CY54FCT543TDMB ,Octal Registered Transceivers with 3-State Outputsmaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage ra ..
CY6116A ,2K x 8 Static RAM
CY6116A/55DMB ,2K x 8 Static RAM
CY6116A-25DMB ,2K x 8 Static RAM
CY6116A-35PC ,2K x 8 Static RAM
CY62126BVLL-55ZI ,Memory : MicroPower SRAMsFunctional Description The input/output pins (I/O through I/O ) are placed in a1 16high-impedance s ..
D1140 , NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
D11NM60N , N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET
D120505ND-1W , TWIN OUTPUT DC-DC CONVERTER
D120505NS-1W , TWIN OUTPUT DC-DC CONVERTER
D120505T-1W , 1W, FIXED INPUT, ISOLATED & UNREGULATED TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE DC-DC CONVERTER
D120505T-2W , TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE
5962-9222101M3A-CY54FCT543TDMB
Octal Registered Transceivers with 3-State Outputs
Significantly Improved Noise
Characteristics Ioff Supports Partial-Power-Down Mode
Operation Matched Rise and Fall Times Fully Compatible With TTL Input and
Output Logic Levels 3-State Outputs ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101) Separation Controls for Data Flow in Each
Direction Back-to-Back Latches for Storage CY54FCT543T
– 48-mA Output Sink Current
– 12-mA Output Source Current CY74FCT543T
– 64-mA Output Sink Current
– 32-mA Output Source Current
descriptionThe ’FCT543T octal latched transceivers contain two sets of eight D-type latches with separate latch-enable
(LEAB, LEBA) and output-enable (OEAB, OEBA) inputs for each set to permit independent control of input and
output in either direction of data flow. For data flow from A to B, for example, the A-to-B enable (CEAB) input
must be low in order to enter data from A or to take data from B, as indicated in the function table. With CEAB
low, a low signal on the A-to-B latch-enable (LEAB) input makes the A-to-B latches transparent; a subsequent
low-to-high transition of the LEAB signal puts the A latches in the storage mode and their outputs no longer
change with the A inputs. With CEAB and OEAB low, the 3-state B-output buffers are active and reflect the data
present at the output of the A latches. Control of data from B to A is similar, but uses CEBA, LEBA, and OEBA
inputs.
These devices are fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current backflow through the device when it is powered down.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.14
GND14
LEAB
OEAB
