74AHC3GU04DP Fast Delivery |IC PHOENIX CO.,LIMITED

74AHC3GU04DP ,InverterFeatures■ Symmetrical output impedance■ High noise immunity■ ESD protection:◆ HBM EIA/JESD22-A114-A ..
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74AHC3GU04DP
high-speed Si-gate CMOS device
General descriptionThe 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function. Features Symmetrical output impedance High noise immunity ESD protection: HBM EIA/JESD22-A114-A exceeds 2000V MM EIA/JESD22-A115-A exceeds 200V CDM EIA/JESD22-C101 exceeds 1000V. Low power dissipation Balanced propagation delays SOT505-2 and SOT765-1 package Output capability ±8 mA drive Speciﬁed from −40 °Cto+85 °C and from −40°Cto +125 °C. Quick reference data
[1] CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi× N+ Σ(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance inpF;
VCC= supply voltage in Volts;= total load switching outputs;
Σ(CL× VCC2×fo)= sum of the outputs.
[2] The condition is VI= GNDto VCC.
74AHC3GU04
Inverter
Table 1: Quick reference data
GND=0 V; Tamb =25 °C; tr =tf≤ 3.0 ns.
tPHL, tPLH propagation delay nA to nY VCC =5V; =15pF 2.5 5.5 ns input capacitance - 3.0 10 pF
CPD power dissipation
capacitance
[1]
[2] -4 -pF
Philips Semiconductors 74AHC3GU04 Ordering information Marking Functional diagram
Table 2: Ordering information
74AHC3GU04DP −40 °C to +125°C TSSOP8 plastic thin shrink small outline
package; 8 leads; body width 3 mm;
lead length 0.5 mm
SOT505-2
74AHC3GU04DC −40 °C to +125°C VSSOP8 plastic shrink small outline package;8
leads; body width 2.3 mm
SOT765-1
Table 3: Marking
74AHC3GU04DP AU04
74AHC3GU04DC AU4
Philips Semiconductors 74AHC3GU04 Pinning information
7.1 Pinning
7.2 Pin description Functional description
8.1 Function table
[1]H= HIGH voltage level;= LOW voltage level.
Table 4: Pin description 1A data input 3Y data output 2A data input GND ground (0 V) 2Y data output 3A data input 1Y data output
8VCC supply voltage
Table 5: Function table[1]
Philips Semiconductors 74AHC3GU04 Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
10. Recommended operating conditions
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground=0V).
VCC supply voltage −0.5 +7.0 V supply voltage −0.5 +7.0 V
IIK input diode current VI< −0.5V - −20 mA
IOK output diode current VO< −0.5 V or VO >VCC+ 0.5V [1]- ±20 mA output sourceor sink
current >−0.5 V or VO ICC, IGND VCC or GND current - ±75 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb= −40°Cto +125°C - 250 mW
Table 7: Recommended operating operations
VCC supply voltage 2.0 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb operating ambient
temperature
see Section 11 and
Section12
−40 +25 +125 °C
tr,tr input rise and fall
times
VCC= 3.3V ± 0.3V - - 100 ns/V
VCC =5V ± 0.5V - - 20 ns/V
Philips Semiconductors 74AHC3GU04
11. Static characteristics
Table 8: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Tamb =25°C
VIH HIGH-level input voltage VCC= 2.0V 1.7 - - V
VCC= 3.0V 2.4 - - V
VCC= 5.5V 4.4 - - V
VIL LOW-level input voltage VCC= 2.0V - - 0.3 V
VCC= 3.0V - - 0.6 V
VCC= 5.5V - - 1.1 V
VOH HIGH-level output voltage VI =VIHorVIL
VCC= 2.0 V; IO= −50μA 1.9 2.0 - V
VCC= 3.0 V; IO= −50μA 2.9 3.0 - V
VCC= 4.5 V; IO= −50μA 4.4 4.5 - V
VCC= 3.0 V; IO= −4.0 mA 2.58 - - V
VCC= 4.5 V; IO= −8.0 mA 3.94 - - V
VOL LOW-level output voltage VI =VIHorVIL
VCC= 2.0 V; IO =50μA - 0 0.1 V
VCC= 3.0 V; IO =50μA - 0 0.1 V
VCC= 4.5 V; IO =50μA - 0 0.1 V
VCC= 3.0 V; IO= 4.0 mA - - 0.36 V
VCC= 4.5 V; IO= 8.0 mA - - 0.36 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 0.1 μA
ICC quiescent supply current VI =VCCor GND; IO =0A;
VCC= 5.5V - 1.0 μA input capacitance - 3.0 10 pF
Tamb= −40 °Cto85°C
VIH HIGH-level input voltage VCC= 2.0V 1.7 - - V
VCC= 3.0V 2.4 - - V
VCC= 5.5V 4.4 - - V
VIL LOW-level input voltage VCC= 2.0V - - 0.3 V
VCC= 3.0V - - 0.6 V
VCC= 5.5V - - 1.1 V
VOH HIGH-level output voltage VI =VIHorVIL= −50 μA; VCC= 2.0V 1.9 - - V= −50 μA; VCC= 3.0V 2.9 - - V= −50 μA; VCC= 4.5V 4.4 - - V= −4.0 mA; VCC= 3.0V 2.48 - - V= −8.0 mA; VCC= 4.5V 3.8 - - V
Philips Semiconductors 74AHC3GU04
VOL LOW-level output voltage VI =VIHorVIL =50 μA; VCC= 2.0V - - 0.1 V =50 μA; VCC= 3.0V - - 0.1 V =50 μA; VCC= 4.5V - - 0.1 V= 4.0 mA; VCC= 3.0V - - 0.44 V= 8.0 mA; VCC= 4.5V - - 0.44 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 1.0 μA
ICC quiescent supply current VI =VCCor GND; IO =0A;
VCC= 5.5V
--10 μA input capacitance - - 10 pF
Tamb= −40°Cto +125°C
VIH HIGH-level input voltage VCC= 2.0V 1.7 - - V
VCC= 3.0V 2.4 - - V
VCC= 5.5V 4.4 - - V
VIL LOW-level input voltage VCC= 2.0V - - 0.3 V
VCC= 3.0V - - 0.6 V
VCC= 5.5V - - 1.1 V
VOH HIGH-level output voltage VI =VIHorVIL= −50 μA; VCC= 2.0V 1.9 - - V= −50 μA; VCC= 3.0V 2.9 - - V= −50 μA; VCC= 4.5V 4.4 - - V= −4.0 mA; VCC= 3.0V 2.40 - - V= −8.0 mA; VCC= 4.5V 3.70 - - V
VOL LOW-level output voltage VI =VIHorVIL =50 μA; VCC= 2.0V - - 0.1 V =50 μA; VCC= 3.0V - - 0.1 V =50 μA; VCC= 4.5V - - 0.1 V= 4.0 mA; VCC= 3.0V - - 0.55 V= 8.0 mA; VCC= 4.5V - - 0.55 V
ILI input leakage current VI =VCCor GND; VCC= 5.5V - - 2.0 μA
ICC quiescent supply current VI =VCCor GND; IO =0A;
VCC= 5.5V
--40 μA input capacitance - - 10 pF
Table 8: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Philips Semiconductors 74AHC3GU04
12. Dynamic characteristics
[1] Typical values are measured at VCC=3.3V.
[2] Typical values are measured at VCC=5.0V.
Table 9: Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0 V); tr=tf≤ 3.0 ns. See Figure6.
Tamb =25°C
tPHL, tPLH propagation delay nAtonY see Figure5
VCC= 3.0 V to 3.6 V; CL = 15 pF [1]- 3.0 7.1 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF [1]- 4.3 10.6 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF [2]- 2.5 5.5 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF [2]- 3.5 7.0 ns
Tamb= −40 °C to 85°C
tPHL, tPLH propagation delay nAtonY see Figure5
VCC= 3.0 V to 3.6 V; CL = 15 pF 1.0 - 8.5 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF 1.0 - 12.0 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF 1.0 - 6.0 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF 1.0 - 8.0 ns
Tamb= −40°Cto 125°C
tPHL, tPLH propagation delay nAtonY see Figure5
VCC= 3.0 V to 3.6 V; CL = 15 pF 1.0 - 10.0 ns
VCC= 3.0 V to 3.6 V; CL = 50 pF 1.0 - 13.5 ns
VCC= 4.5 V to 5.5 V; CL = 15 pF 1.0 - 7.0 ns
VCC= 4.5 V to 5.5 V; CL = 50 pF 1.0 - 9.0 ns
Philips Semiconductors 74AHC3GU04
13. AC waveforms
Philips Semiconductors 74AHC3GU04
13.1 Typical transfer characteristics

Partno	Mfg	Dc	Qty	Available	Descript
74AHC3GU04DP	PHILIPS	N/a	3000	avai	Inverter