2SK798 ,N CHANNEL MOS FIELD POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
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2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG--
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2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC
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2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr
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2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374!
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3N164 ,P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N165 ,Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N201 ,DUAL GATE MOSFET VHF AMPLIFIERELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)L Characteristic Symbol Mln Typ Max U ..
3N204 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (TA = 26''C unless otherwise noted.)E Characteristic Symbol Min Max Unit ..
3N205 ,Silicon dual insulated-gate field-effect transistor.ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)Charagteristh Symbol " Mi ..
2SK798
