2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures
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IosMAx 1.tMA.X " Suitable for switching pouer suppIIes,
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2SK819 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET6427525 N E c ELECTRONICS INC 980 18986 D 7237.3
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2SK825 ,FAST SWITCHING N-CHANNEL SILICON POWER MOSFET=15 DE Iguanas ClirldhnT? D r
6427525 N E C ELECTRONICS INC 980 13997
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2SK831 ,MOS FIELD EFFECT TRANSISTOR6427525 N E C ELECTRONICS INC 980 19009 D 7’v5gJ/3
=16 DEI EHE75E5 ClClhnrlly'] l r
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2SK833 ,Fast switching N-channel silicon MOS field effect power transistor."T""'"""" --.o ,1.“
ELECTRON DEVICE
33 DE EH27525
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2SK856 ,2SK856
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4J-Z ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4MH ,3A mold SCRfeatures a small and lightweight package andis easy to handle even on the mounting surface due to i ..
2SK817
