74AHC1GU04GV ,InverterFeaturesn Symmetrical output impedancen High noise immunityn Low power dissipationn Balanced propag ..
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74AHC1GU04GV-74AHC1GU04GW
Inverter
General descriptionThe 74AHC1GU04 is a high-speed Si-gate CMOS device. It provides an inverting single
stage function.
Features Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays ESD protection: HBM JESD22-A114E: exceeds 2000V MM JESD22-A115-A: exceeds 200 V CDM JESD22-C101C: exceeds 1000V Specified from −40°Cto +125°C
Ordering information Marking
74AHC1GU04
Inverter
Rev. 05 — 10 July 2007 Product data sheet
Table 1. Ordering information74AHC1GU04GW −40 °C to +125°C TSSOP5 plastic thin shrink small outline package; leads; body width 1.25 mm
SOT353-1
74AHC1GU04GV −40 °C to +125°C SC-74A plastic surface-mounted package; 5 leads SOT753
Table 2. Marking codes74AHC1GU04GW AD
74AHC1GU04GV AU4
NXP Semiconductors 74AHC1GU04
Inverter Functional diagram Pinning information
6.1 Pinning
6.2 Pin description Functional description
Table 3. Pin descriptionn.c. 1 not connected 2 data input
GND 3 ground (0 V) 4 data output
VCC 5 supply voltage
Table 4. Function tableH = HIGH voltage level; L = LOW voltage level
NXP Semiconductors 74AHC1GU04
Inverter Limiting values[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
Recommended operating conditions
10. Static characteristics
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage −0.5 +7.0 V
IIK input clamping current VI< −0.5V −20 - mA input voltage [1] −0.5 +7.0 V
IOK output clamping current VO < −0.5 V or VO >VCC + 0.5 V - ±20 mA output current −0.5 V < VO < VCC+ 0.5 V - ±25 mA
ICC supply current - 75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb = −40°Cto +125°C [2]- 250 mW
Table 6. Recommended operating conditionsVoltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 5.5 V input voltage 0 - 5.5 V output voltage 0 - VCC V
Tamb ambient temperature −40 +25 +125 °C
Δt/ΔV input transition rise and fall rate VCC = 3.3 V ± 0.3 V - - 100 ns/V
VCC = 5.0 V ± 0.5 V - - 20 ns/V
Table 7. Static characteristicsVoltages are referenced to GND (ground = 0 V).
VIH HIGH-level
input voltage
VCC= 2.0 V 1.7 - - 1.7 - 1.7 - V
VCC = 3.0 V 2.4 - - 2.4 - 2.4 - V
VCC = 5.5 V 4.4 - - 4.4 - 4.4 - V
VIL LOW-level
input voltage
VCC= 2.0V - - 0.3 - 0.3 - 0.3 V
VCC = 3.0 V - - 0.6 - 0.6 - 0.6 V
VCC = 5.5 V - - 1.1 - 1.1 - 1.1 V
NXP Semiconductors 74AHC1GU04
Inverter
11. Dynamic characteristics[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi+∑(CL× VCC2×fo) where:= input frequency in MHz;
VOH HIGH-level
output voltage = VIH or VIL= −50 μA; VCC= 2.0V 1.9 2.0 - 1.9 - 1.9 - V= −50 μA; VCC= 3.0V 2.9 3.0 - 2.9 - 2.9 - V= −50 μA; VCC= 4.5V 4.4 4.5 - 4.4 - 4.4 - V= −4.0 mA; VCC= 3.0V 2.58 - - 2.48 - 2.40 - V= −8.0 mA; VCC= 4.5V 3.94 - - 3.8 - 3.70 - V
VOL LOW-level
output voltage = VIH or VIL = 50 μA; VCC= 2.0V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 3.0V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 4.5V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 3.0V - - 0.36 - 0.44 - 0.55 V = 8.0 mA; VCC= 4.5V - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply current VI =VCCor GND; IO =0A;
VCC= 5.5V - 1.0 - 10 - 40 μA input
capacitance 1.5 10 - 10 - 10 pF
Table 7. Static characteristics …continuedVoltages are referenced to GND (ground = 0 V).
Table 8. Dynamic characteristicsGND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure6.
tpd propagation
delay
A to Y; see Figure5 [1]
VCC = 3.0 V to 3.6 V [2]= 15 pF - 3.4 7.1 1.0 8.5 1.0 10.0 ns= 50 pF - 4.9 10.6 1.0 12.0 1.0 13.5 ns
VCC = 4.5 V to 5.5 V [3]= 15 pF - 2.6 5.5 1.0 6.0 1.0 7.0 ns= 50 pF - 3.6 7.0 1.0 8.0 1.0 9.0 ns
CPD power
dissipation
capacitance
per buffer;= GNDto VCC
[4] -14- - - - - pF
NXP Semiconductors 74AHC1GU04
Inverter= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts.
12. Waveforms
13. Typical transfer characteristics
NXP Semiconductors 74AHC1GU04
Inverter
14. Application informationSome applications are:
Linear amplifier (see Figure 12)
In crystal oscillator design (see Figure 13)
Remark: All values given are typical unless otherwise specified.
