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50WQ04FN
40V 5.5A Schottky Discrete Diode in a D-Pak package
International
CBR Rectifier
SCHOTTKYRECTIFlER
Major Ratings and Characteristics
Bulletin PD-20524 rev.E 03/03
50WQ04FN
5.5Amp
D-Pak (TO-252AA)
Description! Features
Characteristics 50WQ04FN U nits The. 50WQ04FN lurfye mount. Schottky rectifier has been
designed for applications requmng low forward drop and
I R I A small foot prints on PC board. Typical applications are in disk
F(AV) ectangu ar 5.5 drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 40 V . Popular D-PAK outline
. Small foot print, surface moutable
IFSM @tp= 5 pssine 340 A I Low forward voltage drop
. High frequency operation
VF @5Apk, T): 125 C 0.44 V . Guard ring for enhanced ruggedness and long term
reliability
TJ range -40 to 150 ''C
2.38 (0.09)
6.73 0.26
( ) 2.19 (O. 08) ‘_1-1M0-04) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.39 (0.03)
I 5.46 (0.21) 1.27 (0.05) -0--58 (0.02) 5.97 (0.24)
I 5.21 (0.20) {Q88 (003) 0.46 (0.02)
gg=% ,
6.45 (0.24)
e J02) 6.22 (0.24) 5.68 (0.22) 6.48 (0.26)
5.97 (0.23) 10. 42 (O. 41) 10.67 (0.42)
""r)r,, 9.40 (0. 37) A
- 0.51 (0.02)
I,.:,-,::)),'-;')-)-,-"-'.::) - = MIN. 2.254(010)[|J:| " -
1.15 (O, 04) T f 2.28 (0.09)
am) -0-58 002 165 005 2
x1..14(004) - 064(002) ' (.) . (.) x
x0. 76 (0. 03) _ . 0.46 (0.02) 2x
1 - Anode Base
2.28 (0,09 2 _ Cathode Cathode
2x 3 - Anode 4, 2
4.57 (0.10) 4 - Cathode l
Conform to JEDEC outline D-Pak (Similar to T0-252AA) i
Dimensions in millimeters and (inches) Anod; Anod:
50WQ04FN
Bulletin PD-20524 rev.E 03103
International
IEER Rectifier
Voltage Ratings
Part number 50WQO4FN
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 0
Absolute Maximum Ratings
Parameters 50WQ... Units Conditions
IHAV) Max. Average Forward Current 5.5 A 50% duty cycle @ TC = 135°C, rectangularwave form
* See Fig. 5
|FSM Max. PeakOneCycleNon-Repetitive 340 5ps Sine or Bus Rect. pulse Following .lny rated .
. A —. load condition and with
Surge Current * See Fig. 7 70 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 9 mJ To-- 25°C, |AS=1.5Amps, L=8mH
I AR Repetitive Avalanche Current 1.2 A Currentdecaying Iinearlyto zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 50WQ... Units Conditions
VFM Max. Forward Voltage Drop 0.51 V @ 5A T, = 25 ''C
* See Fig. 1 (1) 0.63 V @ 10A
0.44 V @ 5A T, =125 "C
0.59 v @ 10A
Ins, Max. Reverse Leakage Current 3 mA T J = 25 "C
. v,, = rated v,,
*See Fig.2 (1) 40 mA To-- 125°C
VFW) Threshold Voltage 0.27 V T J = T J max.
rt Forward Slope Resistance 26.77 mQ
c, Typical Junction Capacitance 405 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 ''C
LS Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 50WQ... Units Conditions
T J Max.JunctionTemperature Range(*) Moto 150 ''C
Tst9 Max. Storage Temperature Range MO to 150 ''C
Rch Max.ThennalResistanceJunction 3.0 "C/W DC operation *See Fig.4
to Case
wt Approximate Weight 0.3(0.01) g (02.)
Case Style D- PAK Similarto TO-252AA
(*) dPtot 1
< -thermal runaway condition fora diode on its own heatsink
dT] Rth(j-a)
