36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB160A ,1600V Bridge in a D-34A packageBulletin I27177 03/03MB High Voltage SERIESSINGLE PHASE BRIDGE Power Modules
36MT100 ,1000V 3 Phase Bridge in a D-63 packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MT160 ,1600V 3 Phase Bridge in a D-63 packageapplications.Major Ratings and Characteristics Parameters 26MT 36MT UnitsI 25 35 AO@ T 70 60 °CCI @ ..
36MT20 ,200V 3 Phase Bridge in a D-63 packageapplications.Major Ratings and Characteristics Parameters 26MT 36MT UnitsI 25 35 AO@ T 70 60 °CCI @ ..
36MT60 ,600V 3 Phase Bridge in a D-63 packageBulletin I2771 rev. E 04/03MT SERIESTHREE PHASE BRIDGE Power Modules
4A12P-1AH-12R5LF , Surge Line Protection Module
4AC12 , Silicon NPN Epitaxial
4AC12 , Silicon NPN Epitaxial
4AC14 , Silicon NPN Triple Diffused
4AC14 , Silicon NPN Triple Diffused
4AC22 , Power Transistor Arrays
36MB140A-36MB160A
1400V Bridge in a D-34A package
International
Tiait, Rectifier
Bulletin 127177 03/03
MB High Voltage SERIES
SINGLE PHASE BRIDGE
Features
El Universal, 3 way terminals:
push-on, wrap around or solder
El High thermal conductivity package,
electrically insulated case
III Center hole fixing
El Excellent power/volume ratio
a UL E 62320 approved E
El Nickel plated terminals solderable as per MIL-STD-202 Method
208; solder: Sn/Pb (60/40); solder temperature: 235-260°C
max. time: 8-10 secs
Description
Power Modules
A range of extremely compact, encapsulated
single phase bridge rectifiers offering efficient and
reliable operation. They are intended for use in
general purpose and instrumentation applica-
tions.
Major Ratings and Characteristics
Parameters 26MB-A 36M B-A Units
IO 25 35 A
@ TC 70 55 oC
IFSM @50Hz 400 475 A
@ 60Hz 420 500 A
Pt @ 50Hz 790 1130 A25
@ 60Hz 725 1030 A25
VRRM range 1400 to 1600 V
T J - 55 to 150 "C
1
MB High Voltage Series
International
Bulletin 127177 03/03 TOR Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM , maximum repetitive VRSM , maximum non- I RRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ T J max.
26MB..A 140 1400 1500 2
36MB..A 160 1600 1700
Forward Conduction
Parameters 26MB-A 36MB-A Units Conditions
IO Maximum DC output current 25 35 A Resistive or inductive load
20 28 A Capacitive load
@ Casetemperature 65 60 T
|FSM Maximum peak, one-cycle 400 475 A t=10ms No voltage
non-repetitive forward current 420 500 t= 8.3ms reapplied
335 400 t=10ms 100% vRRM
350 420 t=8.3ms reapplied lnitialTo=Tomax.
Pt Maximum Pt forfusing 790 1130 A25 t=10ms No voltage
725 1030 t= 82ms reapplied
560 800 t=10ms 100% va,,
512 730 t= 8.3ms reapplied
Wt Maximum INtforfusing 5.6 11.3 KANs Ptfortimetx= thVtx;
0.1 Sth10ms,VRRM=0V
VWO)1 Low-level ofthreshold voltage 0.70 0.74 V (16"oxn%Av)
VF(TO)2 High-level of threshold voltage 0.75 0.79 (I > "XIF(AV))1@ T Jmax.
rt, Low-levelforward sloperesistance 7.0 5.5 mo (16.7%xnxlF(Av)<|rt2 High-level forward slope resistance 6.4 5.2 (I > "XIF(AV))1@ T Jmax.
Vo, Maximum forward voltage drop 1.25 1.3 V T,-- 25 "C, IFM = 40APK (26MB) tp= 400gs
TJ=25°C, In,-- 55APK(36MB)
IRRM Max. DC reverse current 10 10 11A T,--25"C, perdiode atvRRM
VINS RMS isolation voltage base plate 2700 2700 V f = 50 Hz,t=1s
Thermal and Mechanical Specifications
Parameters 26MB-A 36MB-A Units Conditions
T J Junction temperature range -55to 150 oC
Tsig Storage temperature range - 55 to 1 50 oC
Rch Max.thermalresistancejunctionto case 1.7 1.35 KIW Per bridge
Recs Max. thermal resistance, case to heatsink 0.2 KIW Mounting surface , smooth, tlatand greased
wt Approximate weight 20 g
T Mounting Torq ue f, 10% 2.0 Nm Bridge to heatsink
