74AHCT2G08DP Fast Delivery |IC PHOENIX CO.,LIMITED

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74AHCT2G08DP
Dual 2-input AND gate
General descriptionThe 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device.
The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features Symmetrical output impedance High noise immunity ESD protection: HBM EIA/JESD22-A114-B exceeds 2000V MM EIA/JESD22-A115-A exceeds 200V CDM EIA/JESD22-C101 exceeds 1000V. Low power dissipation Balanced propagation delays Multiple package options Speciﬁed from −40 °Cto+80 °C and from −40°Cto +125 °C. Quick reference data
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
Table 1: Quick reference data
GND=0 V; Tamb =25 °C; tr =tf≤ 3.0ns.
Type 74AHC2G08
tPHL, tPLH propagation delay andBtoY=15 pF; VCC=5V - 3.2 5.9 ns input capacitance - 1.5 10 pF
CPD power dissipation
capacitance=50 pF; fi=1 MHz [1][2] -17 - pF
Philips Semiconductors 74AHC2G08; 74AHCT2G08
[1] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in Volts;= number of inputs switching;
Σ(CL× VCC2×fo)= sum of the outputs.
[2] The condition is Vi= GNDto VCC. Ordering information Marking
Type 74AHCT2G08
tPHL, tPLH propagation delay andBtoY=15 pF; VCC=5V - 3.6 6.2 ns input capacitance - 1.5 10 pF
CPD power dissipation
capacitance=50 pF; fi=1 MHz [1][2] -19 - pF
Table 1: Quick reference data …continued
GND=0 V; Tamb =25 °C; tr =tf≤ 3.0ns.
Table 2: Ordering information
74AHC2G08DP −40 °C to +125°C TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHCT2G08DP −40 °C to +125°C TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHC2G08DC −40 °C to +125°C VSSOP8 plastic very thin shrink small outline package; leads; body width 2.3 mm
SOT765-1
74AHCT2G08DC −40 °C to +125°C VSSOP8 plastic very thin shrink small outline package; leads; body width 2.3 mm
SOT765-1
74AHC2G08GM −40 °C to +125°C XSON8 plastic extremely thin small outline package; leads; 8 terminals; body 0.95 × 1.95 × 0.5 mm
SOT833-1
74AHCT2G08GM −40 °C to +125°C XSON8 plastic extremely thin small outline package; leads; 8 terminals; body 0.95 × 1.95 × 0.5 mm
SOT833-1
Table 3: Marking
74AHC2G08DP A08
74AHCT2G08DP C08
74AHC2G08DC A08
74AHCT2G08DC C08
74AHC2G08GM A08
74AHCT2G08GM C08
Philips Semiconductors 74AHC2G08; 74AHCT2G08 Functional diagram Pinning information
7.1 Pinning
Philips Semiconductors 74AHC2G08; 74AHCT2G08
7.2 Pin description Functional description
8.1 Function table
[1]H= HIGH voltage level;= LOW voltage level. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Table 4: Pin description 1 data input 2 data input 3 data output
GND 4 ground (0 V) 5 data input 6 data input 7 data output
VCC 8 supply voltage
Table 5: Function table[1]
LLL L L
HHH
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input diode current VI< −0.5V - −20 mA
IOK output diode
current< −0.5 V or >VCC+ 0.5V
[1]- ±20 mA output source or
sink current> −0.5 V and ICC, IGND VCCor GND current - ±75 mA
Tstg storage
temperature
−65 +150 °C
Ptot power dissipation Tamb= −40°Cto +125°C - 250 mW
Philips Semiconductors 74AHC2G08; 74AHCT2G08
10. Recommended operating conditions
11. Static characteristics
Table 7: Recommended operating operations
Type 74AHC2G08
VCC supply voltage 2.0 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb ambient
temperature
see Section 11 and
Section12
−40 +25 +125 °C
tr, tf input rise and fall
times
VCC= 3.0Vto 3.6V - - 100 ns/V
VCC= 4.5Vto 5.5V - - 20 ns/V
Type 74AHCT2G08
VCC supply voltage 4.5 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb ambient
temperature
see Section 11 and
Section12
−40 +25 +125 °C
tr, tf input rise and fall
times
VCC= 4.5Vto 5.5V - - 20 ns/V
Table 8: Static characteristics type 74AHC2G08
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb =25°C
VIH HIGH-level input
voltage
VCC = 2.0 V 1.5 - - V
VCC = 3.0 V 2.1 - - V
VCC = 5.5 V 3.85 - - V
VIL LOW-level input
voltage
VCC = 2.0 V - - 0.5 V
VCC = 3.0 V - - 0.9 V
VCC = 5.5 V - - 1.65 V
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC = 2.0 V 1.9 2.0 - V= −50 μA; VCC = 3.0 V 2.9 3.0 - V= −50 μA; VCC = 4.5 V 4.4 4.5 - V= −4.0 mA; VCC = 3.0 V 2.58 - - V= −8.0 mA; VCC = 4.5 V 3.94 - - V
Philips Semiconductors 74AHC2G08; 74AHCT2G08
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC = 2.0 V - 0 0.1 V =50 μA; VCC = 3.0 V - 0 0.1 V =50 μA; VCC = 4.5 V - 0 0.1 V= 4.0 mA; VCC = 3.0 V - - 0.36 V= 8.0 mA; VCC = 4.5 V - - 0.36 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 0.1 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5 V - 1.0 μA input capacitance - 1.5 10 pF
Tamb= −40°Cto +85°C
VIH HIGH-level input
voltage
VCC= 2.0 V 1.5 - - V
VCC= 3.0 V 2.1 - - V
VCC= 5.5 V 3.85 - - V
VIL LOW-level input
voltage
VCC= 2.0 V - - 0.5 V
VCC= 3.0 V - - 0.9 V
VCC= 5.5 V - - 1.65 V
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC = 2.0 V 1.9 - - V= −50 μA; VCC = 3.0 V 2.9 - - V= −50 μA; VCC = 4.5 V 4.4 - - V= −4.0 mA; VCC = 3.0 V 2.48 - - V= −8.0 mA; VCC = 4.5 V 3.8 - - V
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC = 2.0 V - - 0.1 V =50 μA; VCC = 3.0 V - - 0.1 V =50 μA; VCC = 4.5 V - - 0.1 V= 4.0 mA; VCC = 3.0 V - - 0.44 V= 8.0 mA; VCC = 4.5 V - - 0.44 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 1.0 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5V
--10 μA input capacitance - - 10 pF
Tamb= −40°Cto +125°C
VIH HIGH-level input
voltage
VCC= 2.0V 1.5 - - V
VCC= 3.0V 2.1 - - V
VCC= 5.5V 3.85 - - V
VIL LOW-level input
voltage
VCC= 2.0V - - 0.5 V
VCC= 3.0V - - 0.9 V
VCC= 5.5V - - 1.65 V
Table 8: Static characteristics type 74AHC2G08 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Philips Semiconductors 74AHC2G08; 74AHCT2G08
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC= 2.0V 1.9 - - V= −50 μA; VCC= 3.0V 2.9 - - V= −50 μA; VCC= 4.5V 4.4 - - V= −4.0 mA; VCC= 3.0V 2.40 - - V= −8.0 mA; VCC= 4.5V 3.70 - - V
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC= 2.0V - - 0.1 V =50 μA; VCC= 3.0V - - 0.1 V =50 μA; VCC= 4.5V - - 0.1 V= 4.0 mA; VCC= 3.0V - - 0.55 V= 8.0 mA; VCC= 4.5V - - 0.55 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 2.0 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5V
--40 μA input capacitance - - 10 pF
Table 8: Static characteristics type 74AHC2G08 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Table 9: Static characteristics type 74AHCT2G08
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb =25°C
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5V 2.0 - - V
VIL LOW-level input
voltage
VCC = 4.5 V to 5.5V - - 0.8 V
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC = 4.5 V 4.4 4.5 - V= −8.0 mA; VCC = 4.5 V 3.94 - - V
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC = 4.5 V - 0 0.1 V= 8.0 mA; VCC = 4.5 V - - 0.36 V
ILI input leakage current VI =VIHor VIL; VCC= 5.5V - - 0.1 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5 V - 1.0 μA
ΔICC additional quiescent
supply current per
input pin= 3.4 V; other inputs at
VCCor GND; IO= 0 A;
VCC= 5.5V - 1.35 mA input capacitance - 1.5 10 pF
Tamb= −40°Cto +85°C
VIH HIGH-level input
voltage
VCC= 4.5 V to 5.5V 2.0 - - V
VIL LOW-level input
voltage
VCC= 4.5 V to 5.5V - - 0.8 V
Philips Semiconductors 74AHC2G08; 74AHCT2G08
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC = 4.5 V 4.4 - - V= −8.0 mA; VCC = 4.5 V 3.8 - - V
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC = 4.5 V - - 0.1 V= 8.0 mA; VCC = 4.5 V - - 0.44 V
ILI input leakage current VI =VIHor VIL; VCC= 5.5V - - 1.0 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5V
--10 μA
ΔICC additional quiescent
supply current per
input pin= 3.4 V; other inputs at
VCCor GND; IO= 0 A;
VCC= 5.5V - 1.5 mA input capacitance - - 10 pF
Tamb= −40°Cto +125°C
VIH HIGH-level input
voltage
VCC = 4.5 V to 5.5V 2.0 - - V
VIL LOW-level input
voltage
VCC= 4.5 V to 5.5 V - - 0.8 V
VOH HIGH-level output
voltage =VIHorVIL= −50 μA; VCC= 4.5V 4.4 - - V= −8.0 mA; VCC= 4.5V 3.70 - - V
VOL LOW-level output
voltage =VIHorVIL =50 μA; VCC= 4.5V - - 0.1 V= 8.0 mA; VCC= 4.5V - - 0.55 V
ILI input leakage current VI =VIHor VIL; VCC= 5.5V - - 2.0 μA
ICC quiescent supply
current =VCCor GND; IO= 0 A;
VCC= 5.5V
--40 μA
ΔICC additional quiescent
supply current per
input pin= 3.4 V; other inputs at
VCCor GND; IO= 0 A;
VCC= 5.5V - 1.5 mA input capacitance - - 10 pF
Table 9: Static characteristics type 74AHCT2G08 …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Philips Semiconductors 74AHC2G08; 74AHCT2G08
12. Dynamic characteristics
[1] Typical values are measured at VCC = 3.3 V.
[2] Typical values are measured at VCC = 5.0 V.
[3] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in Volts;= number of inputs switching;
Σ(CL× VCC2×fo)= sum of the outputs.
[4] The condition is VI= GNDto VCC.
Table 10: Dynamic characteristics type 74AHC2G08
At recommended operating conditions; voltages are referenced to GND (ground=0 V); tr=tf≤ 3.0 ns; see Figure7.
Tamb = 25°C
tPHL, tPLH propagation delay andnBtonY
see Figure6
VCC= 3.0 V to 3.6 V; CL = 15 pF [1]- 4.6 8.8 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF [2]- 3.2 5.9 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF [1]- 6.5 12.3 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF [2]- 4.6 7.9 ns
CPD power dissipation
capacitance=50 pF; fi=1 MHz [3][4] -17 - pF
Tamb= −40 °C to +85°C
tPHL, tPLH propagation delay andnBtonY
see Figure6
VCC= 3.0 V to 3.6 V; CL = 15 pF 1.0 - 10.5 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF 1.0 - 7.0 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF 1.0 - 14.0 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF 1.0 - 9.0 ns
Tamb= −40 °C to +125°C
tPHL, tPLH propagation delay andnBtonY
see Figure6
VCC= 3.0 V to 3.6 V; CL = 15 pF 1.0 - 12.0 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF 1.0 - 8.0 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF 1.0 - 16.0 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF 1.0 - 10.5 ns

Partno	Mfg	Dc	Qty	Available	Descript
74AHCT2G08DP	PHI	N/a	35000	avai	74AHC2G08; 74AHCT2G08; Dual 2-input AND gate