3SK258 ,RF Dual Gate FETsAPPLICATIONS.2.1i0.lRn nnri nr Cross Mnd 1112 ti rm Pnrf'nrm n h an1. 25i0.1's''")"''"" v-v~~ -r__. ..
3SK259 ,RF Dual Gate FETsAPPLICATIONS.2.1i0.l. . 1. 2r3c0. 1O Suverior Cross Modulation Performance. (lil'.]')]]'--)--]))--' ..
3SK263 ,N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3SK274 ,RF Dual Gate FETsAPPLICATIONS. Unit in mmI\III\\III\IIIII\II nA'I'IRIl-l‘ f-r," r-oet2.1+0.1IVIHAIIVIUIVI KAI INUD t ..
3SK284 ,N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmMAXIMUM RATINGS (Ta = 25°C)CTT A RA CTERIR’FTC SVMROT. RATINC, I TNTT 1. 25 ..
3SK291 ,Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier ApplicationsApplications Unit: mm Superior cross modulation performance Low reverse transfer capacitanc ..
51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
520101 , Metric OMNI-BLOK Fuse Block Molded Base Type
5203 ,4A SCRsapplications wherethe available gate current is limited, such as motorcontrol for hand tools, kitch ..
521-1 ,Winfield Corporation - 1.8V LVCMOS Surface Mount Crystal Clock Oscillator
52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK258
RF Dual Gate FETs
TOSHIBA 3SK258
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
35K258
TV TUNER, VHF RF AMPLIFIER APPLICATIONS. Unit in mm
FM TUNER APPLICATIONS.
2. 1 i0. 1
1 2rk0. 1
0 Superior Cross Modulation Performance. 1 'ri
0 Low Reverse Transfer Capacitance : Crss=0.015pF (Typ.) N J 7 ( l?
0 Low Noise Figure ' NF=1.1dB (Typ.) El :3 i iii
N 4‘ 2 3 cs'
MAXIMUM RATINGS (Ta = 25°C) EE- 1 tor----
CHARACTERISTIC SYMBOL RATING UNIT 3
m2 TTV Tr.. - L aa'
Drain-Source Voltage VDS 13.5 V uiii,'''rc.''-"-"- l 33
Gate l-Source Voltage VGlS i8 V elf, l l _C_
- 1. GATE 1 a
Gate 2 Source Voltage VGZS :8 V fl. G ATE 2 ?‘
Drain Current ID 30 mA 3. DRAIN c,
Drain Power Dissipation PD 100 mW USQ d. SOURCE
Chanel Temperature Tch 125 "C JEDEC -
Storage Temperature Range Tstg -65--126 °C EIAJ -
TOSHIBA 2-2K1B
Weight : 0.006g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS Vpszo, VGlS= 16V, Vstzo - - 150 nA
Gate 2 Leakage Current Iggss VDs=0, VGls=0, VG2S-- i6V - - :50 nA
. VGlS= -IV, Vstz -IV
Drain-Source Voltage V (BR) DSX ID = 100PA 13.5 - - V
Drain Current IDSS VDS=6V, vG1s=0, VG23=4.5V 0 - 0.1 mA
Gate l-Source Cut-off Voltage VG1S(OFF) VDs=6V, VG2S=4.5V, ID=100pA O - 1.0 V
Gate 2-Source Cut-off Voltage VGZS(OFF) Vns--6V, VG13=4V, ID=100pA 0.5 1.0 1.5 V
VDS = 6V, Vtyts = 4.5V
Forward Transfer Admittance |st| ID = 10mA, f= lkHz - 13 - mS
Input Capacitance Ciss VDS = 6V, vats = 4.5V 2.1 2.7 3.3 pl?
Reverse Transfer Capacitance Crss ID = 10mA, f: IMHz - 0.015 0.03 pF
Power Gain Gps VDS = 6V, vas = 4.5V 23 27 - dB
Noise Figure NF ID = 10mA, f: 200MHz (Fig.1) - 1.1 2.2 dB
Marking
H2 H 1
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
TOSHIBA
3SK258
1031? OUTPUT
1000pF 1
INPUT 1qu . J; .
RG=500 /' L1
m th x» h.
,-i 00-13
o 'l, Je
/" RL=5OQ
L1 : 1mm¢ Ag Plated Copper Wire, 2 Turns, 8mm ID
L2 : 1mm¢ Ag Plated Copper Wire, 2.5 Turns, 8mm ID
Fig.1 200MHz, Gps, NF TEST CIRCUIT
ID - VDS
COMMON
SOURCE
l? VGlS=4V
5 Ta=25°C
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGIS
COMMON
SOURCE
2 VDS=6V
g Ta=25°C
FE, 4.0
-1 0 1 2 3 4
GATE I-SOURCE VOLTAGE leS (V)
ID - VDS
COMMON
SOURCE VGls=4-0V
vas = 4.5V
Ta = 25°C 3.5
2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VG2S
COMMON
SOURCE
VDS = 6V
Ta = 25'C
1 2 3 4 5
GATE 2-SOURCE VOLTAGE vas (V)
961001EAA2'
O The information contained herein is subject to change without notice.
O The information contained herein is presented only as a guide for the aptplications
CORPORATION for any infringements of intellectual property or pther.rights o the third
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
of our products. No responsibility is assumed by TOSHIBA
games which may result from its use. No license is granted
RPORATION or others.
TOSHIBA
lstl - VGIS
COMMON
SOURCE
VDS = 6V
Ta = 25°C
IYfSI (m5)
FORWARD TRANSFER ADMITTANCE
- 1 0 1 2 3 4
GATE l-SOURCE VOLTAGE VGlS (V)
Gps, NF - VDS
COMMON SOURCE
Vats--4.5V
ID = 10mA
A r: 200MHz
g Ta--25''C
0 2 4 6 s 10 12 .
DRAIN-SOURCE VOLTAGE vDs (V)
Gps - VGZS
40 l l l l
A 20 / . VDD
V J VG2s A A
U 0 I ,
a / J E
5 -20 VDD=6V (=VDs)
a +2000 (=R)>(10mA
" -40 J at VG2S=4.5V
f=200MHz, Ta=25°C
o 2 4 6 8 10
GATE 2-SOURCE VOLTAGE ngs (V)
NOISE FIGURE NF
FORWARD TRANSFER ADMITTANCE
Istl (mS)
INPUT CAPACITANCE Ciss (pF)
INPUT SUSCEP’I‘ANCE bis (mS)
3SK258
lstl - ID
COMMON
SOURCE
VDS = 6V
Ta = 2S'C
0 4 s 12 16 20
DRAIN CURRENT ID (mA)
Ciss - VGZS
COMMON SOURCE
VDS = 6V
VGlS .. VG2s = d.5V
ID = 10mA
f= IMHz
Ta = 25°C
-4 -2 o 2 4
GATE 2-SOURCE VOLTAGE vas (V)
COMMON SOURCE
VDS = 6V
VGZS = 4.5V
ID = 10mA
Ta = 25°C
-2 0 2 4 6 8 10
INPUT CONDUCTANCE gis (mS)
TOSHIBA
3SK258
Yfs - f
FORWARD TRANSFER CONDUCTANCE gfs (mS)
0 2 4 6 8 10 12
COMMON SOURCE
VDs=6V
-2 Vg2s=4.5V
ID - 10mA
Ta=25°C
FORWARD TRANSFER SUSCEPTANCE
bfs (mS)
OUTPUT SUSCEPTANCE hos
COMMON SOURCE
0.2 VDS=6V
V035: 4.5V
0.1 ID = 10mA
Ta = 25''C
0 0.1 0.2 0.3 0.4 us as 0.7
OUTPUTCONDUCTANCE Ms (ms)
REVERSE TRANSFER SUSCEPTANCE
DRAIN POWER DISSIPATION Pr) (mW)
REVERSE TRANSFER CONDUCTANCE grs (mS)
-0.04 0 0.04 0.08 0.12 0.16 0.2
COMMON SOURCE
VDS=6V
-0.02 . . VG25=4.5V
ID=10mA
Ta = 25'C
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
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