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4N25
4N25 · General Purpose Phototransistor Optocoupler
TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
4N25(Short), 4N25A(Short), 4N26(Short), 4N27(Short), 4N28(Short)
AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm
DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.
TELEPHONE LINE RECEIVER.
TWISTED PAIR LINE RECEIVER. 4 TEE ri',
HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. 'fd,
RELAY CONTACT MONITOR. E
.J_1 .u [h, m
The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a 7.12:0.25 'ik? 7.621025
gallium arsenide infrared emitting diode coupled with a silicon "if,,''.
phototransistor in a dual in-line package.
0.3 .4 6.25
0 Switching Speeds : 3ps (Typ.) 73543.80
q DC Current Transfer Ratio .' 100% (Typ.)
0 Isolation Resistance : 10110 (Min.)
0 Isolation Voltage : 2500Vrms (Min.) 11-7A8
4t UL Recognized .' UL1577, File No. E67349 TOSHIBA 11-7A8
Weight : 0.4g
PIN CONFIGURATIONS (Top view)
2E1\‘ 35
3|: J4
: ANODE
.' CATHODE
: N.C.
: EMITTER
: COLLECTOR
.' BASE
GUIQCONH
1 2001-06-01
TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Continuous) IF 80 mA
Forward Current Derating AIF/ "C 1.07 (*) mA/ ''C
© Peak Forward Current (Note 1) IPF 3 A
5 Power Dissipation PD 150 mW
Power Dissipation Derating APD/ T 2.0 (*) mW/ T
Reverse Voltage VR 3 V
m Collector-Emi; Voltage BVCEO 30 V
g Collector-Base Voltage BVCBO 7 O V
O Emitter-Collector Voltage BVECO 7 V
m Collector Current (Continuous) IC 100 mA
t; Power Dissipation PC 150 mW
Cl Power Dissipation Derating APC/ "C 2.0 (*) mW/ "C
© Storage Temperature Range Tstg -55--150 "C
m Operating Temperature Range Topr -55-100 "C
2 Lead Soldering Temperature (10s) Tsol 260 "C
D Total Package Power Dissipation PT 250 mW
8 Total .Package Power Dissipation APT /°C 3.3 (*) mW /°C
Derating
(Note 1) Pulse width 300ps, 2% duty cycle.
(*) Above 25°C ambient.
2 2001-06-01
TOSHIBA
4N25,4N25A,4N26,4N27,4N28(Short)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
© Forward Voltage VF IF-- 10mA - 1.15 1.5 V
m Reverse Current IR VR=3V - - 100 PA
'4 Capacitance CD V = 0, f= 1MHz - 30 - pF
DC Forward Current Gain hFE VCE = 5V, IC = 500PA - 200 - -
Colleetor-Emitter
Di Breakdown Voltage V (BR) CEO IC - lmA, IF=0 30 - - V
O Collector-Base Breakdown -
t Voltage V (BR) CBO IC - 100PA 70 V
Emitter-Collector
WI = - -
F Breakdown Voltage V (BR) ECO IE 100p A 7 V
: Collector Dark Current ICEO VCE=10V - 1 50 nA
Collector Dark Current ICBO VCB= 10V - 0.1 20 nA
Collector-Emi)
Capacitance CCE V - o, f - lMHz - 10 - pF
Current Transfer Ratio IC / IF IF = 10mA, VCE = 10V 20 100 - %
Collector-Emitter
Saturation Voltage VCE (sat) IF - 50mA, IC - 2mA - 0.1 0.5 V
Capacitance Input to - -
Output CS VS=0, f= 1MHz - 0.8 - pF
3 Isolation Resistance RS Vs = 500V, R. H. s 60% 1011 - - n
,4 BVS AC, 1 minute 2500 - - Vrms
c., I 1 ti 4N25, 4N25A 2500 - -
8 5211:1121 4N26, 4N27 BV (*) AC, Peak 1500 - - Vpk
o g 4N28 S 500 - -
4N25A AC, 1 second 1775 - - Vrms
. . VCE = 10V, IC = 2mA
Rise / Fall Time tr / tf RL = 1000 - 2 - ps
' . VCB = 10V, ICE = 50 PA
Rise / Fall Time tr/ tf RL = 1000 - 200 - ns
(*) JEDEC registered minimum BVS, however, TOSHIBA specifies a minimum BVS of
2500Vrms, 1 minute.
2001 -06-01
TOSHIBA
4N25,4N25A,4N26,4N27,4N28(Short)
ALLOWABLE FORWARD CURRENT
1}; (mA)
- 20 0 20 40 60 80 1 00 1 20
AMBIENT TEMPERATURE Ta (°C)
IFP - DR
30 PULSE WIDTHé300/zs
Ta = 25'C
PULSE FORWARD CURRENT IFP (mA)
10-3 10-2 IO-l 10
DUTY CYCLE RATIO DR
AVF/ATa - IF
[ti? -2.8
m“ -2.4
'iiise
ES 2.0
kt -1.6
'jr,tl,
5% _1.2
o0 -0.8
0.1 0.3 1 3 10 30
FORWARD CURRENT IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
FORWARD CURRENT 112‘ (mA)
PULSE FORWARD CURRENT In:
0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
Ta = 25°C
0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE VF (V)
IFP - VFP
PULSE WIDTH s: 10ps
REPETITIVE FREQUENCY
= 100Hz
Ta = 25''C
1.0 1.4 1.8 2.2 2.6
PULSE FORWARD VOLTAGE VFp (V)
2001 -06-01
TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short)
IC - IF IC/IF - IF
/ Ta=25°C
t, ,,,,/'" VCE=10V
- 120 / - - - -
g SAMPLE A / VCE=0.4V
M [r/ 'he
Ci E 80 // \
E m /'
S? ttt " ...--
a F 40-SAMPLE ya-we'-''''"--" _
E E //
2: SAMPLE A SAMPLE B ii 7/
ttt 1 3 10 30 100 300
8 FORWARD CURRENT IF (mA)
IC - VCE
Ta = 25''C
1 3 10 30 100
FORWARD CURRENT IF (mA)
COLLECTOR CURRENT 10 (mA)
IC - Ta 0 2 4 6 8 10
Ta=25°C C0LLEcT0R-EMITTER VOLTAGE VCE (V)
VCE =10v
100 VCE (sat) - Ta
COLLECTOR CURRENT 10 (mA)
VOLTAGE VCE (sat) (V)
COLLECTOREMI 1 [ER SATURATION
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta CC)
5 2001-06-01
TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short)
ICEO - Ta ICEO - RBE
VCE=24V
Ta-- 100°C
COLLECTOR DARK CURRENT [CEO
100k IM 10M oo
BASE-EMITTER RESISTANCE RBE (Q)
COLLECTOR DARK CURRENT [CEO
SWITCHING CHARACTERISTICS - RBE
SATURATED OPERATIO
Ta=25°C Vcc=5V
1F 'i'--
0 20 40 60 80 100 120 (i
AMBIENT TEMPERATURE Ta (°C) 0
SWITCHING CHARACTERISTICS - RL
1000 SATURATED OPERATIO 'ir
Vcc=5V
IF=5mA 0: RL g
500 CC, VOUT F
o- 'i'
300 L E
a 100 Lts
t 3M IM 300k 100k 30k 10k
BASE-EMITTER RESISTANCE RBE (Q)
0.5 l 3 10 30
LOAD RESISTANCE RL (k0)
6 2001-06-01
TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short)
RESTRICTIONS ON PRODUCT USE
000707EBC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
O The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
7 2001-06-01
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