3SK153 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)3SK153TV TUNER, UHF RF AMPLIFIER
3SK153 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)APPLICATIONS0 Superior Cross Modulation Performance.0 Low Reverse Transfer Capacitance : Crss=0.025 ..
3SK153 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mmTV TUNER VHF WIDE BAND RF AMPLIFIER
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51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
520101 , Metric OMNI-BLOK Fuse Block Molded Base Type
5203 ,4A SCRsapplications wherethe available gate current is limited, such as motorcontrol for hand tools, kitch ..
521-1 ,Winfield Corporation - 1.8V LVCMOS Surface Mount Crystal Clock Oscillator
52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK153
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)
TOSHIBA 3SK153
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
35K1153
TV TUNER, UHF RF AMPLIFIER APPLICATIONS Unit in mm
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS 02
2 at 03
0 Superior Cross Modulation Performance.
ct Low Reverse Transfer Capacitance : Crss=0.025pF (Typ.) g
0 Low Noise Figure : NF=2.6dB (Typ.) tl
MAXIMUM RATINGS (Ta = 25°C) C;
CHARACTERISTIC SYMBOL RATING UNIT . 1 568%?
Drain-Source Voltage VDS 13.5 V 's-sei' .3: I g L33
Gate l-Source Voltage VGlS uF8 V 'ii , . ar. c+iei
Gate 2-Source Voltage ng3 i8 V 3.: alle I v-'
Drain Current ID 30 mA 5° 2
Drain Power Dissipation PD 150 mW l. G ATE 1 ii,
Channel Temperature Tch 125 "C 2. GATE 2
-- o 3. DRAIN
Storage Temperature Range Tstg -55 125 C 4. SOURCE
Markzing 1 SMQ
cl III JEDEC -
U I EIAJ -
n U TOSHIBA 2-3J1A
3 4 Weight : 0.013g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS VDS=0, VGlS= i6V, VG2S=0 - - -1c50 nA
Gate 2 Leakage Current IG2SS Vpszo, VG1S=0, VG2S-- i6V - - :50 nA
. VG1s= -4V, VG2S-- -4V,
Drain-Source Voltage V (BR) DSX ID = 100PA 13.5 - - V
Drain Current IDSS (Note) VDS =6V, VGlS =0, VGZS = 3V 0 - 2 mA
Gate 1-Source Cut-off VDs=6V, VG25=3V,
Voltage VGIS (OFF) ID = 100 PA - 1.5 - 1 V
Gate 2-Source Cut-off VD326V, VGlS=3V,
Voltage VG2S (OFF) ID = 100 PA - 1.0 - 1 V
. VDS = 6V, VG2S = 3V,
Forward Transfer Admittance lstl ID = 10mA, f-- 1kHz - 21 - mS
Input Capacitance Ciss VD326V, VG2323V, 1.8 2.7 3.6 pF
Reverse Transfer Capacitance Crss ID = 10mA, f = 1MHz - 0.025 0.05 pF
Power Gain Gps VDS =6V, ngs =3V, 14 18.5 - dB
Noise Figure NF ID = 10mA, f = 800MHz (Fig.1) - 2.6 4.0 dB
Note : IDSS Classification 0 : 0~2mA 961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-10-28 1/4
TOSHIBA 3SK153
OUTPUT
RL = 500
l lOOOpF
Fl 1000pF
lOOOpF
o Cl o o
o ,2d o o
F‘ co ,-, -
VG2S VDS
LI-HA : ¢0.8mm SILVER PLATED COPPER WIRE
C .' AIR TRIMMER TTA25A200A (MURATA MFG. Co., LTD. )
RFC 1 : ¢0.35mm COPPER WIRE 3mm ID, 7T
RFC 2 : ¢0.35mm COPPER WIRE 3mm ID, lOT
ID - VDS ID - VDS
COMMON SOURCE COMMON
SOURCE VG23=3.5V
VG2s=3V VGIS=3V
_ T =2 tt A = o
f, a 5 C VGIS=3-5V li Ta 25 C
0 2 4 6 8 10 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
1998-10-28 2/4
TOSHIBA
3SK153
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE
”(‘51 (m8)
POWER GAIN GPS ((18)
ID - VGIS
COMMON SOURCE
VDS = 6V
Ta = 25°C
vats = 4V
-2 -1 0 1 2 3
GATE 1-SOURCE VOLTAGE VGls (V)
lstl - VGIS
COMMON SOURCE
VDs=6V
Ta = 25°C
-2 -1 0 1 2 3
GATE 1-SOURCE VOLTAGE VGls (V)
Gps, NF - VDS
COMMON
SOURCE
ID = mm
f-- 800MHz Gps
Ta = 25°C 3
VG2s=4V
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
NOISE FIGURE NF (dB)
11) (mA)
DRAIN CURRENT
DRAIN POWER DISSIPATION PD (mW)
POWER GAIN Gps (dB)
ID - VGZS
COMMON SOURCE 3.5
VDS = 6V
Ta = 25°C
VGlS=4V
-1 0 1 2 3
GATE 2-SOURCE VOLTAGE vats (V)
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (°C)
Gps - VG2S
BIAS CIRCUIT
J R=2009
VDD=6V
(=vDs) +R><10mA
at VG23= 3V
f = 800MHz
Ta = 25°C
- 1 0 l 2 3 4
GATE 2-SOURCE VOLTAGE vats (V)
1998-10-28 3/4
TOSHIBA
POWER GAIN Gps (dB)
bfs (mS)
FORWARD TRANSFER SUSCEPTANCE
OUTPUT SUSCEPTANCE hos
Gps, NF - f
30 I 6
COMMON SOURCE
VDS=6V \\&s
VG2s=3V "s,
20 ID=10mA "ss, 4
Ta=25°C
10 // 2
.,.-''
50 100 300 500 1000
FREQUENCY f (MHz)
FORWARD TRANSFER CONDUCTANCE grs (mS)
30 5 10 15 20 25 30
COMMON SOURCE
VDS = 6V
Vst = 3V
ID = 10mA
Ta = 25°C
0.3 COMMON SOURCE
VDs=6V
VG2S--3V
0.1 ID-- 10mA
0.05 Ta=25°C
0 0.2 0.4 0.6 0.8 1.0 1.2
OUTPUT CONDUCTANCE gos (mS)
NOISE FIGURE NF
REVERSE TRANSFER SUSCEPTANCE
INPUT SUSCEPTANCE bis (mS)
hrs (/15)
3SK153
COMMON SOURCE
VDS = 6V
Vst = 3V
ID = 10mA
Ta = 25°C
2 4 6 8 10 12
INPUT CONDUCTANCE gis (mS)
REVERSE TRANSFER CONDUCTANCE gm (PS)
0 100 200 300 400 500
f-- IGHz
COMMON SOURCE
VDS = 6V
VG2s = 3V
ID = 10mA
Ta = 25°C
1998-10-28 4/4
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