2SK831 ,MOS FIELD EFFECT TRANSISTOR6427525 N E C ELECTRONICS INC 980 19009 D 7’v5gJ/3
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2SK833 ,Fast switching N-channel silicon MOS field effect power transistor."T""'"""" --.o ,1.“
ELECTRON DEVICE
33 DE EH27525
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2SK856 ,2SK856
2SK856 ,2SK856
2SK880 ,Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier ApplicationsApplications Unit: mm High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High brea ..
2SK880-GR , Audio Frequency Low Noise Amplifier Applications
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4J-Z ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4MH ,3A mold SCRfeatures a small and lightweight package andis easy to handle even on the mounting surface due to i ..
3SJ11A , 3SJ11A
2SK831
