3SK151 ,N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS)APPLICATIONSDOJNE.ef-lo0 High Conversion Fain : Gcs=24.5dB (Typ.)0 Low Noise Figure : NFCS=3.3dB (T ..
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3SK151
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS)
TOSHIBA 3SK151
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
351(151]
TV TUNER VHF MIXER APPLICATIONS Unit in mm
VHF RF AMPLIFIER APPLICATIONS
0 High Conversion Fain : Gcs=24.5dB(Typ.)
0 Low Noise Figure : Nch=3.3dB (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
9 1.50-0,15
Drain-Source Voltage VDS 15 V ge A' 2 mm
Gate l-Source Voltage VGlS i8 V li. Ed: 00 é;
Gate 2-Source Voltage ngs i8 V ca: all- l D Z
Drain Current In 30 mA 5" 5',
Drain Power Dissipation PD 150 mW 1 GATE 1 E
Channel Temperature Tch 125 "C 2: G ATE 2 ci
Storage Temperature Range Tstg -55--125 "C 3. DRAIN
. 4. SOURCE
Marking
2 1 SMQ
cl El JEDEC -
U H EIAJ -
tl Cl TOSHIBA 2-3J1A
3 4 Weight .' 0.013g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS VDS = o, VGlS = i 6V, VG2S =0 - - i50 nA
Gate 2 Leakage Current IGZSS VDs=0, VG1s=0, vas-- i6V - - i50 nA
. VGlS= -4V, VG2S= -4V,
Drain-Source Voltage V (BR) DSX ID-- 100/1A 15 - - V
Drain Current IDSS (Note) Vns--6V, VG1S=0, VG23=3V 3 - 14 mA
Gate 1-Source Cut-off VDS=6V, VG23=3V,
Voltage VGlS (OFF) ID-- 100PA -0.15 - -1.5 V
Gate 2-Souree Cut-off VDS--6V, VGlsz3V,
Voltage VG2S (OFF) ID = 100 PA 0 - - 1.0 V
. VDS = 6V, ngs = 3V,
Forward Transfer Admittance lYfel ID = 10mA, f= lkHz - 27 - mS
Input Capacitance Ciss VDS = 6V, VG2323V, - 2.7 3.6 pF
Reverse Transfer Capacitance Crss ID = 10mA, f = 1MHz - 0.025 0.04 pF
Conversion Gain GCS VDD-- 10V, f = 200MHz 21 24.5 - dB
Noise Figure NFCS fL= 245MHz (500mVrms) (Fig.1) - 3.3 5.5 dB
Note : IDSS Classification Y : 3--7mA, GR : 6--14mA
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-10-28 1/4
TOSHIBA 3SK151
fL=245MHz gon L1 lpF
(500mV ) I- 1000pF
rms d -l fo = 45MHz
cu, 509
t:2, m
4PF lOOOpF S 1 2
fs = 200MHz © ll ' ll
L2 i,',' , £3 't,
m tum o
lOOOpF
i1 aj‘if
[—131000p
21 la 2];
O O l,
VG1(= 1.35V) ng (= 5.5V) VDD (= 10V)
L1 : ¢6.5mm BOBBIN WITH FERRITE CORE, ¢0.7mm UEW, 2T
L2 .' ¢6.5mm BOBBIN WITH FERRITE CORE, ¢o.7mm UEW, 2T
L3 : 3mm ID, ¢0.5mm UEW, 4T
L4 : Mmm BOBBIN WITH FERRITE CORE, ¢0.35mm UEW, 7T
RFC : 100PH
Fig.1 200MHz GCS, NFCS TEST CIRCUIT
ID - VDS ID - VDS
COMMON SOURCE COMMON SOURCE
Ta=25°C Ta=25°C
"iii VG2S=3V "iii VGlS=3V
v =1 v
E VGlS V E
- 0.8 P
E 0.6 E
O 0.4 O
2 0.2 2
D 0 Cl
0 2 4 6 8 10 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
1998-10-28 2/4
TOSHIBA
3SK151
ID (111A)
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE
[stl (mS)
REVERSE TRANSFER SUSCEP’I‘ANCE
hrs (/13)
ID - VGIS
COMMON SOURCE 3.6
Ta = 25''C 3.2
VDS = 6V
-2 -1 o 1 2 3
GATE l-SOURCE VOLTAGE VGls (V)
lstl - VGlS
COMMON SOURCE
Ta = 25°C
VDS = 6V
f = IkHz
VG23=3.2V
-2 -1 o 1 2 3
GATE l-SOURCE VOLTAGE VGlS (V)
REVERSE TRANSFER CONDUCTANCE grs (PS)
-40 0 40 80 120 160
500MHz
100 COMMON SOURCE
-20 150 ( 350 - Ta=25°C
300 VDS = 6V
200 250 VG2s=3V
I = 10mA
-40 f D
11) (mA)
INPUT SUSCEPTANCE bis (1118) DRAIN CURRENT
FORWARD TRANSFER SUSCEP’I‘ANCE
ID - chs
COMMON SOURCE
Ta=25°C
VDS=6V
VGlS= -0.4V
-1 0 1 2 3 4
GATE 2-SOURCE VOLTAGE vats (V)
Yis - f
COMMON SOURCE
150 Ta=25°C
100 Vros--6v
I VG25=3V
50MHz ID=10mA
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT CONDUCTANCE gis (mS)
st - f
FORWARD TRANSFER CONDUCTANCE gfs (mS)
10 14 18 22 26 30
COMMON SOURCE
Ta = 25°C 50
VDS = 6V
chs = 3V 100
ID = 10mA
500MHz
1998-10-28 3/4
TOSHIBA
3SK151
CONVERSION GAIN 605 (dB) OUTPUT SUSCEPTANCE hos (mS)
CONVERSION GAIN Gcs (dB)
200 COMMON SOURCE
150 Ta = 25°C
/ VDs=6V
100 VGZS=3V
50 I ID-- 10mA
0 0.2 0.4 0.6 0.8 1.0
OUTPUT CONDUCTANCE gos (mS)
GCS, NFCS - VGZS
COMMON SOURCE
Ta = 25°C, Fig.1
VDD = 10V
VG1 = 1.35V
fL INPUT = 500mV
fs = 200MHz
fL = 245MHz
1 2 3 4 5 6 7
GATE 2-SOURCE VOLTAGE vats (V)
GCS, NFCS - VDD
30 6.5
COMMON SOURCE
Ta=25°C, Fig.1
28 ID=6mA o.0
(WITHOUT fL INPUT)
26 fL INPUT=500mVrmS 5.5
fs=200MHz - GCS
fL=245MHz
24 _ 5.0
22 p"; 44V 4.5
20 r ll l-..., VG2S--5V -4.0
3V -- Y Y (WITHOUT fL INPUT) _
“ A (lt" I
18 3.5
16 3.0
0 2 4 6 8 10 12 14
SUPPLY VOLTAGE VDD (V)
NOISE FIGURE NFCS
NOISE FIGURE NFCS (dB)
DRAIN POWER DISSIPATION P1) (mW)
CONVERSION GAIN GCS (dB)
CONVERSION GAIN Gas (dB)
PD - Ta
100 "N
50 's,
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
GCS, NFCS - ID
COMMON SOURCE
Ta = 25''C, Fig.1
VDD = 10V
sv/E = 4V (WITHOUT fL INPUT)
f PUT = 500mV
k = 200MHz, fL = uglifH,
0 2 4 6 8 10 12 14 16
DRAIN CURRENT ID (mA)(WITHOUT fL INPUT)
GCS, NFCS - fL INPUT
COMMON SOURCE
Ta = 25°C, Fig.1
VDD = 10V
VG2 = 5.5V
VGl = 1.35V
rs = 200MHz
fL = 245MHz
0 100 200 300 400 500 600 700 800
LOCAL INPUT LEVEL fL INPUT (mVrms)
NOISE FIGURE NFCS
NOISE FIGURE NFCS (dB)
1998-10-28 4/4
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