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50WQ03FNIRN/a2740avai30V 5.5A Schottky Discrete Diode in a D-Pak package
50WQ03FNTRIRN/a1269avai30V 5.5A Schottky Discrete Diode in a D-Pak package


50WQ03FN ,30V 5.5A Schottky Discrete Diode in a D-Pak packageBulletin PD-20551 rev. E 03/0350WQ03FNSCHOTTKY RECTIFIER 5.5 AmpD-Pak (TO-252AA)Major Ratings ..
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63CPQ100PBF , Schottky Rectifier, 2 x 30 A


50WQ03FN-50WQ03FNTR
30V 5.5A Schottky Discrete Diode in a D-Pak package
International
CER Rectifier
Bulletin PD-20551 rev.E 03/03
50WQ03FN
SCHOTTKYRECTFIER
Major Ratings and Characteristics
5.5Amp
D-Pak (TO-252AA)
Description! Features
The 50WQO3FN surface mount Schottky rectifier has been
1. 52 (0. ssl-_-ir-i-i-ii,)
1.15(0. M)
1..14(004) -
0.76( (0.03)
2.28 (0.09
6.22 (0.24)
5.97 (0.23)
3x 0.89 (0.03)
0.64 (0.02)
4.57 (0.13)
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches) C) 1
6.4: (0.24)
5.68 (0.22) 6.48 (0.26)
10.67 (0.42)
- 0.51 (0.02) V
= MIN. 2.542(o.10)[|j:| m -
Characteristics 50WQO3FN designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
IF(AV) Rectangular 5.5 drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 30 I Popular D-PAK outline
. Small foot print, surface moutable
'FSM @tp=5pssine 320 . Low fon/vard voltage drop
. High frequency operation
VF @5Apk,To=125oC 0.35 . Guard ring for enhanced ruggedness and long term
reliability
TJ range -40 to 150
673 (026) - 1.14 (0.04)
6.35 (0.25) km) MINIMUM RECOMMENDED FOOTPRINT
I 5.46 (0.21) 1.27 (0.05) 0.58 (0.02) 5.97 (0.24)
l 5.21 (0.20) [0.88 (0.03) -0.-46 (0.02)
( 2.23 (0.09)
0.58 (0.02) 1.65 (0.06) 2x
046 (0.02) 2x Base
Cathode
Anode Anode

50WQ03FN
Bulletin PD-20551 rev.E 03103
International
IEER Rectifier
Voltage Ratings
Part number 50WQ03FN
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Absolute Maximum Ratings
Parameters 50WQ... Units Conditions
IHAV) Max. Average Forward Current 5.5 A 50% duty cycle @ TC = 136°C, rectangularwave form
* See Fig. 5
G, Max.PeakOneCycleNon-Repetitive 320 5ps Sine or 3ps Rect. pulse Following any rated
. A + load condition and with
Surge Current * See Fig. 7 130 10ms Sine or 6ms Rect. pulse rated vRRM applied
EAS Non-Repetitive Avalanche Energy 10 ml TJ = 25 ''C, IAS = 2.0Amps, L= 5 mH
IAR Repetitive Avalanche Current 2.0 A Currentdecaying linearlyto zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 50WQ... Units Conditions
Vo, Max. Forward Voltage Drop 0.46 V @ 5A T _ 25 "C
*See Fig.1 (1) 0.53 v @ 10A J
0.35 V @ 5A T, =125 "C
0.46 V @ 10A
IRS, Max. Reverse Leakage Current 3 mA T J = 25 "C
v,, = rated VR
*See Fig.2 (1) 58 mA To-- 125''C
W, Threshold Voltage 0.19 V TJ = T: max.
rt Forward Slope Resistance 22.22 mil
c, Typical Junction Capacitance 590 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 "C
Ls Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
(1) Pulse l/With < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 50W... Units Conditions
T J Max.JunctionTemperature Range(*) -40to 150 "C
stg Max. Storage Temperature Range MO to 150 "C
Rch Max.ThermalResistanceJunction 3.0 °C/W DC operation *See Fig.4
to Case
wt Approximate Weight 0.3(0.01) g (oz.)
Case Style D - PAK Similarto TO-252AA
( ) 'r-lt < _.1, thermal runaway condition foradiode on its own heatsink
dT] Rth(j-a)

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