2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC
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2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr
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2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374!
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2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures
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2SK819 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET6427525 N E c ELECTRONICS INC 980 18986 D 7237.3
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3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
3P4J ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
3P4J-Z ,3A mold thyristorFEATURES
5% Small and Surface Mount package.
@ High junction temperature provides free applicatio ..
2SK808
