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31DQ03N/a87avai30V 3.3A Schottky Discrete Diode in a DO-201AD package
31DQ04JAPANN/a710avai40V 3.3A Schottky Discrete Diode in a DO-201AD package


31DQ04 ,40V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ05 ,50V 3.3A Schottky Discrete Diode in a DO-201AD packageBulletin PD-2.305 rev. E 03/0331DQ0531DQ06SCHOTTKY RECTIFIER3.3 AmpMajor Ratings and Characte ..
31DQ05 ,50V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ05-TR ,50V 3.3A Schottky Discrete Diode in a DO-201AD packageBulletin PD-2.305 rev. E 03/0331DQ0531DQ06SCHOTTKY RECTIFIER3.3 AmpMajor Ratings and Characte ..
31DQ06 ,60V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
31DQ06TR ,60V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
420 ,NPN Silicon RF TransistorSTART420NPN Silicon RF Transistor• LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V• COMPRESSION ..
42094-005 , POSITIVE HIGH TEMPERATURE REGULATOR
42094-012 , POSITIVE HIGH TEMPERATURE REGULATOR
42094-015 , POSITIVE HIGH TEMPERATURE REGULATOR
42094-024 , POSITIVE HIGH TEMPERATURE REGULATOR
42095-005 , NEGATIVE HIGH TEMPERATURE REGULATOR


31DQ03-31DQ04
30V 3.3A Schottky Discrete Diode in a DO-201AD package
International
ISZR Rectifier
Bulletin PD-2.304 rev.E 03/03
31 D003
31 DQO4
SCHOTTKYRECTlFIER
Major Ratings and Characteristics
Characteristics 31 DQ.. Units
IHAV) Rectangular 3.3 A
waveform
VRRM 30/40 V
|FSM @tp= 5 pssine 450 A
VF @3Apk,TJ=25°C 0.57 V
T., -40to150 ''C
3.3Amp
Description/Features
The 31DQ.. axial leaded Schottky rectifier has been opti-
mized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power sup-
plies, converters, free-wheeling diodes, and reverse
battery protection.
. Low profile, axial leaded outline
a High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
5.8 (0.23)
MAX. 01A.
21.0 (0.83) MIN.
(2 PLCS.)
10.0 (0.39)
CATHODE two
" 0 (0.83) MIN.
(2 PLCS.)
10.0 (0.39)
2 54 (01(1)) MAX.
FLASH (2 PLCS.)
M0 (0.059! DIA u L
1.30 (0.051) T
c 5.8(023)
1 50 (o 059) W DIA.
FTE-lr-ri-CHM.
1.30 (0.051)
(2 PLCS.) Outline C - 16
Dimensions in millimeters and inches
1
31DQ03, 31DQ04 International
Bulletin PD-2.304 rev.E 03/03 TOR Rectifier
Voltage Ratings
Part number 31 D003 31 D004
VR Max. DC Reverse Voltage (V) 30 40
a,,,, Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 31 DQ.. Units Conditions
Iron Max. Average Forward Current 3.3 A 50% duty cycle @ TC = 73°C, rectangularwave form
* See Fig. 4
IFSM Max.PeakOneCydeNon-Repetitive 450 5ps Sine or3ps Rect. pulse Following _any rated .
. A . load coiditioh and with
Surge Current * See Fig. 6 90 10ms Sine or 6ms Rect. pulse rated vRRM applied
EAS Non-Repetitive Avalanche Energy 6.0 mJ T: = 25 "C, IAS = 1.0Amps, L = 12 mH
I AR Repetitive Avalanche Current 1.0 A Currentdecaying linearlyto zero in 1 usec
Frequencylimited by T, m:ax.VA=1.5xVR typical
Electrical Specifications
Parameters 31 DQ.. Units Conditions
Vo, Max. Forward Voltage Drop 0.57 V @ 3A T = 25 "C
* See Fig. 1 (1) 0.71 v @ 6A J
0.51 V @ 3A a
0.62 v @6A T, = 125 C
|RM Max. Reverse Leakage Current 1 mA T J = 25 'C V -
* . o R - rated VR
See Fig. 2 (1) 20 mA T, = 125 C
c, Typical Junction Capacitance 190 pF v,, = 5Voc (test signal range 100Khz to 1Mhz) 25''C
LS Typical Series Inductance 9.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 31 DQ.. Units Conditions
T J Max. Junction Temperature Range (*) -40 to 150 "C
Tstg Max. Storage Temperature Range -40 to 150 "C
RWA Max. Thermal Resistance Junction 80 "C/W DC operation
to Ambient Wlthout cooling fins
Re,, Typical Thermal Resistance Junction 34 "CA/V With fln 20x20 (0.79x0.79)1.0(0.04)thick.
to Lead Dimensions in millimeters (inches)
wt Approximate Weight 1.2 (0.042) g (02.)
Case Style C - 16
(*) dPtot 1 . . . . .
.-.... < . thermal runaway condition fora diode on its own heatsink
dT] Rth(j-a)
2
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