74AHCT2G126DP Fast Delivery |IC PHOENIX CO.,LIMITED

74AHCT2G126DP ,Dual buffer/line driver; 3-stateFeatures■ Symmetrical output impedance■ High noise immunity■ ESD protection:◆ HBM EIA/JESD22-A114-B ..
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74AHCT2G126DP
74AHC2G126; 74AHCT2G126; Dual buffer/line driver; 3-state
General descriptionThe 74AHC2G126; AHCT2G126 is a high-speed Si-gate CMOS device.
The 74AHC2G126; AHCT2G126 provides a dual non-inverting buffer/line driver with
3-state output. The 3-state outputis controlledby the output enable input (OE).A LOWat
pin nOE causes the output to assume a high-impedance OFF-state. Features Symmetrical output impedance High noise immunity ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Multiple package options Speciﬁed from −40 °C to +85 °C and from −40 °C to +125 °C. Quick reference data
74AHC2G126; 74AHCT2G126
Dual buffer/line driver; 3-state
Table 1: Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
Type 74AHC2G126
tPHL, tPLH propagation delaytonY
CL = 15 pF; VCC = 5 V - 3.4 5.5 ns input capacitance - 1.5 10 pF
CPD power dissipation
capacitance
CL = 50 pF; fi = 1 MHz [1][2] -10 - pF
Philips Semiconductors 74AHC2G126; 74AHCT2G126
[1] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2× fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
[2] The condition is VI = GND to VCC. Ordering information
Type 74AHCT2G126
tPHL, tPLH propagation delaytonY
CL = 15 pF; VCC = 5 V - 3.4 5.5 ns input capacitance - 1.5 10 pF
CPD power dissipation
capacitance
CL = 50 pF; fi = 1 MHz [1][2] -10 - pF
Table 1: Quick reference data …continued
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
Table 2: Ordering information
74AHC2G126DP −40 °C to +125°C TSSOP8 plastic thin shrink small outline package;8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHCT2G126DP −40 °C to +125°C TSSOP8 plastic thin shrink small outline package;8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHC2G126DC −40 °C to +125°C VSSOP8 plastic very thin shrink small outline package; leads; body width 2.3 mm
SOT765-1
74AHCT2G126DC −40 °C to +125°C VSSOP8 plastic very thin shrink small outline package; leads; body width 2.3 mm
SOT765-1
74AHC2G126GM −40 °C to +125°C XSON8 plastic extremely thin small outline package; leads;8 terminals; body 0.95× 1.95× 0.5 mm
SOT833-1
74AHCT2G126GM −40 °C to +125°C XSON8 plastic extremely thin small outline package; leads;8 terminals; body 0.95× 1.95× 0.5 mm
SOT833-1
Philips Semiconductors 74AHC2G126; 74AHCT2G126 Marking Functional diagram
Table 3: Marking
74AHC2G126DP A26
74AHCT2G126DP C26
74AHC2G126DC A26
74AHCT2G126DC C26
74AHC2G126GM A26
74AHCT2G126GM C26
Philips Semiconductors 74AHC2G126; 74AHCT2G126 Pinning information
7.1 Pinning
7.2 Pin description
Table 4: Pin description
1OE 1 output enable input (active HIGH) 2 data input 3 data output
GND 4 ground (0 V) 5 data input 6 data output
2OE 7 output enable input (active HIGH)
VCC 8 supply voltage
Philips Semiconductors 74AHC2G126; 74AHCT2G126 Functional description
8.1 Function table
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
10. Recommended operating conditions
Table 5: Function table[1] L
HHH Z
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input diode current VI < −0.5 V - −20 mA
IOK output diode current VO< −0.5VorVO >VCC+ 0.5V [1]- ±20 mA output sourceor sink
current> −0.5 V or VO < VCC + 0.5 V - ±25 mA
ICC, IGND VCC or GND current - ±75 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb = −40 °C to +125°C - 250 mW
Table 7: Recommended operating conditions
Type 74AHC2G126
VCC supply voltage 2.0 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb operating ambient
temperature
see Section 11 and
Section 12 per device
−40 +25 +125 °C
tr, tf input rise and fall
times
VCC = 3.3 V± 0.3 V - - 100 ns/V
VCC = 5.0 V ± 0.5 V - - 20 ns/V
Philips Semiconductors 74AHC2G126; 74AHCT2G126
11. Static characteristics
Type 74AHCT2G126
VCC supply voltage 4.5 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb operating ambient
temperature
see Section 11 and
Section 12 per device
−40 +25 +125 °C
tr, tf input rise and fall
times
VCC = 5.0 V ± 0.5 V - - 20 ns/V
Table 7: Recommended operating conditions …continued
Table 8: Static characteristics type 74AHC2G126
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb = 25°C
VIH HIGH-level input
voltage
VCC = 2.0 V 1.5 - - V
VCC = 3.0 V 2.1 - - V
VCC = 5.5 V 3.85 - - V
VIL LOW-level input
voltage
VCC = 2.0 V - - 0.5 V
VCC = 3.0 V - - 0.9 V
VCC = 5.5 V - - 1.65 V
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 2.0 V 1.9 2.0 - V
IO = −50 μA; VCC = 3.0 V 2.9 3.0 - V
IO = −50 μA; VCC = 4.5 V 4.4 4.5 - V
IO = −4.0 mA; VCC = 3.0 V 2.58 - - V
IO = −8.0 mA; VCC = 4.5 V 3.94 - - V
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 2.0 V - 0 0.1 V
IO = 50 μA; VCC = 3.0 V - 0 0.1 V
IO = 50 μA; VCC = 4.5 V - 0 0.1 V
IO = 4.0 mA; VCC = 3.0 V - - 0.36 V
IO = 8.0 mA; VCC = 4.5 V - - 0.36 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 0.25 μA
ILI input leakage
current
VI = VCC or GND; VCC= 5.5V - - 0.1 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V - 1.0 μA input capacitance - 1.5 10 pF
Philips Semiconductors 74AHC2G126; 74AHCT2G126
Tamb = −40 °C to +85°C
VIH HIGH-level input
voltage
VCC = 2.0 V 1.5 - - V
VCC = 3.0 V 2.1 - - V
VCC = 5.5 V 3.85 - - V
VIL LOW-level input
voltage
VCC = 2.0 V - - 0.5 V
VCC = 3.0 V - - 0.9 V
VCC = 5.5 V - - 1.65 V
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 2.0 V 1.9 - - V
IO = −50 μA; VCC = 3.0 V 2.9 - - V
IO = −50 μA; VCC = 4.5 V 4.4 - - V
IO = −4.0 mA; VCC = 3.0 V 2.48 - - V
IO = −8.0 mA; VCC = 4.5 V 3.8 - - V
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 2.0 V - - 0.1 V
IO = 50 μA; VCC = 3.0 V - - 0.1 V
IO = 50 μA; VCC = 4.5 V - - 0.1 V
IO = 4.0 mA; VCC = 3.0 V - - 0.44 V
IO = 8.0 mA; VCC = 4.5 V - - 0.44 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 2.5 μA
ILI input leakage
current
VI = VCC or GND; VCC= 5.5V - - 1.0 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V
--10 μA input capacitance - - 10 pF
Tamb = −40 °C to +125°C
VIH HIGH-level input
voltage
VCC = 2.0 V 1.5 - - V
VCC = 3.0 V 2.1 - - V
VCC = 5.5 V 3.85 - - V
VIL LOW-level input
voltage
VCC = 2.0 V - - 0.5 V
VCC = 3.0 V - - 0.9 V
VCC = 5.5 V - - 1.65 V
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 2.0 V 1.9 - - V
IO = −50 μA; VCC = 3.0 V 2.9 - - V
IO = −50 μA; VCC = 4.5 V 4.4 - - V
IO = −4.0 mA; VCC = 3.0 V 2.40 - - V
IO = −8.0 mA; VCC = 4.5 V 3.70 - - V
Table 8: Static characteristics type 74AHC2G126 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Philips Semiconductors 74AHC2G126; 74AHCT2G126
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 2.0 V - - 0.1 V
IO = 50 μA; VCC = 3.0 V - - 0.1 V
IO = 50 μA; VCC = 4.5 V - - 0.1 V
IO = 4.0 mA; VCC = 3.0 V - - 0.55 V
IO = 8.0 mA; VCC = 4.5 V - - 0.55 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 10 μA
ILI input leakage
current
VI = VCC or GND; VCC= 5.5V - - 2.0 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V
--40 μA input capacitance - - 10 pF
Table 8: Static characteristics type 74AHC2G126 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Table 9: Static characteristics type 74AHCT2G126
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb = 25°C
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5 V 2.0 - - V
VIL LOW-level input
voltage
VCC = 4.5 V to 5.5 V - - 0.8 V
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 4.5 V 4.4 4.5 4.5 V
IO = −8.0 mA; VCC = 4.5 V 3.94 - - V
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 4.5 V - 0 0.1 V
IO = 8.0 mA; VCC = 4.5 V - - 0.36 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 0.25 μA
ILI input leakage
current
VI = VIH or VIL; VCC = 5.5 V - - 0.1 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V - 1.0 μA
ΔICC additional quiescent
supply current per
input pin
VI = 3.4 V; other inputs at VCC or
GND; IO = 0 A; VCC= 5.5 V - 1.35 mA input capacitance - 1.5 10 pF
Tamb = −40 °C to +85°C
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5 V 2.0 - - V
VIL LOW-level input
voltage
VCC = 4.5 V to 5.5 V - - 0.8 V
Philips Semiconductors 74AHC2G126; 74AHCT2G126
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 4.5 V 4.4 - - V
IO = −8.0 mA; VCC = 4.5 V 3.8 - - V
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 4.5 V - - 0.1 V
IO = 8.0 mA; VCC = 4.5 V - - 0.44 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 2.5 μA
ILI input leakage
current
VI = VIH or VIL; VCC = 5.5 V - - 1.0 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V
--10 μA
ΔICC additional quiescent
supply current per
input pin
VI = 3.4 V; other inputs at VCC or
GND; IO = 0 A; VCC= 5.5 V - 1.5 mA input capacitance - - 10 pF
Tamb = −40 °C to +125°C
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5 V 2.0 - - V
VIL LOW-level input
voltage
VCC = 4.5 V to 5.5 V - - 0.8 V
VOH HIGH-level output
voltage
VI = VIH or VIL
IO = −50 μA; VCC = 4.5 V 4.4 - - V
IO = −8.0 mA; VCC = 4.5 V 3.70 - - V
VOL LOW-level output
voltage
VI = VIH or VIL
IO = 50 μA; VCC = 4.5 V - - 0.1 V
IO = 8.0 mA; VCC = 4.5 V - - 0.55 V
IOZ 3-state OFF-state
current
VI = VCC or GND; VCC= 5.5V - - 10 μA
ILI input leakage
current
VI = VIH or VIL; VCC = 5.5 V - - 2.0 μA
ICC quiescent supply
current
VI = VCC or GND; IO = 0A;
VCC= 5.5V
--40 μA
ΔICC additional quiescent
supply current per
input pin
VI = 3.4 V; other inputs at VCC or
GND; IO = 0 A; VCC= 5.5 V - 1.5 mA input capacitance - - 10 pF
Table 9: Static characteristics type 74AHCT2G126 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Philips Semiconductors 74AHC2G126; 74AHCT2G126
12. Dynamic characteristics
Table 10: Dynamic characteristics type 74AHC2G126
GND = 0 V; tr = tf ≤ 3.0 ns; see Figure8.
Tamb = 25°C
tPHL, tPLH propagation delaytonY
see Figure6
VCC = 3.0 V to 3.6 V; CL =15pF [1]- 4.7 8.0 ns
VCC = 4.5 V to 5.5 V; CL =15pF [2]- 3.4 5.5 ns
VCC = 3.0 V to 3.6 V; CL =50pF [1]- 6.6 11.5 ns
VCC = 4.5 V to 5.5 V; CL =50pF [2]- 4.8 7.5 ns
tPZH, tPZL propagation delay
nOEtonY
see Figure7
VCC = 3.0 V to 3.6 V; CL =15pF [1]- 5.0 8.0 ns
VCC = 4.5 V to 5.5 V; CL =15pF [2]- 3.6 5.1 ns
VCC = 3.0 V to 3.6 V; CL =50pF [1]- 6.9 11.5 ns
VCC = 4.5 V to 5.5 V; CL =50pF [2]- 4.9 7.5 ns
tPHZ, tPLZ propagation delay
nOEtonY
see Figure 7; CL =15pF
VCC = 3.0 V to 3.6 V; CL =15pF [1]- 6.0 9.7 ns
VCC = 4.5 V to 5.5 V; CL =15pF [2]- 4.1 6.8 ns
VCC = 3.0 V to 3.6 V; CL =50pF [1]- 8.3 13.2 ns
VCC = 4.5 V to 5.5 V; CL =50pF [2]- 5.7 8.8 ns
CPD power dissipation
capacitance
CL = 50 pF; fi = 1 MHz [3][4] -10 - pF
Tamb = −40 °C to +85°C
tPHL, tPLH propagation delaytonY
see Figure6
VCC = 3.0 V to 3.6 V; CL=15pF 1.0 - 9.5 ns
VCC = 4.5 V to 5.5 V; CL=15pF 1.0 - 6.5 ns
VCC = 3.0 V to 3.6 V; CL=50pF 1.0 - 13.0 ns
VCC = 4.5 V to 5.5 V; CL=50pF 1.0 - 8.5 ns
tPZH, tPZL propagation delay
nOEtonY
see Figure7
VCC = 3.0 V to 3.6 V; CL=15pF 1.0 - 9.5 ns
VCC = 4.5 V to 5.5 V; CL=15pF 1.0 - 6.0 ns
VCC = 3.0 V to 3.6 V; CL=50pF 1.0 - 13.0 ns
VCC = 4.5 V to 5.5 V; CL=50pF 1.0 - 9.0 ns
tPHZ, tPLZ propagation delay
nOEtonY
see Figure 7; CL =15pF
VCC = 3.0 V to 3.6 V; CL=15pF 1.0 - 11.5 ns
VCC = 4.5 V to 5.5 V; CL=15pF 1.0 - 8.0 ns
VCC = 3.0 V to 3.6 V; CL=50pF 1.0 - 15.0 ns
VCC = 4.5 V to 5.5 V; CL=50pF 1.0 - 10.0 ns

Partno	Mfg	Dc	Qty	Available	Descript
74AHCT2G126DP	PHILIPS	N/a	3000	avai	Dual buffer/line driver; 3-state