4N36 ,GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERSTOSHIBA 4N35,4N36,4N37(Sh0rt)4N35(Short). 4N36(Short). 4N37(Short)AC LINE/DIGITAL LOGIC ISOLATOR. U ..
4N36M ,6-Pin DIP Package Phototransistor Output OptocouplerAPPLICATIONS • Power supply regulators• Digital logic inputs• Microprocessor inputs 2003 Fairchild ..
4N36M ,6-Pin DIP Package Phototransistor Output OptocouplerFEATURES • Also available in white package by specifying -M suffix, eg. 4N25-M• UL recognized (File ..
4N36S ,6-Pin DIP Package Phototransistor Output Optocoupler GENERAL PURPOSE 6-PINPHOTOTRANSISTOR OPTOCOUPLERS4N25 4N26 4N27 4N28 4N35 4N364N37 H1 ..
4N37 ,GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERSTOSHIBA 4N35,4N36,4N37(Sh0rt)4N35(Short). 4N36(Short). 4N37(Short)AC LINE/DIGITAL LOGIC ISOLATOR. U ..
4N38 ,STANDARD THRU HOLE CASE 730A-04Revision 17-August-01 2–56Figure 1. Forward Voltage vs. Forward Current Figure 4. Normalized Non-sa ..
60CTQ150 ,150V 60A Schottky Discrete Diode in a TO-220AB packageFeaturesThe 60CTQ150 center tap Schottky rectifier series has beenCharacteristics 60CTQ150 Unitsopt ..
60EPF04 ,400V Fast Recovery Diode in a TO-247AC (2-Pin) packageBulletin I2113 rev. D 04/99QUIETIR Series60EPF.. 60CPF..FAST SOFT RECOVERYV < 1.1V @ 30ARECTIFI ..
60EPF06 ,600V Fast Recovery Diode in a TO-247AC (2-Pin) packageapplications are both:Output rectification and freewheeling ininverters, choppers and convertersand ..
60EPF06PBF , Fast Soft Recovery Rectifier Diode, 60 A
60EPF10 ,1000V Fast Recovery Diode in a TO-247AC (2-Pin) packageFeaturesThe 60EPF.. & 60CPF.. fast soft recovery QUIETIRrectifier series has been optimized for com ..
60EPF12 ,1200V Fast Recovery Diode in a TO-247AC (2-Pin) packageBulletin I2130 rev. B 01/01QUIETIR Series60EPF.. 60CPF.. HVFAST SOFT RECOVERYV < 1.2V @ 30A ..
4N36-4N37
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TOSHIBA 4N35,4N36,4N37(Sh0rt)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
4N35(Short), 4N36(Short), 4N37(Short)
AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm
DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.
TELEPHONE LINE RECEIVER.
TWISTED PAIR LINE RECEIVER. |__ffl si', rf,
HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. 'dl
RELAY CONTACT MONITOR. E
e e la tO
The TOSHIBA 4N35 (Short) through 4N37 (Short) consists of a 7.12t0.25 iii" 7.62t0,25
gallium arsenide infrared emitting diode coupled with a silicon I'.
phototransistor in a dual in-line package. ji)
g axrtflel,
0 Switching Speeds .' 3ps (Typ.) . [ml
0 DC Current Transfer Ratio : 100% (Min.)
0 Isolation Resistance : 10110 (Min.)
o Isolation Voltage : 2500Vrms (Min.) 11-7A8
TOSHIBA 11-7A8
0 UL Recognized : UL1577, File No. E67349
Weight : 0.4g
PIN CONFIGURATIONS (Top view)
siiV,, 15
1 : ANODE
2 : CATHODE
3 : N.C.
4 : EMITTER
5 : COLLECTOR
6 '. BASE
961001EBC2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
puiverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
products with other industrial waste or with domestic garbage.
O The products described in this document are subject to foreign exchange and foreign trade control laws.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1998-02-27 1/6
TOSHIBA
4N35,4N36,4N37(Sh0rt)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Continuous) IF 60 mA
Forward Current Derating AIF/°C 0.8 (*) mA/°C
© Peak Forward Current (Note 1) IPF 3 A
a Power Dissipation PD 100 mW
Power Dissipation Derating APD/ T 1.33 (*) mW/ T
Reverse Voltage VR 6 V
M Collector-Emi) Voltage BVCEO 30 V
g Collector-Base Voltage BVCBO 70 V
O Emitter-Collector Voltage BVECO 7 V
W2 Collector Current (Continuous) IC 100 mA
t; Power Dissipation PC 300 mW
© Power Dissipation Derating APc/°C 4.0 (*) mW/ °C
Storage Temperature Tstg -55--150 "C
Operating Temperature Topr -55--100 T
© Lead Soldering Temperature (at 10s) Tsol 260 T
(YI Total Package Power Dissipation PT 300 mW
: Total Package Power Dissipation
. APT/°C 3.3 (*) mW/°C
© Derating
8 BVS 2500 Vrms
Input to Output Isolation 4N35 2500/ 3550 Vrms/
Voltage (AC, 1 Minute) 4N36 BVS (**) 1750/2500 Vpk
4N37 1050/ 1500
(Note 1) Pulse width Ips, 300pps
(*) Above 25°C ambient.
(**) JEDEC registered maximum BVS, however, TOSHIBA specifies a maxium BVS of
2500Vrms, 1 minute.
1998-02-27 2/6
TOSHIBA
4N35,4N36,4N37(Sh0rt)
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IF=10mA 0.8 1.15 1.5
© Forward Voltage VF IF = 10mA, Ta = -55''C 0.9 - 1.7 V
m IF = 10mA, Ta = 100°C 0.7 - 1.4
A Reverse Current IR VR=6V - - 10 PA
Capacitance CD V = o, f = 1MHz - 30 100 pF
DC Forward Current Gain hFE VCE = 5V, IC = 500 pA - 200 - -
Collector-Emitter -
M Breakdown Voltage V (BR) CEO IC - lOmA 30 - - V
Collector-Base Breakdown
8 Voltage V (BR)CBO Ic=100pzA 70 - - V
Emitter-Collector
m = - -
B Breakdown Voltage V (BR) ECO IE 100p A 7 V
E Collector Dark Current ICEO VCE = 10V - 1 50 nA
Collector Dark Current ICEO VCE = 30V, Ta = 100°C - - 500 PA
Collector-Emitter
Capacitance CCE V = 0, f = lMHz - 10 - pF
IF = 10mA, VCE = 10V 100 - -
IF=10mA, VCE=10V 40
Current Transfer Ratio IC / IF Ta-- -55°C - - %
IF=10mA, VCE=10V 40
Ta = 100°C - -
Cl Collector-Emitter
E Saturation Vol tage VCE (sat) IF - lOmA, IC - 0.5mA - 0.1 0.3 V
LL Capacitance Input to - -
8 Output CS Vs=0, f-- 1MHz - 0.8 2.5 pF
0 Isolation Resistance RS VS = 500V, R. H. s 60% 1011 - - n
Input to Output 4N35 Vio = 3550VPk - - 100
Isolation Current 4N36 110 Vio = 2500Vpk - - 100 PA
(Pulse Width = 8ms) 4N37 Vio = 1500Vpk - - 100
Turn-On Time tON VCC = 10V, IC = 2mA - 3 10
Turn-Off Time tOFF RL = 1000 - 3 10 /IS
1998-02-27 3/6
TOSHIBA
4N35,4N36,4N37(Sh0rt)
117 (mA)
ALLOWABLE F0 RWARD CURRENT
- 20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (''C)
IFP - DR
g 3000 PULSE WIDTHS lps
9.. Ta = 25°C
10-3 10-2 IO-l 10
DUTY CYCLE RATIO DR
AVF/ATa - IF
I | l I |
f" 5‘7 .N’ 5° 5"
a: o as on w
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF IATa (mV/°C)
0.3 l 3 10 30
FORWARD CURRENT IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
FORWARD CURRE NT [1:
PULSE FORWARD CURRENT IFp (mA)
- 20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta CC)
IF - VF
50 Ta = 25''C,
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE VF (V)
IFP - VFP
PULSE WIDTHS10ps
REPETITIVE FREQUENCY
= 100Hz
Ta=25°C
0.6 1.0 1.4 1.8 2.2 2.6
PULSE FORWARD VOLTAGE VFP (V)
1998-02-27 4/6
TOSHIBA 4N35,4N36,4N37(Sh0rt)
Ic - IF IC/IF - IF
Ta=25 C Ta=25°C
VCE=10V c.: VCE=10V
- -- - VCE =0.4V - 300
2 h ----VcE=0.4V
li m SAMPLE A /
V m 200 pr
o ‘h /
H E / "s I
E F, / 'v,-::-'''''''"'"
g SAMPLE A F' 100 " 4/ tr,
g ti ,/ 's,
o iii SAMPLE B
a o 0 l l l l
g 1 3 10 30 100 300
g FORWARD CURRENT IF (mA)
IC - VCE
1 3 10 30 100
FORWARD CURRENT y (mA)
COLLECTOR CURRENT '0 (mA)
A 0 2 4 6 8 10 12 14
g COLLECTOR-EMITTER VOLTAGE VCE (V)
is), VCE(sat) - Ta
E IF=10mA
ttt IC=0.5mA
VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
L' 60 - 40 - 20 0 20 40 60 80 100 . - 60 - 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C)
1998-02-27 5/6
TOSHIBA
4N35,4N36,4N37(Sh0rt)
COLLECTOR DARK CURRENT ICEo (,uA)
SWITCHING TIME (#5)
ICEO - Ta
VCE = 24V
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta CC)
SWITCHING CHARACTERISTICS - RL
1000 SATURATED OPERATIO
Vcc=5V
500 VOUT
0.5 1 3 10 30
LOAD RESISTANCE RL (k0)
ICEO VIA)
COLLECTOR DARK CURRENT
SWITCHING TIME (/13)
ICEO - RBE
VCE=24V
Ta = 100°C
100k IM
BASE-EMITTERRESISTANCE RBE (Q)
10M 00
SWITCHING CHARACTERISTICS - RBE
SATURATED OPERATIO
Ta = 25''C VCC = 5V
3M IM 300k 100k 30k 10k
BASE-EMITTER RESISTANCE REF. (n)
1998-02-27 6/6
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