2SK794 ,2SK794
2SK794 ,2SK794
2SK796 ,Silicon N-channel Power F-MOS FET
2SK798 ,N CHANNEL MOS FIELD POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
. Low RDS(on)
O No Secondary Breakdown
ABSOLUTE MA ..
2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG--
"37 3
6427525 N E C ELECTRONICS INC 930 18958 D Fr
N E c ELECTRONICS INC =13 DEIg ..
2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N164 ,P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N165 ,Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2SK794
2SK794
iylryNirtiie)bMtNyBtitlh%WscT7vi,iif7S
o MiE8MtiEAdviFVAm a'giEratfff
o A4vry_'ab-3r $1111"!!!
0 t-3rF'5.fym min
. EWETj} V(BR)DSS=900V
. mfrfgiiiitrF'ijryii,
'st|=1-7S ($13) (ID=3A) 8
. alttRtttiio IGss=i100nA (ttkt/ar---) m
1Dss--300stA(EA)(vDs--900V) 3°:
. mmcwxmarx. Iwwzxv Frfyt-%, 3
qAett (Ta=--25''C)
E E fe a 5it 1% 'tttt ' ti
F'vrmd.v.y-7lillttlE Vsz 900 v j:
(r' _ F y - 7 HERE Voss £20 V .
D 2. Fi4v(titpttti)
c I 5 ._
F v4 y'tlth'. D A 3. / 7
" 11/ 7 LDP 10 JEDEC -
tt g th' A(rc=25ty) PD 150 w EIAJ sc-es
' ' y i, w a IE Tch 150 T) A E 2-16CIB
(X tr E IE Tstg -55-- 150 "C
$tSitWftt!k (Ta=25°C)
IE 3 te fy an 5tt ' ft Atl mm " am:
Y'' - F g n tit h. lass VGs=i20V, VDS=0 - - t100 nA
F V 4 V M m lit m IDSS VD3=900V, VGS=0 - - 300 "
l~'v4 V . y -7 Nlt8ttXtfE V(BR)Dss ID=10mA, vas=0 900 - _ v
'f - F L t In a E IE Irth vDs=10v, ID=1mA L5 - 3.5 v
E li m titQ J" F' i ' y A ?stl vDs=1ov, ID=3A L0 L7 - S
FV/f V . 'y--7l'slld 'wtlftit RDS(ON) ID=3A, vas---10V - 2.1 25 n
b’v4 p. v-AMW:' VDs(0N) ID=5A, VGs=10Y - 11 13
A A E I Ciss VDs=25V, vas=0, f=IMHx - 1400 1900 pF
w R tr I Crss vDs=25v, sz=0, {=1MHz - 110 200 pF
m h E I coss vDs=25v, VGS=0, f--IMH' - 190 300 pF
ID=3A -
l " gt M tr Trt AA T, " 110 220
Z47;,, Jr-:/dvetM ton 0 a q 3 - no 260
10ps 8 u: ns
gt H T g g M tf .5 - 90 260
msmmagm VDDTZOOV
'-:/tC?s8M toff Ah: tr,tie5ns(zout=50tu) - 480 900
: oM/dptuosWdt_CBttnxotmc 'ttrtltntt ttiti.tt t td a»,
TOSHIBA
www.ic-phoenix.com
.