30BQ040TR ,40V 3A Schottky Discrete Diode in a SMC packageFeaturesThe 30BQ040 surface-mount Schottky rectifier has been de-Characteristics 30BQ040 Unitssigne ..
30BQ040TRPBF ,SCHOTTKY RECTIFIERFeaturesThe 30BQ040 surface-mount Schottky rectifier has been de-Characteristics 30BQ040 Unitssigne ..
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30BQ060PBF , Schottky Rectifier, 3.0 A
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40CPQ035 ,35V 40A Schottky Common Cathode Diode in a TO-247AC packageBulletin PD-2.307 rev. B 12/0140CPQ03540CPQ04040CPQ045SCHOTTKY RECTIFIER40 AmpMajor Ratings a ..
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30BQ040-30BQ040TR
40V 3A Schottky Discrete Diode in a SMC package
International
152R Rectifier
Bulletin PD-2.439 rev.F 03/03
3OBQO4O
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Cie-i)
Description! Features
. . . The 3OBQ040 surface-mount Schottky rectifer has been de-
Characteristics 3080040 Units signed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
'F(Av) Rectangular 3.0 A switching power supplies, converters, free-wheeling diodes,
waveform battery charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
. Very low forward voltage drop
IFSM @tp=5US sine 2000 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @3.0Apk,TJ= 125''C 0.43 V reliability
TJ range - 55 to 150 "C
Device Marking: IR3F '
2.75 (.108) 5.59 (.220)
3.15 (.124) 6.22 (.245) CATHODE ANODE
6.60 (.260)
7.11 (.280) i, C) Ci)
_ f3: $332
2.00 (.079) CO POLARITY G) PART NUMBER
( Lgfl 102 ( 004)
0.76 (.030) :"'i_j- . .
.203 (.008)
1.52 (.060) 7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
1
3OBQO40
Bulletin PD-2.439 rev.F 03/03
International
IEER Rectifier
Voltage Ratings
Part number
30BQO4O
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters SOBQ Units Conditions
IFW) Max.Average Forward Current 3.0 A 50% duty cycle@TL=118°C,rectangular waveform
4.0 50% duty cycle@TL= 110°C, rectangular wave form
|FSM Max.PeakOneCycle Non-Repetitive 2000 A 5ps Sineor3ps Rectpulse Following any rated
load condition and
Surge Current 110 10ms Sine or ems Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy 6.0 mJ TJ=25°C,IAS=1.0A,L=12mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 psec
Frequencylimited byT, max.Va=1.5xVr typical
Electrical Specifications
Parameters 30BQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.53 V @ 3A T, = 25 °C
0.68 V @ GA
0.43 V @ 3A T, = 125 "C
0.57 V @ 6A
|RM Max. Reverse Leakage Current (1) 0.5 mA T J = 25 "C v,, = rated v,,
30 mA T J = 125 "C
c, Max. Junction Capacitance 230 pF VR = 5VDc (test signal range 100KHz to 1Mhz) 25''C
Ls Typical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse Wdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 30BQ Units Conditions
T J Max. Junction Temperature Range (*) -55 to 150 'C
Tstg Max.Storage Temperature Range -55 to150 ''C
RthJL Max. Thermal Resistance 12 "CIW DC operation
Junction to Lead (**)
RthJA Max.Thermal Resistance 46 "CAN DC operation
Junction to Ambient
wt Approximate Weight 0.24 (0.008) g (oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR3F
(*) dPtot < 1
de Rth(j-a)
C') Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink
