to 1.95 V 2.4 10.9 2.4 12.1 ns
VCC = 2.3 V to 2.7 V 2.2 8.6 2.2 9.5 ns
VCC = 3.0 V to 3.6 V 2.1 7.5 2.1 8.3 ns
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground=0 V); for test circuit see Figure9
Table 10. Measurement points
0.8 V to 3.6 V 0.5 × VCC 0.5 × VCC VCC ≤ 3.0 ns
NXP Semiconductors 74AUP1G08
Low-power 2-input AND gate
[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
Table 11. Test data
0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ open GND 2 × VCC

Partno	Mfg	Dc	Qty	Available	Descript
74AUP1G08GF	NXP	N/a	200	avai	Low-power 2-input AND gate
74AUP1G08GM	NXP	N/a	10000	avai	Low-power 2-input AND gate
74AUP1G08GW	NXP	N/a	100	avai	Low-power 2-input AND gate