74AHC1G07GV Fast Delivery |IC PHOENIX CO.,LIMITED

74AHC1G07GV ,74AHC1G07; 74AHCT1G07; Buffer with open-drain outputGeneral description74AHC1G07 and 74AHCT1G07 are high-speed Si-gate CMOS devices. They provide anon- ..
74AHC1G07GW ,Buffer with open-drain outputINTEGRATED CIRCUITSDATA SHEET74AHC1G07; 74AHCT1G07Buffer with open-drain outputProduct speciﬁcation ..
74AHC1G08GV ,74AHC1G08; 74AHCT1G08; 2-input AND gateGeneral description74AHC1G08 and 74AHCT1G08 are high-speed Si-gate CMOS devices. They provide a2-in ..
74AHC1G08GW ,2-input AND gatePin configuration. Fig.2 Logic symbol.handbook, halfpage1handbook, halfpage inB&42outYMNA114inAMNA ..
74AHC1G08GW-G , 2-input AND gate
74AHC1G09GW ,2-input AND gate with open-drain outputFeatures■ High noise immunity■ Low power dissipation■ SOT353-1 and SOT753 package options■ ESD prot ..
74HC32DB ,Quad 2-input OR gateGENERAL DESCRIPTION• Wide supply voltage range from 2.0 to 6.0 V The 74HC/HCT32 is a high-speed Si- ..
74HC32DB ,Quad 2-input OR gateGENERAL DESCRIPTION• Wide supply voltage range from 2.0 to 6.0 V The 74HC/HCT32 is a high-speed Si- ..
74HC32N ,74HC32; 74HCT32; Quad 2-input OR gateINTEGRATED CIRCUITSDATA SHEET74HC32; 74HCT32Quad 2-input OR gateProduct speciﬁcation 2003 Dec 12Sup ..
74HC32PW ,74HC32; 74HCT32; Quad 2-input OR gatePin configuration DIP14, SO14 and (T)SSOP14 Fig 5.
74HC354 ,8-input multiplexer/register with transparent latches; 3-state
74HC356 ,8-input multiplexer/register; 3-state

74AHC1G07GV
Buffer with open-drain output
General description74AHC1G07 and 74AHCT1G07 are high-speed Si-gate CMOS devices. They provide a
non-inverting buffer.
The output of these devices is open-drain and can be connected to other open-drain
outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For
digital operation this device must have a pull-up resistor to establish a logic HIGH-level.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. Features High noise immunity Low power dissipation SOT353-1 and SOT753 package options ESD protection: HBM JESD22-A114E: exceeds 2000V MM JESD22-A115-A: exceeds 200 V CDM JESD22-C101C: exceeds 1000V Speciﬁed from −40°Cto +125°C Ordering information
74AHC1G07; 74AHCT1G07
Buffer with open-drain output
Rev. 06 — 7 June 2007 Product data sheet
Table 1. Ordering information
74AHC1G07GW −40 °C to +125°C TSSOP5 plastic thin shrink small outline package; leads; body width 1.25 mm
SOT353-1
74AHCT1G07GW
74AHC1G07GV −40 °C to +125°C SC-74A plastic surface-mounted package; 5 leads SOT753
74AHCT1G07GV
NXP Semiconductors 74AHC1G07; 74AHCT1G07
Buffer with open-drain output Marking Functional diagram Pinning information
6.1 Pinning
6.2 Pin description
Table 2. Marking codes
74AHC1G07GW AS
74AHC1G07GV A07
74AHCT1G07GW CS
74AHCT1G07GV C07
Table 3. Pin description
n.c. 1 not connected 2 data input
GND 3 ground (0 V) 4 data output
VCC 5 supply voltage
NXP Semiconductors 74AHC1G07; 74AHCT1G07
Buffer with open-drain output Functional description Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. Recommended operating conditions
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V
IIK input clamping current VI < −0.5 V −20 - mA
IOK output clamping current VO < −0.5V [1]- ±20 mA output current VO > −0.5 V - ±25 mA output voltage active mode [1] −0.5 +7.0 V
high-impedance mode [1] −0.5 +7.0 V
ICC supply current - 75 mA
IGND ground current −75 - mA
Tstg storage temperature −65 +150 °C
Ptot total power dissipation Tamb = −40°Cto +125°C [2]- 250 mW
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V output voltage active mode 0 - VCC 0- VCC V
high-impedance mode 0 - 6.0 0 - 6.0 V
Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C
Δt/ΔV input transition rise
and fall rate
VCC = 3.3 V ± 0.3 V - - 100 - - - ns/V
VCC = 5.0 V ± 0.5 V - - 20 - - 20 ns/V
NXP Semiconductors 74AHC1G07; 74AHCT1G07
Buffer with open-drain output
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
For type 74AHC1G07
VIH HIGH-level
input voltage
VCC = 2.0 V 1.5 - - 1.5 - 1.5 - V
VCC = 3.0 V 2.1 - - 2.1 - 2.1 - V
VCC = 5.5 V 3.85 - - 3.85 - 3.85 - V
VIL LOW-level
input voltage
VCC = 2.0 V - - 0.5 - 0.5 - 0.5 V
VCC = 3.0 V - - 0.9 - 0.9 - 0.9 V
VCC = 5.5 V - - 1.65 - 1.65 - 1.65 V
VOL LOW-level
output voltage = VIH or VIL = 50 μA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V = 50 μA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V = 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V = 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
IOZ OFF-state
output current = VIH or VIL; VO = VCC or
GND; VCC= 5.5 V ±0.25 ±2.5 ±10.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5 V - 1.0 - 10 - 20 μA input
capacitance 1.5 10 - 10 - 10 pF
For type 74AHCT1G07
VIH HIGH-level
input voltage
VCC = 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
VOL LOW-level
output voltage = VIH or VIL; VCC= 4.5 V = 50μA - 0 0.1 - 0.1 - 0.1 V = 8.0 mA - - 0.36 - 0.44 - 0.55 V input leakage
current= 5.5Vor GND;
VCC=0Vto 5.5V - 0.1 - 1.0 - 2.0 μA
IOZ OFF-state
output current = VIH or VIL; VO = VCC or
GND; VCC= 5.5 V ±0.25 ±2.5 ±10.0 μA
ICC supply currentVI =VCCor GND; IO = 0 A;
VCC= 5.5 V - 1.0 - 10 - 20 μA
ΔICC additional
supply current
per input pin; VI= 3.4V;
other inputs at VCCor GND;= 0 A; VCC = 5.5 V - 1.35 - 1.5 - 1.5 mA input
capacitance 1.5 10 - 10 - 10 pF
NXP Semiconductors 74AHC1G07; 74AHCT1G07
Buffer with open-drain output
11. Dynamic characteristics
[1] Typical values are measured at VCC = 3.3 V.
[2] Typical values are measured at VCC = 5.0 V.
[3] CPD is used to determine the dynamic power dissipation PD (μW). =CPD× VCC2×fi+∑(CL× VCC2×fo) where:= input frequency in MHz;= output frequency in MHz;= output load capacitance in pF;
VCC= supply voltage in Volts
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure6.
For type 74AHC1G07
tPZL OFF-state LOW
propagation
delay
A to Y; see Figure5
VCC = 3.0 V to 3.6 V [1]= 15 pF - 3.5 5.6 1.0 6.3 1.0 7.0 ns= 50 pF - 5.0 8.0 1.0 9.0 1.0 10.0 ns
VCC = 4.5 V to 5.5 V [2]= 15 pF - 2.5 3.9 1.0 4.6 1.0 4.9 ns= 50 pF - 3.6 5.5 1.0 6.5 1.0 7.0 ns
tPLZ LOW to
OFF-state
propagation
delay
A to Y; see Figure5
VCC = 3.0 V to 3.6 V [1]= 15 pF - 5.8 7.9 1.0 8.4 1.0 8.9 ns= 50 pF - 8.3 11.5 1.0 12.0 1.0 12.5 ns
VCC = 4.5 V to 5.5 V [2]= 15 pF - 4.2 5.1 1.0 5.6 1.0 6.1 ns= 50 pF - 6.0 7.5 1.0 8.0 1.0 8.5 ns
CPD power
dissipation
capacitance
per buffer;=50 pF;f = 1 MHz;= GNDto VCC
[3] -5- - - - - pF
For type 74AHCT1G07
tPZL OFF-state LOW
propagation
delay
A to Y; see Figure5
VCC = 4.5 V to 5.5 V [2]= 15 pF - 2.8 4.6 1.0 5.3 1.0 5.6 ns= 50 pF - 4.0 6.5 1.0 7.5 1.0 8.0 ns
tPLZ LOW to
OFF-state
propagation
delay
A to Y; see Figure5
VCC = 4.5 V to 5.5 V [2]= 15 pF - 3.9 5.6 1.0 6.1 1.0 6.6 ns= 50 pF - 5.5 8.0 1.0 8.5 1.0 9.0 ns
CPD power
dissipation
capacitance
per buffer;=50 pF;f = 1 MHz;= GNDto VCC
[3] - 6.5 - - - - - pF
NXP Semiconductors 74AHC1G07; 74AHCT1G07
Buffer with open-drain output
12. Waveforms
Table 9. Measurement point
74AHC1G07 GND to VCC 0.5 × VCC 0.5 × VCC
74AHCT1G07 GND to 3.0 V 1.5 V 0.5 × VCC

Partno	Mfg	Dc	Qty	Available	Descript
74AHC1G07GV	NXP	N/a	31200	avai	74AHC1G07; 74AHCT1G07; Buffer with open-drain output