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50MT060WH
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package
International
:lriallit, Rectifier
127120 rev.D 02/03
50MT060WH
"HALF-BRIDGE" IGBT MTP
Featu res
Warp Speed IGBT
. Gen. 4 Warp Speed IGBT Technology
. HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
Very Low Conduction and Switching Losses
Optional SMT Thermistor(NTC)
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
. UL E78996 approved
VCES = 600V
VCE(on)typ. = 2.3V @
VGE = 15V, IC = 50A
To = 25°C
Benefits
. Optimized for Welding, UPS and SMPS
Applications
. Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Absolute Maximum Ratings
Parameters Max Units
chs Collector-to-Emir Voltage 600 V
Ic Continuos Collector Current @ TC = 25''C 114 A
@ Tc = 109°C 50
ICM Pulsed Collector Current 350
ILM Peak Switching Current 350
I F Diode Continuous Forward Current @ To = 109''C 34
IFM Peak Diode Forward Current 200
VGE Gate-to-Emitter Voltage , 20 V
Nhsor, RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PD Maximum Power Dissipation @ TC = 25°C 658 W
@ TC = 100°C 263
5OMT060WH
127120 rev. D 02/03
International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, lc = 500pA
Vcaon) Collector-to-Emitter Voltage 2.3 3.15 VGE = 15V, Ic = 50A
2.5 3.2 VGE =15V,Ic = 100A
1.72 2.17 VGE =15V,Ic = 50A, T: = 150°C
VGEW Gate Threshold Voltage 3 6 Ic = 0.5mA
ICES Collector-to-Emiter Leaking 0.4 mA VGE = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = 600V, To = 150''C
VFM Diode Forward Voltage Drop 1.58 1.80 V IF = 50A, VGE = 0V
1.49 1.68 IF = 50A, VGE = 0V, To = 150°C
1.9 2.17 IF = 100A, VGE = 0V, To = 25''C
IGEs Gate-to-Emitter Leakage Current i 250 nA VGE = 1 20V
Switching Characteristics © Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
09 Total Gate Charge (tum-on) 331 385 nC lc = 52A
Qge Gate-Emitter Charge (turn-on) 44 52 Vcc = 400V
Qgc Gate-Collector Charge (tum-on) 133 176 VGE = 15V
Eon Tum-On Switching Loss 0.26 mJ Internal gate resistors (see Electrical Diagram)
Eoff Turn-Off Switching Loss 1.2 Ic = 50A, Vcc = 480V, VGE = 15V, L = 200PH
Ets Total Switching Loss 1.46 Energy losses include tail and diode reverse
recovery
Eon Tum-On Switching Loss 0.73 mJ Internal gate resistors (see Electrical diagram)
Eoff Tum-Off Switching Loss 1.66 IC = 50A, Vcc = 480V, VGE = 15V, L = 200pH
Ets Total Switching Loss 2.39 Energy losses include tail and diode reverse
recovery, T J = 150°C
Cies Input Capacitance 7100 pF VGE = 0V
Coes Output Capacitance 510 Vcc = 30V
Cres Reverse Transfer Capacitance 140 f= 1.0 MHz
trr Diode Reverse Recovery Time 82 97 ns Vcc = 200V, k: = 50A
Irr Diode Peak Reverse Current 8.3 10.6 A di/dt = 200/Ups
er Diode Recovery Charge 340 514 nC
trr Diode Reverse Recovery Time 137 153 ns Vcc = 200V, k: = 50A
Irr Diode Peak Reverse Current 12.7 14.8 A di/dt = 200A/ps
er Diode Recovery Charge 870 1132 nC T J = 125°C
Thermistor Specifications
Parameters Min Typ Max Units Test Conditions
Ro (1) Resistance 30 k9 To = 25°C
fl (1) (2) Sensitivity index of the thermistor 4000 K To = 25°C
material T1 = 85°C
(1) T0,T1 are thermistor‘s temperatures
(2) rr2-i,'--exphs(
