2SK880 ,Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier ApplicationsApplications Unit: mm High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High brea ..
2SK880-GR , Audio Frequency Low Noise Amplifier Applications
2SK881 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admit ..
2SK882 ,Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Low reverse transfer capacitance: C = 0.025 pF (typ.) rss Low noise fi ..
2SK890 ,2SK890
2SK890 ,2SK890
3P4J ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4J-Z ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4MH ,3A mold SCRfeatures a small and lightweight package andis easy to handle even on the mounting surface due to i ..
3SJ11A , 3SJ11A
3SK126 ,N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo0 Superior Cross Modulation Performance.l9i021900 Low Reverse Transfer Capac ..
3SK127 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)APPLICATIONSDOJNE.ef-lo. Superior Cross Modulation Performance.. Low Reverse Transfer Capacitance : ..
2SK880
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK880 Audio Frequency Low Noise Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ High input impedance: IGSS = −1 nA (max) at VGS = −30 V Small package
Maximum Ratings (Ta ��� � 25°C)
Marking
Electrical Characteristics (Ta ��� � 25°C)
NF (1) VDS � 10 V, RG � 1 k��
ID � 0.5 mA, f � 1 kHz
Unit: mm
Weight: 0.006 g (typ.)
