74AHC1G08GW-G , 2-input AND gate
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74AHC1G08GW
2-input AND gate
Philips Semiconductors Product specification
2-input AND gate 74AHC1G08; 74AHCT1G08
FEATURES Symmetrical output impedance High noise immunity ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000V EIA/JESD22-A115-A exceeds
200V Low power dissipation Balanced propagation delays Very small 5-pin package Output capability: standard.
DESCRIPTIONThe 74AHC1G/AHCT1G08 is a
high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G08 provides
the 2-input AND function.
FUNCTION TABLESee note1.
Note H= HIGH voltage level.= LOW voltage level.
QUICK REFERENCE DATAGND=0 V; Tamb =25 °C; tr =tf≤ 3.0 ns.
Notes CPD is used to determine the dynamic power dissipation (PDin μW). =CPD× VCC2×fi +(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in V. The condition is VI= GND to VCC.
PINNING
ORDERING AND PACKAGE INFORMATION
Philips Semiconductors Product specification
2-input AND gate 74AHC1G08; 74AHCT1G08
Philips Semiconductors Product specification
2-input AND gate 74AHC1G08; 74AHCT1G08
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0 V).
Notes The input and output voltage ratings may be exceeded if the input and output current ratings are observed. Above +55 °C the value of PD derates linearly with 2.5 mW/K.
Philips Semiconductors Product specification
2-input AND gate 74AHC1G08; 74AHCT1G08
DC CHARACTERISTICS
Family 74AHC1GOver recommended operating conditions; voltage are referenced to GND (ground=0 V).
Philips Semiconductors Product specification
2-input AND gate 74AHC1G08; 74AHCT1G08
Family 74AHCT1GOver recommended operating conditions; voltage are referenced to GND (ground=0 V).
