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50WQ06FN-50WQ06FNTR-50WQ06FNTRL-50WQ06FNTRR
60V 5.5A Schottky Discrete Diode in a D-Pak package
International
15212 Rectifier
SCHOTTKYRECTlFlER
Major Ratings and Characteristics
Bulletin PD-20525
rev. E 03/03
50WQ06FN
5.5Amp
D-Pak (TO-252AA)
Description! Features
Characteristics 60WQ06FN Units The. 50WQ06FN syrface mount. _Schottky rectifier has been
designed for applications requmng low forward drop and
I Rectangular 5.5 A small foot 'yi.n.ts on PC board. Typical applications are In lisk
F(AV) drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 60 V . Popular D-PAK outline
. . Small foot print, surface moutable
IFSM @tp=5ps sme 320 A . Low forward voltage drop
o . High frequency operation
VF @5Apk,To= 125 C 0.54 V . Guard ring for enhanced ruggedness and long term
reliability
TJ range -40 to 150 ''C
236 (0.09) -
6.73 J26
( ) 2.19(0.08) - 1_14(0.04) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.89 (0.03)
- 5-45 (021) 1.27 (0.05) _ 0.58(0.02) 5.97 (0.24)
l 5,21 (0,20) {0.65 (0.03) 0.46(0.02)
6.45 (0.24)
6.22 (0.24) 5.68 (0.22) 6.48 (0.26)
1.64 0.02) 5 97 (0 23) 10 42 (0 41) IO 67
. _ _ . . (0.42)
9.4c (0.37) _ I
I . 1 2
i 0.51 (0.02) 2
1.52 (0.06)}_'_ L34 - I MIN. 2.54 ((0.10) E '3 LO -
1.15 (0.04) 1 , T 2.26 (0.09)
2x 1.14 (0-04), 47 3x%; " ‘_0.58(0,02) 1.65 (0.06) - 2x
0.76 (0.03) . . 0.46 (0.02) 2x Base
1 - Anode
2.28 (0.09 2 - Cathode Cathode
2x 3 - Anode 4, 2
4.57 (0.13) 4 - Cathode E
Conform to JEDEC outline D-Pak (Similar to TO-252AA) O 1 i
Dimensions in millimeters and (inches) Anode Am:
50WQ06FN
Bulletin PD-20525 rev.E 03103
Voltage Ratings
International
IEER Rectifier
Part number 50WQ06FN
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 50WQ... Units Conditions
IHAV) Max. Average Forward Current 5.5 A 50% duty cycle @ TC = 132°C, rectangularwave form
* See Fig. 5
IFSM Max. PeakOneCydeNon-Repetitive 320 5ps Sine or 3ps Rect. pulse Following Any rated .
. A __.-.-. load conditioh and with
Surge Current * See Fig. 7 105 10ms Sine or ems Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 7 m] T, = 25°C, IAS; = 1.2 Amps, L= 10mH
I AR Repetitive Avalanche Current 0.8 A Currentdecaying linearlyto zero in 1 psec
Frequency limited by T, max. VA-- 1.5 xv,, typical
Electrical Specifications
Parameters 50WQ... Units Conditions
VFM Max. Forward Voltage Drop 0.57 V @ 5A T - 25 "C
* See Fig. 1 (1) 0.74 V @ 10A J
0.54 V @ 5A T: =125 "C
0.68 V @ 10A
IR,, Max. Reverse Leakage Current 3 mA T J = 25 "C
. v,, = rated VR
*See Fig.2 (1) 35 mA To-- 125''C
Vmo) Threshold Voltage 0.35 V T J = T J max.
rt Forward Slope Resistance 25.5 mil
c, Typical Junction Capacitance 360 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 ''C
Ls Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated I/e)
(1) Pulse l/With < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 50WQ... Units Conditions
T J Max.JunctjonTemperamre Range(*) -40 to150 °C
Tsig Max. Storage Temperature Range -40to 150 "C
Rtruc Max.ThennalResistanceJunction 3.0 °C/W DC operation *See Fig.4
to Case
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D- PAK Similarto TO-252AA
C) dP_tot < 1 th rm I r n w nditi nf r di d nit wn heatsink
dT] Rth(j-a) e a U a ayco 0 O a O eo SO
