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30WQ03FN-30WQ03FNTR-30WQ03FNTRL-30WQ03FNTRR
30V 3.5A Schottky Discrete Diode in a D-Pak package
I912 Rectifier
SCHOTTKYRECTlFlER
Bulletin PD-20559 rev.E 03/03
ternational
30WQ03FN
3.5Amp
D-Pak (TO-252AA)
Major Ratings and Characteristics Description/ Features
. . . The 30WQ03FN surface mount Schottky rectifier has been
Characteristics 30WQ03FN Units designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
IF(AV) Rectangular 3.5 A drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 30 V . Popular D-PAK outline
I Small foot print, surface mountable
IFSM @tp= 5 HS sme 535 A . Low forward voltage drop
. High frequency operation
VF @3Apk,To=125 C 0.35 V . Guard ring for enhanced ruggedness and long term
reliability
T,, range -40 to 150 "C
2.38 (0.09) -
6.73 0.26
( ) 2.19 (0.08) - 1.14 (0.04) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.89 (0.03)
- 5-46_(0-21) _ 1.27 (0.05) _ 0.58 (0.02) 5.97 (0.24)
l 5.21 (0.20%: 0.88 (0.03) 0.46 (0.02)
6.45 (0.24)
6.22 (th24) 5.68 (0.22) 6.48 (0.26)
Ii4t0._02 5.97 (0.23) 10.420141) 10.67 (0.42)
l 9.4c (0.37) -
0.51 (0.02) 2 [
1_2(0-06) - g MIN. 2.54 ((0.10)[ III -
1.15 (0.04) 1 I
3 0.89 (0.03) -d2-28-(th09 2.28(0.09)
2x1‘14(°‘°4) e xm) ‘_o.53 (0.02) 1.65 (0.06) 2x
0.76 (0.03) 0.46 (0.02) 2x Base
1 - Anode
2.28 (0.09 2 _ Cathode Cathode
2x 3 - Anode l 4, 2
4.57 (0.18) 4 - Cathode
Conform to JEDEC outline D-Pak (Similar to TO-252AA) i
Dimensions in millimeters and (inches) 1 3
Anode Anode
1
30WQ03FN
Bulletin PD-20559 rev.E 03103
International
IEER Rectifier
Voltage Ratings
Part number 30WQO3FN
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Absolute Maximum Ratings
Parameters 30WQ... Units Conditions
IHAV) Max. Average Forward Current 3.5 A 50% duty cycle @ To = 134°C, rectangularwave form
* See Fig. 5
|FSM Max. PeakOneCydeNon-Repetitive 535 5ps Sine or 3ps Rect. pulse Following .lny rated .
. A .— load condition and with
Surge Current * See Fig. 7 90 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 8 mJ T, = 25 "C, |AS = 2 Amps, L = 4 mH
I AR Repetitive Avalanche Current 1.0 A Currentdecaying Iinearlyto zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 30WQ... Units Conditions
Vo, Max. Forward Voltage Drop 0.45 V @ 3A T - 25 "C
* See Fig. 1 (1) 0.52 V © 6A J
0.35 V @ 3A T, =125 ''C
0.46 V @ 6A
IR,, Max. Reverse Leakage Current 2 mA T J = 25 "C
. v,, = rated VR
*See Fig.2 (1) 50 mA To-- 125°C
Wray Threshold Voltage 0.22 V T J = T J max.
rt Forward Slope Resistance 32.86 mn
c, Typical Junction Capacitance 290 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 ''C
LS Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse l/With < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 30WQ... Units Conditions
T J MatJunctionTemperature Range(*) Moto 150 "C
Tstg Max. Storage Temperature Range -40 to 150 ''C
Rch Max.ThennalResistanceJunction 4.7 "C/W DC operation *See Fig.4
to Case
wt Approximate Weight 0.3(0.01) g (02.)
Case Style D- PAK Similarto TO-252AA
(') dPtot 1 . . . . .
. < . thermal runaway condition for a diode on its own heatsink
dT] Rth(j-a)
