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4N38A
PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
TOSHIBA 4N38,4N38A(Short)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
4N38(Shori0, 4N38A(Short)
AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm
DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.
TELEPHONE LINE RECEIVER.
TWISTED PAIR LINE RECEIVER. $1 % Fig
HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. 'dl.
RELAY CONTACT MONITOR. tl
.g ll LL. 0
The TOSHIBA 4N38 (Short) through 4N38A (Short) consists of a T.12t0.25 'iii' 7.62t0.25
gallium arsenide infrared emitting diode coupled with a silicon tn"
phototransistor in a dual in-line package. Jo,.
0510.1 1210.15 sg-
0 Switching Speeds : 3ps (Typ.) E, 7.854180
2.542025 oi
0 DC Current Transfer Ratio : 100% (Typ.)
0 Isolation Resistance : 10110 (Min.)
o Isolation Voltage : 2500Vrms (Min.) 11-7A8
TOSHIBA 11-7A8
0 UL Recognized : UL1577, File No. E67349
Weight : 0.4g
PIN CONFIGURATIONS (Top view)
"sit-i,,, Ts
sE Clo
1 : ANODE
2 I CATHODE
3 .' N.C.
4 : EMITTER
5 : COLLECTOR
6 : BASE
980910EBC1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OGaIlium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are
toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products,
follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic
garbage.
OThe products described in this document are subject to the foreign exchange and foreign trade laws.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-03-29 1/6
TOSHIBA 4N38,4N38A(Short)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Continuous) IF 80 mA
Forward Current Derating AIF/ °C 1.07 (*) mA/ T
2 Peak Forward Current (Note 1) IPF 3 A
,4 Power Dissipation PD 150 mW
Power Dissipation Derating APD/ "C 2.0 (*) mW/ "C
Reverse Voltage VR 3 V
Cd Collector-Emitter Voltage BVCEO 80 V
g Collector-Base Voltage BVCBO 80 V
o Emitter-Collector Voltage BVECO 7 V
E Collector Current (Continuous) IC 100 mA
Lil Power Dissipation PC 150 mW
Cl Power Dissipation Derating APc/ 'C 2.0 (*) mW/ T
© Storage Temperature Tstg -55-150 "C
m Operating Temperature Topr -5r-100 "C
2 Lead Soldering Temperature (at 10s) Tsol 260 T
D Total Package Dissipation PT 250 mW
8 Total .Package Power Dissipation APT /°C 3.3 (*) mW /°C
Derating
(Note 1)
(*) Above 25°C ambient.
Pulse width 300ps, 2% duty cycle.
1999-03-29 2/6
TOSHIBA 4N38,4N38A(Short)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Cl Forward Voltage " IF=10mA - 1.15 1.5 V
NI Reverse Current IR VR=3V - - 100 PA
'4 Capacitance CD V=0, f = 1MHz - 30 - pF
DC Forward Current Gain hFE VCE=5V, Ic=500pA - 200 - -
Collector-Emitter
Dd Breakdown Voltage V (BR) CEO 1C=1rnA 80 - - V
o Collector-Base Breakdown - - -
F Voltage V(BR)CBO IC=100pA 80 V
Emitter-Collector
NI = - -
e Breakdown Voltage V(BR)ECO IE 100PA 7 V
[l Collector Dark Current ICEO VCE=60V - 1 50 nA
Collector Dark Current ICBO VCB=60V - 0.1 20 nA
Collector-Emitter - -
Capacitance CCE V=0, f-- 1MHz - 10 - pF
Current Transfer Ratio IC / IF IF-- 10mA, VCE = 10V 10 100 - %
Collector-Emitter
Saturation Voltage VCE (sat) IF=20mA, 1C=4mA - - 1.0 V
Capacitance Input to
© = = - -
m Output Cs VS 0, f 1MHz 0 8 pF
: Isolation Resistance RS VS=5OOV, R.H.E 60% 1011 - - n
D BVS AC, 1 minute 2500 - - Vrms
O . 4N38 1500 - -
O Isolation Voltage 4N38 A BVS (*) AC, peak 2500 - - Vpk
4N38A AC, 1 second 1775 - - Vrms
Turn-On Time tON VCE = 10V, IC = 2mA - 3 -
Turn-Off Time tOFF RL = 1000 - 3 - #S
(*) JEDEC registered minimum BVS, however, TOSHIBA specifies a minimum BVS of
2500Vrms, 1 minute.
1999-03-29 3/6
TOSHIBA
4N38,4N38A(Short)
ALLOWABLE FORWARD CURRENT
11? (mA)
PULSE FORWARD CURRENT le (mA)
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IFP - DR
PULSE WmTHs300prs
Ta=25°C
10-3 10-2 IO-l
DUTY CYCLE RATIO DR
AVF/ATa - IF
0.3 1 3 10
FORWARD CURRENT IF (mA)
FORWARD CURRENT IF (mA) ALLOWABLE COLLECTOR POWER
PULSE FORWARD CURRENT IFp (mA)
DISSIPATION PC (mW)
0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
Ta = 25''C
0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE " (V)
IFP - VFP
PULSE WIDTH s 10ps
REPETITIVE FREQUENCY
= 100Hz
Ta = 25°C
1.0 1.4 1.8 2.2 2.6
PULSE FORWARD VOLTAGE VFP (V)
1999-03-29 4/6
TOSHIBA 4N38,4N38A(Short)
IC -1F IC/IF - 1F
100 33 400
Ta=25°C v Ta=25t
50 VCE--10V B VCE=10V
---- VCE=0.4V ... 300 A
30 g VCE=0.4V
2 g SAMPLE A /
g M 200 /
- 10 a / _ 7
E ili / tver''''''''""
w a 100 4’ "s
g 5 SAMPLE A a " / ""'s
D 5.13 ASAMPLE B
tte 3 D
Fe 0 0 l _ l I
5‘ SAMPLE B 1 3 10 30 100 300
g FORWARD CURRENT IF (mA)
0.5 IC - VCE
20mA Ta = 25°C
l 3 10 30 100
FORWARD CURRENT IF (mA)
COLLECTOR CURRENT [C (mA)
A o 2 4 6 8 10 12 14
g 50 COLLECTOR-EMITTER VOLTAGE VCE (V)
Z VCE (sat) - Ta
5 10 0.5
g IF=10mA
: 5 0.3 Ic=2mA
5‘ 0.1
VOLTAGE VCE (sat) (V)
-60 -40 - 20 0 20 40 60 80 100
COLLECTOR-EMITTER SATURATION
-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C)
1999-03-29 5/6
TOSHIBA
4N38,4N38A(Short)
[CEO (#A>
COLLECTOR DARK CURRENT
SWITCHING TIME (/15)
low - Ta
0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
SWITCHING CHARACTERISTICS - RL
1000 SATURATED OPERATIO
V00: 5V
IF=5mA orLl:
500 VOUT
ir-,'t,st's1'iao T;
0.5 l 3 10 30
LOAD RESISTANCE RL (k0)
COLLECTOR DARK CURRENT ICEO (,uA)
SWITCHIN G TIME (/15)
ICEO - RBE
VCE=24V
Ta= 100°C
100k 1M 10M 00
BASE-EMITTER RESISTANCE RBE (Q)
SWITCHING CHARACTERISTICS - RBE
SATURATED OPERATIO
Ta--25t VCC=5V
3M 1M 300k 100k 30k 10k
BASE-EMITTER RESISTANCE RBE (Q)
1999-03-29 6/6
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