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50RIA120VISHAYN/a97avai1200V 50A Phase Control SCR in a TO-208AC (TO-65) package
50RIA60IRN/a100avai600V 50A Phase Control SCR in a TO-208AC (TO-65) package


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50RIA120-50RIA60
200V 50A Phase Control SCR in a TO-208AC (TO-65) package
International
ISBR Rectifier
Bulletin 12401 rev.A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS
Features
EI High currentrating
EI Excellent dynamic characteristics
ty dv/dt=1000Wps option
ty Superiorsurge capabilities
ty Standard package
U Metricthreads version available
EI Types up to 1600V VDRM/ VRRM
Typical Applications
ty Phase control applications in converters
ty Lighting circuits
El Battery charges
D Regulated power supplies and temperature and
speed control circuit
ty Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Stud Version
P t 50RIA U it
arame ers 10 to 120 140 to 160 nl S
ITW) 50 50 A
@ TC 94 90 °c
IHRMS) 80 80
ITSM © 50Hz 1430 1200
@ 60Hz 1490 1257
Pt @ 50Hz 10.18 7.21 KA2s
@ 60Hz 9.30 6.58 KA2s
vDRM/vRRM 100 to 1200 1400 to 1600 v
tq typical 110 ps
T, - 40 to 125 "C
Case Style
TO-208AC (TO-65)

50RIA Series
International
Bulletin 12401 rev. A 07/00 IEBR Rectifier
EETRIA SPEIIATIOS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM, maximum non- IDRMIIRRM max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T J = T J max.
V V mA
10 100 150
20 200 300
40 400 500
60 600 700
50RIA 80 800 900 15
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dl/dt does not exceed 20Alps
(2) For voltage pulses with ti, f 5ms
On-state Conduction
50RIA . . .
Parameter 10to120 140to160 Units Conditions
ITW) Max. average on-state current 50 50 A 180° sinusoidal conduction
@ Case temperature 94 90 T
IHRMS) Max. RMS on-state current 80 80 A
ITSM Max, peak, onestyde 1430 1200 A t= 10ms No voltage
non-repetitive surge current 1490 1257 t= 8.3ms reapplied
1200 1010 t= 10ms 100% VRRM
1255 1057 t = 8.3ms reapplied Sinusoidal half wave,
fl Maximum Pt for fusing 10.18 7.21 KA2s t = 10ms No voltage Initial T J = T J max.
9.30 6.58 t= 8.3ms reapplied
7.20 5.10 t = 10ms 100% VRRM
6.56 4.65 t = 8.3ms reapplied
IZVt Maximum Izvt for fusing 101.8 72.1 KA2/s t= 0.1 to 10ms, no voltage reapplied, T J = T J max.
Vmon Low level value of threshold 0.94 1.02 V (16.7% x n x |T(AV) < I < It x Ivw)), T J = T J max.
voltage
Vmom High level value of threshold 1.08 1.17 (n x ITW) < I < 20 x IT x Imm)’ T J = T J max.
voltage
rt1 Low level value of on-state 4.08 4.78 mn (16.7% x It x ITW) < I < It x |T(AV))' T J = T J max.
slope resistance
r12 High level value of on-state 3.34 3.97 (n x ITW) < I < 20 x IT x IWM), T J = T J max.
slope resistance
VTM Max. on-state voltage 1.60 1.78 V ka= 157 A, T J = 25''C
Ir, Maximum holding current 200 mA T J = 25°C. Anode supply 22V, resistive load,
Initial IT = 2A
IL Latching current 400 Anode supply 6V, resistive load

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