3LN03M ,Switching DeviceMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSS ..
3LN03SS ,Switching DeviceAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C-TB-E , General-Purpose Switching Device Applications
3LP01M ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01M-TL-E , General-Purpose Switching Device Applications
5103308-7 , HEADER ASSY, VERTICAL, LOW PROFILE, AMP-LATCH
5103309-1 , HEADER ASSY, VERTICAL, LOW PROFILE, AMP-LATCH
5-104071-1 , HEADER ASSEMBLY,VERTICAL,SINGLE ROW
51065-0500 , 2.00mm (.079") Pitch Micro-Latch™ Wire-to-Board Housing, Friction Lock, 5 Circuits
51281-0894 , 0.50mm (.020") Pitch FFC/FPC Connector, SMT, Right Angle, Non-ZIF, Dual ContactStyle, 1.20mm (.047") Mated Height, 8 Circuits, Lead-free, Gold (Au) Plating
51281-0894 , 0.50mm (.020") Pitch FFC/FPC Connector, SMT, Right Angle, Non-ZIF, Dual ContactStyle, 1.20mm (.047") Mated Height, 8 Circuits, Lead-free, Gold (Au) Plating
3LN03M
Switching Device
Features Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°CMarking : YG Continued on next page.
3LN03MN-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
