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74AHC541BQ ,Octal buffer/line driver; 3-state74AHC541; 74AHCT541Octal buffer/line driver; 3-stateRev. 03 — 12 November 2007 Product data sheet1.
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74AHC541BQ
Octal buffer/line driver; 3-state
General descriptionThe 74AHC541; 74AHCT541 is a high-speed Si-gate CMOS device.
The 74AHC541; 74AHCT541 are octal non-inverting buffer/line drivers with 3-state bus
compatible outputs.
The 3-state outputs are controlled by the output enable inputs OE0 and OE1.
A HIGH on OEn causes the outputs to assume a high-impedance OFF-state. Features Balanced propagation delays All inputs have a Schmitt-trigger action Inputs accepts voltages higher than VCC For 74AHC541 only: operates with CMOS input levels For 74AHCT541 only: operates with TTL input levels ESD protection: HBM JESD22-A114E exceeds 2000V MM JESD22-A115-A exceeds 200V CDM JESD22-C101C exceeds 1000V Multiple package options Speciﬁed from −40 °C to +85 °C and from −40 °C to +125°C Ordering information
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
Rev. 03 — 12 November 2007 Product data sheet
Table 1. Ordering information
74AHC541D −40°Cto +125°C SO20 plastic small outline package; 20 leads;
body width 7.5 mm
SOT163-1
74AHCT541D
74AHC541PW −40°Cto +125°C TSSOP20 plastic thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT360-1
74AHCT541PW
74AHC541BQ −40°Cto +125°C DHVQFN20 plastic dual-in-line compatible thermal enhanced
very thin quadﬂat package;no leads;20 terminals;
body 2.5× 4.5× 0.85 mm
SOT764-1
74AHCT541BQ
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state Functional diagram
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state Pinning information
5.1 Pinning
5.2 Pin description
Table 2. Pin description
OE0 1 output enable input (active LOW)
A[0:7] 2, 3, 4, 5, 6, 7, 8, 9 data input
GND 10 ground (0V)
Y[0:7] 18, 17, 16, 15, 14, 13, 12,11 data output
OE1 19 output enable input (active LOW)
VCC 20 supply voltage
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state Functional description
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Ptot derates linearly with 8 mW/K above 70°C.
[3] Ptot derates linearly with 5.5 mW/K above 60°C.
[4] Ptot derates linearly with 4.5 mW/K above 60°C.
Table 3. Functional table[1] L L H H X Z X Z
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5V [1] −20 - mA
IOK output clamping current VO< −0.5 V orVO >VCC+ 0.5V [1]- ±20 mA output current VO = −0.5 V to (VCC+ 0.5V) - ±25 mA
ICC supply current - 75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb = −40 °C to +125°C
SO20 package [2]- 500 mW
TSSOP20 package [3]- 500 mW
DHVQFN20 package [4]- 500 mW
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state Recommended operating conditions Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V output voltage 0 - VCC 0- VCC V
Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C
Δt/ΔV input transition rise
and fall rate
VCC = 3.3 V ± 0.3 V - - 100 - - - ns/V
VCC = 5.0 V ± 0.5 V - - 20 - - 20 ns/V
Table 6. Static characteristics
Voltages are referenced to GND (ground = 0 V).
For type 74AHC541
VIH HIGH-level
input voltage
VCC = 2.0 V 1.5 - - 1.5 - 1.5 - V
VCC = 3.0 V 2.1 - - 2.1 - 2.1 - V
VCC = 5.5 V 3.85 - - 3.85 - 3.85 - V
VIL LOW-level
input voltage
VCC = 2.0 V - - 0.5 - 0.5 - 0.5 V
VCC = 3.0 V - - 0.9 - 0.9 - 0.9 V
VCC = 5.5 V - - 1.65 - 1.65 - 1.65 V
VOH HIGH-level
output voltage = VIH or VIL= −50 μA; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V= −50 μA; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V= −50 μA; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V= −4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V= −8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V
VOL LOW-level
output voltage = VIH or VIL = 50 μA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V = 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V
IOZ OFF-state
output current
VI =VIH or VIL; =VCCor GND;
VCC= 5.5V ±0.25 - ±2.5 - ±10.0 μA input leakage
current =VCCor GND;
VCC=0V to 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5V - 4.0 - 40 - 80 μA
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state input
capacitance 3.0 10 - 10 - 10 pF output
capacitance 4.0 - - - - - pF
For type 74AHCT541
VIH HIGH-level
input voltage
VCC = 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
VOH HIGH-level
output voltage = VIH or VIL; VCC= 4.5 V= −50μA 4.4 4.5 - 4.4 - 4.4 - V= −8.0 mA 3.94 - - 3.8 - 3.70 - V
VOL LOW-level
output voltage = VIH or VIL; VCC= 4.5 V = 50μA - 0 0.1 - 0.1 - 0.1 V = 8.0 mA - - 0.36 - 0.44 - 0.55 V
IOZ OFF-state
output current
per input pin; VI =VIH or VIL;
VCC= 5.5 V; IO= 0 A; =VCCor GND;
other pinsat VCC or GND ±0.25 - ±2.5 - ±10.0 μA input leakage
current =VCCor GND;
VCC=0V to 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5V - 4.0 - 40 - 80 μA
ΔICC additional
supply current
per input pin; =VCC− 2.1 V; IO= 0 A;
other pinsat VCC or GND;
VCC= 4.5Vto 5.5V - 1.35 - 1.5 - 1.5 mA input
capacitance 3 10 - 10 - 10 pF output
capacitance 4.0 - - - - - pF
Table 6. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V. For test circuit see Figure7.
For type 74AHC541
tpd propagation
delayto Yn; see Figure5 [2]
VCC = 3.0 V to 3.6 V=15pF - 5.0 7.0 1.0 8.5 1.0 9.0 ns=50pF - 7.0 10.5 1.0 12.0 1.0 13.5 ns
VCC = 4.5 V to 5.5 V=15pF - 3.5 5.0 1.0 6.0 1.0 6.5 ns=50pF 5.0 7.0 1.0 8.0 1.0 9.0 ns
ten enable time OEnto Yn; see Figure6 [2]
VCC = 3.0 V to 3.6 V=15pF - 5.5 10.5 1.0 11.0 1.0 13.5 ns=50pF - 7.5 14.0 1.0 16.0 1.0 17.5 ns
VCC = 4.5 V to 5.5 V=15pF - 3.5 7.2 1.0 8.5 1.0 9.0 ns=50pF - 5.0 9.2 1.0 10.5 1.0 11.5 ns
tdis disable time OEnto Yn; see Figure6 [2]
VCC = 3.0 V to 3.6 V=15pF - 6.0 11.0 1.0 12.0 1.0 14.0 ns=50pF - 9.5 15.4 1.0 17.5 1.0 19.5 ns
VCC = 4.5 V to 5.5 V=15pF - 4.5 7.5 1.0 8.0 1.0 9.5 ns=50pF - 6.5 8.8 1.0 10.0 1.0 11.0 ns
CPD power
dissipation
capacitance=50 pF; fi = 1 MHz;= GNDto VCC
[3] -10 - - - - - pF
NXP Semiconductors 74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
[1] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0V).
[2] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3] CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi+∑(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts.
For type 74AHCT541
tpd propagation
delayto Yn; see Figure5 [2]
VCC = 4.5 V to 5.5 V=15pF - 3.5 5.5 1.0 6.5 1.0 7.0 ns=50pF - 5.0 8.5 1.0 9.5 1.0 11.0 ns
ten enable time OEnto Yn; see Figure6
VCC = 4.5 V to 5.5 V=15pF - 4.0 7.0 1.0 8.0 1.0 9.0 ns=50pF - 5.5 10.0 1.0 12.0 1.0 12.5 ns
tdis disable time OEnto Yn; see Figure6 [2]
VCC = 4.5 V to 5.5 V=15pF - 5.0 7.0 1.0 8.0 1.0 9.0 ns=50pF - 7.0 10.0 1.0 12.0 1.0 12.5 ns
CPD power
dissipation
capacitance
per buffer; =50pF;f=1 MHz;= GNDto VCC
[3] -12 - - - - - pF
Table 7. Dynamic characteristics …continued
GND = 0 V. For test circuit see Figure7.

Partno	Mfg	Dc	Qty	Available	Descript
74AHC541BQ	NXP	N/a	300	avai	Octal buffer/line driver; 3-state