3SK126 ,N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo0 Superior Cross Modulation Performance.l9i021900 Low Reverse Transfer Capac ..
3SK127 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo. Superior Cross Modulation Performance.. Low Reverse Transfer Capacitance : ..
3SK131 ,MOS FIELD EFFECT TRANSISTORDATA SHEETDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK131RF AMP. FOR VHF TV TUNERN-CHANNEL S ..
3SK135A ,RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLDDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
3SK135A-T1 ,For UHF TV tuner high frequency amplificationDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
3SK135A-T2 ,For UHF TV tuner high frequency amplificationDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
520101 , Metric OMNI-BLOK Fuse Block Molded Base Type
5203 ,4A SCRsapplications wherethe available gate current is limited, such as motorcontrol for hand tools, kitch ..
521-1 ,Winfield Corporation - 1.8V LVCMOS Surface Mount Crystal Clock Oscillator
52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK126
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)
TOSHIBA
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
3SliCii26
TV TUNER, VHF RF AMPLIFIER APPLICATIONS
3SK126
Unit in mm
TV TUNER VHF MIXER APPLICATIONS
0 Superior Cross Modulation Performance.
0 Low Reverse Transfer Capacitance : Crss=0.03pF (Typ.)
0 Low Noise Figure .. NF=1.4dB (Typ.)
g 1.504215 m
MAXIMUM RATINGS (Ta=25°C) 3‘." "i','.' co' L33
CHARACTERISTIC SYMBOL RATING UNIT ?_j I f: + cl.
'i_ av
Drain-Source Voltage VDS 15 V 5" i'i,
Gate 1-Source Voltage VGlS :9 V E
Gate 2-Source Voltage vas i9 V d
. 1. GATE 1
Drain Current ID 30 mA 2. G ATE 2
Drain Power Dissipation PD 150 mW 3. DRAIN
Chanel Temperature Teh 125 °C 4. SOURCE
Storage Temperature Range Tstg -55--125 "C JEDEC -
EIAJ -
TOSHIBA 2-3J1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.013g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGlSS VDs=0, VGlS= i7V, VGZS=0 - - i50 nA
Gate 2 Leakage Current IGZSS VDs=0, VGIS=0a VGZS= i7V - - 1-50 nA
. VGlS= -4V, Vst= -4V,
Drain-Source Voltage V (BR) DSX In-- 1 0 0,11 A 15 - - V
. IDss - - -
Drain Current (Note) VDS--6V, VGIS=0, VG2S--3V 0 - 6 mA
Gate l-Source Cut-off VDs=6V, VG2s--3V,
-1 - 1
Voltage VGlS (OFF) ID = 100 prA V
Gate 2-Source Cut-off VD326V, VG1323V,
- . - 1
Voltage VG2S (OFF) ID: 100/rA 0 5 V
Forward Transfer VDs=6V, VG23=3V
Admittance lyfsl ID = 10mA, f = lkHz 13 20 - mS
Input Capacitance Ciss VDS=6V, VG2323V - 4.25 5.5 pF
Reverse Transfer Capacitance Crss ID=IOmA, f=1MHz - 0.03 0.05 pF
Power Gain Gps VDs=6V, VG2s--3V 20 25 - dB
Noise Figure NF ID=10mA, f = 200MHz - 1.4 2.8 dB
Note : IDSS Classification 0 : 0--2mA, Y : 1~6mA 961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity enci vulnerability t9 physical stres.s. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
TOSHIBA 3SK126
Marking
Ity' CPD OUTPUT
’" %. RL=5OQ
INPUT m
L1 : 1mm¢ Ag Plated Copper Wire, 2 Turns, 8mm ID
L2 : 1nund Ag Plated Copper Wire, 2.5 Turns, 8mm ID
Fig.1 200MHz Gps, NF TEST CIRCUIT
ID - VDS ID - VDS
I - A COMMON COMMON SOURCE iDSSf4-ZIZA
Dss--0m SOURCE VGIS=3V Dss--0m
G? VG23=3V 2 Ta=25°C
g Ta=25°C g
© © vag=2zv
- 1.5 H
ttt 1 ttt
pt 2 pt
E 1.5 E
g 0.5 g
- - - - 0.5
0 2 4 6 8 IO 12 14 0 2 4 6 8 IO 12 14
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
1998-10-28 2/4
TOSHIBA
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE
Istl (mS)
POWER GAIN Gps (dB)
ID - VG1S
IDSS = 4.2mA
IDSS = 0mA
COMMON
SOURCE
VDS=6V
Ta = 25°C
V 2S--4V
-0.5 o 0.5 1.0 1.5 2.0 2.5
GATE1-SOURCE VOLTAGE les (V)
lstl - ID
- - - IDss=4.2mA VG23=4V
- IDss=0mA
COMMON
SOURCE
VDS = 6V
Ta = 25°C
4 8 12 16 20 24 28
DRAIN CURRENT In (mA)
Gps, NF - ID
----- IDSS = 4.2mA
IDSS = 0mA
COMMON SOURCE
VDs=6V, VG25=3V
f=200MHz, Ta =25°C
4 6 8 10 12 14
DRAIN CURRENT ID (mA)
NOISE FIGURE NF (dB)
FORWARD TRANSFER ADMITTANCE
IstI (m3)
POWER GAIN cps (dB)
POWER GAIN Gps (dB)
3SK126
Istl - VGIS
COMMON
SOURCE VG
VDS=6V
Ta = 25°C 3
- - - - IDSS= 4.2mA
- IDss=0mA
5 0 0.5 1.0 1.5 2.0 2.5 3.0
GATE1-SOURCE VOLTAGE les (V)
Gps, NF - VDs
3 - Gps
COMMON
SOURCE
ID = 10mA
f = 200MHz
Ta = 25°C
----- IDSS = 4.2mA
IDSS = OmA
VG23=3V
2 4 6 8 10 12
DRAIN-SOURCE VOLTAGE VDS (V)
Gps - VG2S
/ --- IDss=4.2mA
I / - IDss=0mA
, VG2s e
I I ttt
vnn--6v(--vns)+200Q(--R)x10ruA
at VG25=3V
f= 200MHz, Ta=25°C
o 1 2 3 4 5 6 7
GATE2-SOURCE VOLTAGE Vats (V)
NOISE FIGURE NF (dB)
1998-10-28 3/4
TOSHIBA
3SK126
Ciss - VGZS
COMMON SOURCE
r: VDs=6V
'3 VGIS: VG2S=3V
it ID=10mA
io'" f=1MHz
Ta=25°C
-4 -2 0 2 4 6
GATEZ-SOURCE VOLTAGE VG2S (V)
Y,.a-f
REVERSE TRANSFER CONDUCTANCE grs (mS)
-0.05 0 0.05 0.1
COMMON SOURCE
f=450MHz VDS:6V
0.04 VG2s=3V
ID = 10mA
Ta = 25''C
RE VERSE TRANSFER SUSCEPTANCE
COMMON SOURCE
VDS=6V
VGgs--3V
ID=10mA
T =2 °
400 a 5 C
OUTPUT SUSCEPTANCE bos (mS)
f= 50MHz
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
OUTPUT CONDUCTANCE gos (mS)
INPUT SUSCEPTANCE bis (mS)
FORWARD TRANSFER SUSCEPTANCE
bfs (mS)
DRAIN POWER DISSIPATION PD (mW)
COMMON SOURCE
VDS = 6V
VG2s = 3V
ID = 10mA
Ta = 25°C
f= 50MHz
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
INPUT CONDUCTANCE gie (mS)
st - f
FORWARD TRANSFER CONDUCTANCE gfs (mS)
00 4 8 12 16 20 24 28
COMMON SOURCE
VDs=6V
-4 VG2s--3V
ID =10mA
Ta=25''C
f = 450MHz
PD - Ta
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
1998-10-28 4/4
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