4N30 ,GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERSPIN CONFIGURATIONS (Top view): N.C.O TOSHIBA is continually working to improve the quality and the ..
4N31 ,GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERSMAXIMUM RATINGS (T = 25°C unless otherwise noted)ASTANDARD THRU HOLERating Symbol Value UnitCASE 73 ..
4N32 ,STANDARD THRU HOLE CASE 730A-04
4N32 ,STANDARD THRU HOLE CASE 730A-04TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Sho ..
4N32 ,STANDARD THRU HOLE CASE 730A-04TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Sho ..
4N32 ,STANDARD THRU HOLE CASE 730A-04**Order this documentSEMICONDUCTOR TECHNICAL DATA by 4N29/D*GlobalOptoisolator* *[CTR = 100% Mi ..
60APU02 ,200V 60A Ultra-Fast Discrete Diode in a TO-247AC packageapplications where switching losses are not significant portion of the totallosses.Absolute Maximu ..
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60APU02 ,200V 60A Ultra-Fast Discrete Diode in a TO-247AC packageFeatures• Ultrafast Recoveryt = 35nsrr • 175°C Operating Junction TemperatureI = 60AmpF(AV)Benefi ..
60APU04 ,400V 60A Ultra-Fast Discrete Diode in a TO-247AC packageFeatures• Ultrafast Recoveryt = 50ns (typ)rr • 175°C Operating Junction TemperatureI = 60AmpF(AV) ..
60CNQ045 ,45V 60A Schottky Common Cathode Diode in a D61-6 packagePD-2.195 rev. C 12/9760CNQ... SERIESSCHOTTKY RECTIFIER 60 AmpMajor Ratings and Characteristics De ..
60CNQ045 ,45V 60A Schottky Common Cathode Diode in a D61-6 packageFeaturesThe 60CNQ center tap Schottky rectifier module series hasbeen optimized for very low forwar ..
4N29A-4N30
PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Short)
4N32(Short), 4N32A(Short), 4N33(Short)
AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm
DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.
TELEPHONE LINE RECEIVER.
TWISTED PAIR LINE RECEIVER. r?! si', rf,
RELAY CONTACT MONITOR. 'dl
. . a a LL. w
The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide 1 2 3 m
infrared emitting diode coupled with a silicon photo darlington in a 7.12t0.25 li'' 7621025
dual in-line package. try'
tl 025-0205
0 Switching Time : 100ps (Max.) .-°
0510.1 1.2:015;
0 DC Current Transfer Ratio : 500% 2.54t025 I] 7.as\s.ao
0 Isolation Resistance .' 10110 (Typ.)
0 Isolation Voltage l 2500Vrms (Min.)
11-7A8
0 UL Recognized : UL1577, File No. E67349 TOSHIBA 11-7A8
Weight : 0.4g
PIN CONFIGURATIONS (Top view)
2:3“ 15
: ANODE
: CATHODE
: N.C.
: EMITTER
: COLLECTOR
: BASE
OEOThht'oONJi-t
961001 EBC2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the resppnsibilit of the bpyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
products with other industrial waste or with domestic garbage.
The products described in this document are subject to foreign exchange and foreign trade control laws.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
1998-02-27 1/5
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Continuous) IF 80 mA
Forward Current Derating AIF/ °C 1.07(*) mA/ °C
2 Peak Forward Current (Note 1) IPF 3 A
,4 Power Dissipation PD 150 mW
Power Dissipation Derating APD/ T 2.0(*) mW/ T
Reverse Voltage VR 3 V
M Collector-Emi; Voltage BVCEO 30 V
a Collector-Base Voltage BVCBO 30 V
O Emitter-Collector Voltage BVECO 5 V
NI Collector Current (Continuous) IC 100 mA
ti Power Dissipation PC 150 mW
D Power Dissipation Derating APcl°C 2.0(*) mW/ T
© Storage Temperature Range Tstg -55--150 T
WI Operating Temperature Range Topr -55-100 'C
2 Lead Soldering Temperature Tsol 260 "C
D Total Package Power Dissipation PT 250 mW
8 Total .Package Power Dissipation APT /°C 3.3 (*) mW /°C
Derating
(Note 1) Pulse width 300/s, 2% duty cycle.
(*) Above 25°C ambient.
1998-02-27 2/5
TOSHIBA
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short)
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
© Forward Voltage VF IF=10mA - 1.15 1.5 V
m Reverse Current IR VR=3V - - 100 PA
'4 Capacitance CD V=0, f = 1MHz - 30 - pF
DC Forward Current Gain hFE VCE=5, 10:0.5mA - 10k - -
ttt Collector-Emitter -
: Breakdown Voltage V(BR) CEO IC=1mA 30 - - V
o Collector-Base Breakdown 1
E Voltage V (BR) CBO IC - lOOpA M - - V
Emitter-Collector
WI = - -
Cl Breakdown Voltage V(BR)ECO IE 100/1 A 5 V
Collector Dark Current ICEO VCE = 10V - 1.0 100 nA
4N32, 4N32A 50 - -
Collector 4N33
Output 4N29, 4N29A IC IF = 10mA, VCE = 10V 10 - - mA
Current 4N30
4N31 5 - -
Collector- 4N29, 4N29A
Emitter 4N30, 4N32 - - 1.0
Saturation 4N32A, 4N33 VCE (sat) IF:8mA, IC22mA V
Voltage 4N31 - - 1.2
: Turn-on Time tON - - 5 pas
,4 4N29, 4N29A - - 40
pl, Turn-off 4N30, 4N31 1/,i,r-=ig,):1A' VCC-- 10V
3 Time 4N32, 4N32A tOFF c=5 - - 100 #8
O 4N33
Capacitance Input to - -
Output CS V=0, f-- 1MHz - 0.8 - pF
Isolation Resistance RS V=500V - 10ll - n
BVS AC, 1 minute R.H.E60% 2500 - - Vrms
4N29, 4N29A
Isolation 4N32, 4N32A AC ak 2500 - - V k
Voltage 4N30, 4N31 BVS (*) , pe 1500 p
4N33 - -
4N29A,4N32A AC, 1 second 1775 - - Vrms
(*) JEDEC registered minimum BVS, however, Toshiba specifies a minimum BVS of
2500Vrms 1 minute.
1998-02-27 3/5
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
IF - Ta PC - Ta
100 200
E" ttt
ttd 0A
g 80 " 160
'il A t o
Se; 60 tim 120
E5 2112
m 40 m< 80
t iii,,,?,
o 20 39 40
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (''C) AMBIENT TEMPERATURE Ta CC)
IFP - DR IF - VF
R" 100
g 3000 PULSE WIDTHS 1 Ms 50 Ta=25''C,
st Ta=25°C li 30
a - 10
5:: a 5
Q ttt 3
< 100 g
t 50 ti
2 3 0.5
W2 30 g
3 m 0.3
10 0.1
3 10-3 3 10-2 3 IO-l 3 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8
DUTY CYCLE RATIO DR FORWARD VOLTAGE VF (V)
AVF/ATa - IF IFp - VFP
-3.2 1000
-2.0 50
PULSE WIDTHS10ps
REPETITIVE FREQUENCY
= 100Hz
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVFIATa (mV/°C)
PULSE FORWARD CURRENT IFp (mA)
Ta=25°C
0.1 0.3 l 3 10 30 0.6 1.0 1.4 1.8 2.2 2.6
FORWARD CURRENT IF (mA) PULSE FORWARD VOLTAGE VFp (V)
1998-02-27 4/5
TOSHIBA
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short)
COLLECTOR CURRENT 10 (mA)
CURRE NT TRANSFER RATIO
COLLECTOR CURRENT 10 (mA)
10 - VCE
4mA 3.5mA - 3mA
50 5 2.5mA
Ta = 25°C
IF=0.5mA
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC / IF - IF
3000 VCE=1V
Ta=25°C
Base OPEN
RBE =5.1MQ
0.1 0.3 1 3 10 30 100
FORWARD CURRENT IF (mA)
RBE=5.10
- VCE=1V
--- VCE=1.2V
- 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR CURRENT 10 (mA)
[CEO (A)
COLLECTOR DARK CURRENT
SWITCHING TIME (,us)
30 V00: 1V
Ta=25°C
5 RBE OPEN
0.1 0.3 1 3 10 30 100
FORWARD CURRENT IF (mA)
ICEo - Ta
1 0 - 9
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
SWITCHING TIME - RL
1 3 10 30
LOAD RESISTANCE RL (k0)
1998-02-27 5/5
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