74AHC1G14GV-74AHC1G14GW-74AHCT1G14GV Fast Delivery |IC PHOENIX CO.,LIMITED

74AHC1G14GV ,Inverting Schmitt triggerLogic diagram7. Pinning information7.1 Pinning74AHC1G1474AHCT1G14n.c. 1 5 VCCA 2GND 3 4 Y001aaf087F ..
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74AHC1G14GV-74AHC1G14GW-74AHCT1G14GV
Inverting Schmitt trigger
General description74AHC1G14 and 74AHCT1G14 are high-speed Si-gate CMOS devices. They provide an
inverting buffer function with Schmitt trigger action. These devices are capable of
transforming slowly changing input signals into sharply deﬁned, jitter-free output signals.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. Features Symmetrical output impedance High noise immunity ESD protection: HBM JESD22-A114E: exceeds 2000V MM JESD22-A115-A: exceeds 200 V CDM JESD22-C101C: exceeds 1000V Low power dissipation Balanced propagation delays SOT353-1 and SOT753 package options Speciﬁed from −40 °C to +125°C Applications Wave and pulse shapers Astable multivibrators Monostable multivibrators Ordering information
74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
Rev. 06 — 18 May 2009 Product data sheet
Table 1. Ordering information
74AHC1G14GW −40 °C to +125°C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74AHCT1G14GW
74AHC1G14GV −40 °C to +125°C SC-74A plastic surface-mounted package; 5 leads SOT753
74AHCT1G14GV
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger Marking Functional diagram Pinning information
7.1 Pinning
7.2 Pin description
Table 2. Marking codes
74AHC1G14GW AF
74AHCT1G14GW CF
74AHC1G14GV A14
74AHCT1G14GV C14
Table 3. Pin description
n.c. 1 not connected 2 data input
GND 3 ground (0V) 4 data output
VCC 5 supply voltage
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger Functional description Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
10. Recommended operating conditions
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5 V −20 - mA
IOK output clamping current VO < −0.5 V or VO >VCC+ 0.5V [1]- ±20 mA output current −0.5 V < VO ICC supply current - 75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb = −40°Cto +125°C [2]- 250 mW
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V output voltage 0 - VCC 0- VCC V
Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
11. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
For type 74AHC1G14
VOH HIGH-level
output voltage = VT+ or VT−= −50 μA; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V= −50 μA; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V= −50 μA; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V= −4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V= −8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V
VOL LOW-level
output voltage = VT+ or VT− = 50 μA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V = 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5 V - 1.0 - 10 - 40 μA input
capacitance 1.5 10 - 10 - 10 pF
For type 74AHCT1G14
VOH HIGH-level
output voltage = VT+ or VT−; VCC= 4.5 V= −50μA 4.4 4.5 - 4.4 - 4.4 - V= −8.0 mA 3.94 - - 3.8 - 3.70 - V
VOL LOW-level
output voltage = VT+ or VT−; VCC= 4.5 V = 50μA - 0 0.1 - 0.1 - 0.1 V = 8.0 mA - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5 V - 1.0 - 10 - 40 μA
ΔICC additional
supply current
per input pin; VI= 3.4V;
other inputs at VCCor GND;= 0 A; VCC = 5.5 V - 1.35 - 1.5 - 1.5 mA input
capacitance 1.5 10 - 10 - 10 pF
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
11.1 Transfer characteristics
Table 8. Transfer characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Figure 7 and Figure8.
For type 74AHC1G14
VT+ positive-going
threshold
voltage
VCC = 3.0 V - - 2.2 - 2.2 - 2.2 V
VCC = 4.5 V - - 3.15 - 3.15 - 3.15 V
VCC = 5.5 V - - 3.85 - 3.85 - 3.85 V
VT− negative-going
threshold
voltage
VCC = 3.0 V 0.9 - - 0.9 - 0.9 - V
VCC = 4.5 V 1.35 - - 1.35 - 1.35 - V
VCC = 5.5 V 1.65 - - 1.65 - 1.65 - V hysteresis
voltage
VCC = 3.0 V 0.3 - 1.2 0.3 1.2 0.25 1.2 V
VCC = 4.5 V 0.4 - 1.4 0.4 1.4 0.35 1.4 V
VCC = 5.5 V 0.5 - 1.6 0.5 1.6 0.45 1.6 V
For type 74AHCT1G14
VT+ positive-going
threshold
voltage
VCC = 4.5 V - - 2.0 - 2.0 - 2.0 V
VCC = 5.5 V - - 2.0 - 2.0 - 2.0 V
VT− negative-going
threshold
voltage
VCC = 4.5 V 0.5 - - 0.5 - 0.5 - V
VCC = 5.5 V 0.6 - - 0.6 - 0.6 - V hysteresis
voltage
VCC = 4.5 V 0.4 - 1.4 0.4 1.4 0.35 1.4 V
VCC = 5.5 V 0.4 - 1.6 0.4 1.6 0.35 1.6 V
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
12. Dynamic characteristics
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi+ ∑(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts.
Table 9. Dynamic characteristics
GND = 0 V; tr = tf ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure6.
For type 74AHC1G14
tpd propagation
delay
A toY; [1]
VCC = 3.0 V to 3.6 V [2]= 15 pF - 4.2 12.8 1.0 15.0 1.0 16.5 ns= 50 pF - 6.0 16.3 1.0 18.5 1.0 20.5 ns
VCC = 4.5 V to 5.5 V [3]= 15 pF - 3.2 8.6 1.0 10.0 1.0 11.0 ns= 50 pF - 4.6 10.6 1.0 12.0 1.0 13.5 ns
CPD power
dissipation
capacitance
per buffer; =50pF;f=1 MHz;= GNDto VCC
[4] -12- - - - - pF
For type 74AHCT1G14
tpd propagation
delay
A toY;
VCC= 4.5Vto 5.5V
[1]
[3]= 15 pF - 4.1 7.0 1.0 8.0 1.0 9.0 ns= 50 pF - 5.9 8.5 1.0 10.0 1.0 11.0 ns
CPD power
dissipation
capacitance
per buffer;= GNDto VCC
[4] -13- - - - - pF
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
13. Waveforms
13.1 Transfer characteristic waveforms
Table 10. Test data
74AHC1G14 GND to VCC 0.5× VCC 0.5× VCC
74AHCT1G14 GND to 3.0 V 1.5 V 0.5× VCC
NXP Semiconductors 74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger

Partno	Mfg	Dc	Qty	Available	Descript
74AHC1G14GV	NXP	N/a	86650	avai	Inverting Schmitt trigger
74AHC1G14GW	NXP/PHILIPS	N/a	5885	avai	Inverting Schmitt trigger
74AHCT1G14GV	NXP	N/a	2507	avai	Inverting Schmitt trigger