4N32 ,STANDARD THRU HOLE CASE 730A-04
4N32 ,STANDARD THRU HOLE CASE 730A-04TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Sho ..
4N32 ,STANDARD THRU HOLE CASE 730A-04TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Sho ..
4N32 ,STANDARD THRU HOLE CASE 730A-04**Order this documentSEMICONDUCTOR TECHNICAL DATA by 4N29/D*GlobalOptoisolator* *[CTR = 100% Mi ..
4N32 ,STANDARD THRU HOLE CASE 730A-04
4N32 ,STANDARD THRU HOLE CASE 730A-04
60APU02 ,200V 60A Ultra-Fast Discrete Diode in a TO-247AC packageapplications where switching losses are not significant portion of the totallosses.Absolute Maximu ..
60APU02 ,200V 60A Ultra-Fast Discrete Diode in a TO-247AC packageApplicationsThese diodes are optimized to reduce losses and EMI/ RFI in high frequency power condit ..
60APU02 ,200V 60A Ultra-Fast Discrete Diode in a TO-247AC packageFeatures• Ultrafast Recoveryt = 35nsrr • 175°C Operating Junction TemperatureI = 60AmpF(AV)Benefi ..
60APU04 ,400V 60A Ultra-Fast Discrete Diode in a TO-247AC packageFeatures• Ultrafast Recoveryt = 50ns (typ)rr • 175°C Operating Junction TemperatureI = 60AmpF(AV) ..
60CNQ045 ,45V 60A Schottky Common Cathode Diode in a D61-6 packagePD-2.195 rev. C 12/9760CNQ... SERIESSCHOTTKY RECTIFIER 60 AmpMajor Ratings and Characteristics De ..
60CNQ045 ,45V 60A Schottky Common Cathode Diode in a D61-6 packageFeaturesThe 60CNQ center tap Schottky rectifier module series hasbeen optimized for very low forwar ..
4N29-4N32-4N32+
STANDARD THRU HOLE CASE 730A-04
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Short)
4N32(Short), 4N32A(Shortl, 4N33(Short)
AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm
DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.
TELEPHONE LINE RECEIVER.
TWISTED PAIR LINE RECEIVER. 4, % ri',
RELAY CONTACT MONITOR. 'él.
-','r',e'
ll, LL. 0
The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide 1 2 3
infrared emitting diode coupled with a silicon photo darlington in a
3.638%?
dual in-line package.
7.62 l 0.25
0.3 .4 6.25
0 Switching Time : lOOps (Max.)
0 DC Current Transfer Ratio .' 500% 7.85-8.80
0 Isolation Resistance : 10110 (Typ.)
0 Isolation Voltage : 2500Vrms (Min.) 11-7A8
0 UL Recognized : UL1577, File No. E67349 TOSHIBA 11-7A8 I
Weight : 0.4g
PIN CONFIGURATIONS (Top view)
2|:3§ Ch,
3|: J4
: ANODE
.' CATHODE
: N.C.
.' EMITTER
: COLLECTOR
I BASE
030leme
1 2001-06-01
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Continuous) IF 80 mA
Forward Current Derating AIF/°C 1.07(*) mA/ ''C
© Peak Forward Current (Note 1) IPF 3 A
5 Power Dissipation PD 150 mW
Power Dissipation Derating APD/ T 2.0(*) mW/ T
Reverse Voltage VR 3 V
m Collector-Emi; Voltage BVCEO 30 V
g Collector-Base Voltage BVCBO 30 V
O Emitter-Collector Voltage BVECO 5 V
m Collector Current (Continuous) IC 100 mA
t; Power Dissipation PC 150 mW
Cl Power Dissipation Derating APC/ "C 2.0(*) mW/ "C
© Storage Temperature Range Tstg -55--150 "C
m Operating Temperature Range Topr -55-100 "C
2 Lead Soldering Temperature Tsol 260 "C
D Total Package Power Dissipation PT 250 mW
8 Total .Package Power Dissipation APT /°C 3.3(*) mW /°C
Derating
(Note 1) Pulse width 300ps, 2% duty cycle.
(*) Above 25°C ambient.
2 2001-06-01
TOSHIBA
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
© Forward Voltage VF IF=1OmA - 1.15 1.5 V
m Reverse Current IR VR=3V - - 100 PA
'4 Capacitance CD V=0, f=1MHz - 30 - pF
DC Forward Current Gain hFE VCE=5, 10:0.5mA - 10k - -
‘35 Colleetor-Emitter
:9 Breakdown Voltage V(BR) CEO IC=1mA 30 - - V
o Collector-Base Breakdown -
E Voltage V (BR) CBO IC - 100PA 30 - - V
Emitter-Collector
m = - -
Cl Breakdown Voltage V(BR)ECO IE 100p A 5 V
Collector Dark Current ICEO VCE=10V - 1.0 100 nA
4N32, 4N32A 5O
Collector 4N33
Output 4N29, 4N29A IC IF-- lOmA, VCE = 10V 10 - - mA
Current 4N30
4N31 5 - -
Collector- 4N29, 4N29A
Emitter 4N30, 4N32 - - 1.0
Saturation 4N32A, 4N33 VCE(sat) IF=8mA, IC=2mA V
Voltage 4N31 - - 1.2
'ii Turn-on Time tON - - 5 ,us
,4 4N29, 4N29A - - 40
cu Turn-off 4N30, 4N31 1F:20:1n;A’ VCC=10V
a Time 4N32, 4N32A tOFF c=50 - - 100 #3
O 4N33
Capacitance Input to - -
Output cs V=0, f-- lMHz - 0.8 - pF
Isolation Resistance RS V=500V - 1011 - n
BVS AC, 1 minute R. H.S60% 2500 - - Vrms
4N29, 4N29A
Isolation 4N32, 4N32A AC k 2500 - - V k
Voltage 4N30, 4N31 BVS (*) ' pea 1500 p
4N33 - -
4N29A,4N32A AC, 1 second 1775 - - Vrrns
(*) JEDEC registered minimum BVS, however, Toshiba specifies a minimum BVS of
2500Vrms 1 minute.
2001 -06-01
TOSHIBA
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
ALLOWABLE FORWARD CURRENT
117 (mA)
PULSE FORWARD CURRENT IFp
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
0 20 40 60
AMBIENT TEMPERATURE Ta (°C)
IFP - DR
PULSE WIDTHé Ips
Ta = 25°C
10-3 3 10-2 3
DUTY CYCLE RATIO DR
AVF/ATa - II?
0.3 1 3
FORWARD CURRENT
IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
FORWARD CURRENT 11? (mA)
PULSE FORWARD CURRENT IFp (mA)
PC -Ta
0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
Ta = 25°C
0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE VF (V)
IFP - VFP
PULSE WIDTH s 10 ,as
REPETITIVE FREQUENCY
= 100Hz
Ta=25°C
1.0 1.4 1.8 2.2 2.6
PULSE FORWARD VOLTAGE va (V)
2001 -06-01
TOSHIBA
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
COLLECTOR CURRENT 10 (mA)
Icllp (%)
CURRENT TRANSFER RATIO
COLLECTOR CURRENT 10 (mA)
IC - VCE
4mA 3.5mA - 3mA
IF=0.5mA
2 4 6 8 10 12
Ta = 25°C
c0LLECT0RaNITTER VOLTAGE VCE (V)
IC/IF - IF
VCE=1V
Ta = 25°C
Base OPEN
RBE=5.1MQ
0.3 1 3 10 30
FORWARD CURRENT IF (mA)
IC -Ta
RBE =5.IQ
- VCE = 1V
--- VCE=12V
-20 0 20 40 60 80
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR CURRENT 10 (mA)
ICEO (A)
COLLECTOR DARK CURRENT
SWITCHING TIME (#s)
30 Vcc=1V
Ta=25°C
5 REE OPEN
0.1 0.3 1 3 10 30 100
FORWARD CURRENT IF (mA)
ICEO - Ta
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta CC)
SWITCHING TIME - RL
IF=1mA
RBE=5.1M.Q
50 VCC =5V
Ta=25°C
1 3 10 30
LOAD RESISTANCE RL (k0)
2001 -06-01
TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Sh0rt)
RESTRICTIONS ON PRODUCT USE
000707EBC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
O The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2001-06-01
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