30BQ100TR ,100V 3A Schottky Discrete Diode in a SMC packageBulletin PD-2.441 rev. F 05/0230BQ100SCHOTTKY RECTIFIER 3 AmpSMCMajor Ratings and Characteris ..
30C01M ,Pico-TR SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30C02CH ,Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30CPF02 ,200V Fast Recovery Diode in a TO-247AC packageBulletin I2118 rev. B 07/97QUIETIR Series30EPF.. 30CPF..FAST SOFT RECOVERYV < 1.2V @ 10ARECTIFI ..
30CPF06 ,600V Fast Recovery Diode in a TO-247AC packageapplications are:Output rectification and freewheeling ininverters, choppers and convertersand inpu ..
30CPF10 ,1000V Fast Recovery Diode in a TO-247AC packagePreliminary Data Sheet I2138 09/97QUIETIR Series30EPF.. 30CPF.. HVFAST SOFT RECOVERYV < 1.41V @ ..
4093B ,Quadruple 2-input NAND Schmitt trigger
40CPQ035 ,35V 40A Schottky Common Cathode Diode in a TO-247AC packageBulletin PD-2.307 rev. B 12/0140CPQ03540CPQ04040CPQ045SCHOTTKY RECTIFIER40 AmpMajor Ratings a ..
40CPQ040 ,40V 40A Schottky Common Cathode Diode in a TO-247AC packageapplications are inF(AV)switching power supplies, converters, free-wheeling diodes,waveformand reve ..
40CPQ045 ,45V 40A Schottky Common Cathode Diode in a TO-247AC packageFeaturesThe 40CPQ... center tap Schottky rectifier has been optimizedCharacteristics 40CPQ... Units ..
40CPQ045PBF , Schottky Rectifier, 2 x 20 A
40CPQ045PBF , Schottky Rectifier, 2 x 20 A
30BQ100-30BQ100TR
100V 3A Schottky Discrete Diode in a SMC package
International
ISER Rectifier
Bulletin PD-2.441 rev.F 05/02
30BQ100
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Description/Features
The 3OBQ100 surface-mount Schottky rectifier has been
Characteristics 3030100 Units es/grrd.forap.lifa.tions.reqyiriryl.owfoya dropan0 small
foot prints on PC boards. Typical applications are In disk
|F(AV) Rectangular 3.0 A drives, switching power supplies, converters, free-vyheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 100 V . Small foot print, surface mountable
. Very low forward voltage drop
IFSM @tp=5ps sine 2100 A . High freguency operation
. Guard ring for enhanced ruggedness and long term
0 reliability
VF @3.0Apk,TJ=125 C 0.62 V
T., range - 55 to 175 "C
Device Marking: IR3J
2.75 (.108) 5.59 (.220)
3.15 (.124) 6.22 (.245) CATHODE ANODE
6.60 (.260)
7.11 (.280) I G) Ci) j
_ f3: {€322
2.00 (.079) x G) POLARITY Ci) PART NUMBER
2.62 .103 LJ;
( Lg _ J 102 ( 004)
0.76 (.030) "r'_j-
.203 (.008)
1.52 (.060) 7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
1
3OBQ100
Bulletin PD-2.441 rev.F 05/02
International
IEER Rectifier
Voltage Ratings
Part number
30BQ100
R Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters SOBQ Units Conditions
IFW) Max.Average Forward Current 3.0 A 50% duty cycle@TL= 148''C, rectangular waveform
4.0 50% duty cycle@TL= 138°C, rectangular waveform
|FSM Max.PeakOneCycleNon-Repetitive 2100 A Sus Sineor3psRect.pulse Following any rated
load condition and
SurgeCurrent 100 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy 5 m] T, = 25 "C, IAS-- 2.8A,L=10mH
I AR Repetitive Avalanche Current 0.3 A Current decaying linearlytozero in 1 psec
Frequency limited by T, max. Va =15er typical
Electrical Specifications
Parameters 3080 Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.79 V @ 3A T, = 25 "C
0.90 V @ GA
0.62 V @ 3A T, = 125 "C
0.70 V @ 6A
Ira, Max. Reverse Leakage Current (1) 0.5 mA T: = 25 'C v,, = rated VR
5.0 mA T J = 125 "C
c, Max. Junction Capacitance 115 pF VR = 5Voc (test signal range 100KHz to 1Mhz) 25°C
Ls Typical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse 1Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical SpetyTcations
Parameters 30BQ Units Conditions
T, Max.JunctionTemperatureRange(*) -55to175 ''C
Tsta Max. Storage Temperature Range -55 to 175 "C
RthJL Max. Thermal Resistance 12 "CIW DC operation
Junction to Lead (**)
fu, Max.Thermal Resistance 46 "CA/V DC operation
Junction to Ambient
wt Approximate Weight 0.24(0.008) g(oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR3J
(*) dPtot < 1
de Rth(j-a)
(") Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink
