3N165 ,Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
51065-0500 , 2.00mm (.079") Pitch Micro-Latch™ Wire-to-Board Housing, Friction Lock, 5 Circuits
51281-0894 , 0.50mm (.020") Pitch FFC/FPC Connector, SMT, Right Angle, Non-ZIF, Dual ContactStyle, 1.20mm (.047") Mated Height, 8 Circuits, Lead-free, Gold (Au) Plating
51281-0894 , 0.50mm (.020") Pitch FFC/FPC Connector, SMT, Right Angle, Non-ZIF, Dual ContactStyle, 1.20mm (.047") Mated Height, 8 Circuits, Lead-free, Gold (Au) Plating
51353-1000 , 2.00mm (.079") Pitch MicroClasp™ Wire-to-Board Receptacle Housing, Positive Lock Dual Row, 10 circuits
51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
3N165
