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50WQ10FN-50WQ10FNTR-50WQ10FNTRL
100V 5.5A Schottky Discrete Diode in a D-Pak package
(nternatio
TGiR Rectifier
Bulletin PD-20526 rev.E 03/03
50WQ10FN
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
5.5 Amp
D-Pak (TO-252AA)
Description/ Features
Characteristics 50WQ10FN Units The 50WQ10FN surface mount Schottky rectifier has been
designed for applications requiring low fon/vard drop and
|F(AV) Rectangular 5.5 A small foot prints on PC board. Typical applications are in disk
waveform drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
VRRM 100 V . Popular D-PAK outline
IFSM @tp=5ps sine 330 A Small foot print, surface moutable
. Low forward voltage drop
VF @5Apk, To = 125°C 0.63 V . High freguency operation
. Guard rlng for enhanced ruggedness and long term
reliability
T: range -40 to 150 "C
A38 (0.09) -
6.73 J26
( ) 2.19(0.08) - L004) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.39 (0.03)
- 5.46 (021) 1.27 (0.05) 0.58 (0.02) 5.97 (0.24)
l 5,21 (O,20) {0.88 (0.03) _ 0.46 (0.02)
I 6.45 (0.24)
6.22 (0.24) 5.68 (0.22) 6.48 (0.25)
1,64 0,02) 5.97 (0.23) 10.42 (0.41) 10,6T(0A2)
9.4c (0.37) 2 l
l 1 2 3 _
j i 0.51 (0.02) 2x E
1.52 (s6)3-F- . ') ) - MIN, 2.54 (0.10) [D l ,
1.15 (0.04) 1 i T 3 2.26 (0.09)
- 3x 039 (0.03) 1 65 0 06 _-L'""''-'''''"''''
2x1-14-(0-04), 0.64 (0.02) - 0.58 (0.02) _ ( . ) 2x
0.76 (0.03) 0.46 (0.02) 2x
1 - Anode Base
228 (0.09 2 - Cathode Cathode
2x 3 - Anode 4, 2
4.57 (0.18) 4 - Cathode
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches) 1 3
Anode Anode
1
50WQ10FN International
Bulletin PD-20526 rev.E 03/03 TOR Rectifier
Voltage Ratings
Part number 50WQ10FN
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Absolute Maximum Ratings
Parameters 50WQ... Units Conditions
IFW) Max. Average Forward Current 5.5 A 50% duty cycle © TC = 135°C, rectangularwave form
* See Fig. 5
IFSM Max. PeakOneCycle Non-Repetitive 330 5ps Sine or 3ps Rect. pulse Following ..a.ny rated .
. A . load condition and with
Surge Current * See Fig. 7 110 10ms Sine or6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 6.0 mJ To = 25 "C, IAS = 0.5Amps, L = 40 mH
|AR Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 psec
Frequency limited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 50WQ... Units Conditions
V M ' F d Volta e Dro 0.77 V 5A
FM ax orwar g p @ T, = 25 "C
* See Fig. 1 (1) 0.91 V @ 10A
0.63 V @ 5A T, =125 ''C
0.74 V @ 10A
Ira, Max. Reverse Leakage Current 1 mA Tu = 25 ''C
. VR = rated VR
*See Fig.2 (1) 4 mA Tv-- 125°C
VHTO) Threshold Voltage 0.47 V T J = T J max.
rt Forward Slope Resistance 21.46 mn
c, Typical Junction Capacitance 183 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LS Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 50WQ... Units Conditions
T Max.JunctionTemperatureRange(*) -401o150 I
Tstg Max.StorageTemperatureRange -40to150 "C
Reuc Max.ThennalResistanceJunction 3.0 °C/W DCoperation *SeeFig.4
to Case
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similarto TO-252AA
(*)dPtot < 1
. . hermal runaway condition for a diode on its own heatsink
dT) R1h(]-a)
2
