2W02G ,Bridge Rectifiers
2W04G ,Bridge Rectifiers
2W10G ,Bridge Rectifiers28-Feb-02 12W005G THRU 2W10GVishay Semiconductorsformerly General SemiconductorRatings and Characte ..
2Z24 ,ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULA ..
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3.0SMCJ24A-13 , 3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
3SK126 ,N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo0 Superior Cross Modulation Performance.l9i021900 Low Reverse Transfer Capac ..
3SK127 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo. Superior Cross Modulation Performance.. Low Reverse Transfer Capacitance : ..
3SK131 ,MOS FIELD EFFECT TRANSISTORDATA SHEETDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK131RF AMP. FOR VHF TV TUNERN-CHANNEL S ..
3SK135A ,RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLDDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
3SK135A-T1 ,For UHF TV tuner high frequency amplificationDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
3SK135A-T2 ,For UHF TV tuner high frequency amplificationDATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL- ..
2W02G
Bridge Rectifiers
2W005G - 2W10G 2W005G - 2W10G Features • Glass passivated junction. • Ideal for printed circuit board. • Reliable low cost construction technique results in inexpensive product. • High surge current capability. ~ - ~ • UL certified, UL #E96005. + WOB Bridge Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 005G 01G 02G 04G 06G 08G 10G V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V RMS V DC Reverse Voltage (Rated V) 50 100 200 400 600 800 1000 V R R I Average Rectified Forward Current, @ T = 50°C 2.0 A F(AV) A I Non-repetitive Peak Forward Surge Current FSM 60 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 3.13 W D R Thermal Resistance, Junction to Ambient,* per 40 C/W ° θJA leg Thermal Resistance, Junction to Lead,* per leg 15 R °C/W θJL *Device mounted on PCB with 0.375" (9.5 mm) lead length. Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units V Forward Voltage, per bridge @ 2.0 A 1.1 V F I Reverse Current, per leg @ rated V R R 5.0 μA T = 25 C ° A 500 μA T = 125°C A 2 2 I t rating for fusing t < 8.3 ms 10 A s C Total Capacitance, per leg T 19 pF V = 4.0 V, f = 1.0 MHz R 2001 2W005G -2W10G, Rev. C
