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50MT060ULST
LOW SIDE CHOPPER IGBT MTP
I27123 rev. C02/03
International
IezR Rectifier 50MTO6OULS
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT
Features
. Gen. 4 Ultrafast Speed IGBT Technology
. HEXFRED TM Diode with UltraSoft VCES = 600V
Reverse Recovery
. Very Low Conduction and Switching lc = 100A,
Losses H
. Optional SMT Thermistor(NTC) TC = 25°C
. Aluminum Nitride DBC
. Very Low Stray Inductance Design for
High Speed Operation
. UL approved (Ne E78996)
Benefits
. Optimized for Welding, UPS and SMPS
Applications
. Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Absolute Maximum Ratings
Parameters Max Units
VCES Collector-to-EmitterVoltage 600 V
Ic Continuos Collector Current @ Tc = 25°C 100 A
@ To = 122°C 50
ICM Pulsed Collector Current 200
ILM Peak Switching Current 200
I F Diode Continuous Forward Current @ TC = 100°C 48
IFM Peak Diode Forward Current 200
VGE Gate-to-emitter Voltage * 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Pro Maximum Power IGBT @ TC = 25°C 445 W
Dissipation © Tc = 100°C 175
Diode @ TC = 25''C 205
© TC = 100°C 83
1
50MT060ULS
127123 rev. C 02/03
International
IEER Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter BreakdownVoltage 600 V VGE = 0V, Ic = 250pA
Vcaon) Collector-to-Emitter Voltage 1.69 2.31 VGE = 15V, Ic = 50A
1.96 2.55 VGE = 15V, Ic = 100A
1.88 2.24 VGE =15V,Ic =100A,TJ =150°C
VGE(th) Gate Threshold Voltage 3 6 lc = 0.5mA
BVR Diode Reverse Breakdown Voltage 600 IR = 200 pA
AVGEOMI Temperature Coeff. of - 13 mW'C VCE = VGE, lc = 500pA
ATJ Threshold Voltage
gfe Forward Transconductance 22 29 S VCE = 50V, Ic = 100A
ICES Collector-to-EmiterLeaking Current 0.25 mA VGE = 0V, VCE = 600V
6 VGE = 0V, I/cs = 600V, To = 150°C
VFM Diode Forward Voltage Drop 1.64 1.82 V IF = 100A, VGE = 0V
1.56 1.74 IF =100A,VGE = 0V, To = 150°C
IGES Gate-to-Emitter Leakage Current * 250 nA VGE = * 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on) 370 555 nC Ic = 100A
Qge GateEmitterCharge (turn-on) 64 96 Vcc = 480V
Qgc GateCollectorCharge (turn-on) 163 245 VGE = 15V
Eon Tum-On Switching Loss 0.7 1.2 mJ Ic = 50A, Vcc = 480V, VGE = 15V,
Eoff Tum-Off Switching Loss 1.7 2.6 Rg = 59
Ets Total Switching Loss 2.4 3.8 Energy losses include tail and diode reverse
recovery
Eon Tum-On Switching Loss 1.1 1.7 mJ lc = 50A, Vcc = 480V, VGE = 15V
Eoff Tum-Off Switching Loss 2.5 3.8 R9 = 59, To = 125''C
Ets Total Switching Loss 3.6 5.5 Energy losses indude tail and diode reverse
recovery
Cies Input Capacitance 9800 14700 VGE = 0V
Coes Output Capacitance 602 903 pF Vcc = 30V
Cres Reverse Transfer Capacitance 121 182 f= 1.0 MHz
Ct Diode Junction Capacitance 118 177 v, = 600V, f = 1.0 MHz
trr Diode Reverse Recovery Time 99 150 ns Vcc = 480V, k; = 50A
Irr Diode Peak Reverse Current 6.5 9.8 A di/dt = 200AIps
er Diode Recovery Charge 320 735 nC R9 = 50
di(rec)M/dt Diode PeakRate of Fall of Recovery 236 Alps
During tr,
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