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30CTH03
300V 30A HyperFast Discrete Diode in a TO-220AB package
International
152R Rectifier
Bulletin PD-20770 rev.A 08/03
3OCTH03
Hyperfast Rectifier
Featu res
. Hyperfast Recovery Time
. Low Forward Voltage Drop
. Low Leakage Current
. 175°C Operating Junction Temperature
Description) Applications
trr = 36ns max.
|F(AV) = 30Amp
VR = 300V
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
TO-220AB
Parameters Max Units
VRRM Peak Repetitive Reverse Voltage 300 V
IHAV) Average Redified Forward Current @ To = 153''C Per Diode 15 A
Per Device 30
IFSM Non Repetitive Peak Surge Current @ T, = 25°C 150
T J, TSTG Operating Junction and Storage Temperatures - 65 to 175 "C
Case Styles
30CTH03
Common
Cathode
I Common 3
Anode Calnode Anode
3OCTH03
Bulletin PD-20770 rev.A 08/03
International
TOR Rectifier
Electrical Characteristics (ti) Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 300 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - 1.0 1.25 IF = 15A, TJ = 25°C
- 0.85 0.95 IF = 15A, TJ = 125°C
IR Reverse Leakage Current - - 40 pA VR = VR Rated
- 8 200 pA To = 125°C, I/e = VR Rated
CT Junction Capacitance - 38 - pF VR = 300V
Ls Series Inductance - 8 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics © Tc = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - - 36 ns IF = 1A, diF/dt = 50A/ps, VR = 30V
- - 30 IF = 1A, diF/dt = 100A/ps, VR = 30V
- 33 - T J = 25''C
- 48 - T: = 125''C
IF = 15A
IRRM Peak Recovery Current - 2.8 - A To = 25''C
diF/dt = 200Alps
- 6.5 - To = 125°C
VR = 200V
Qrr Reverse Recovery Charge - 46 - nC To = 25°C
- 160 - To = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T J Max. Junction Temperature Range - - 175 ''C
Tso Max. Storage Temperature Range - 65 - 175
Rvuc Thermal Resistance, Junction to Case Per Diode - - 1.4 "C/W
2
