2SK788 ,FIELD EFFECT TRANSISTORFEATURES:. Low orain-siource ON Resistance t RDS(ON)= 0,389 (Typ.). High Forward Transfer Admittanc ..
2SK792 ,2SK792
2SK794 ,2SK794
2SK794 ,2SK794
2SK796 ,Silicon N-channel Power F-MOS FET
2SK798 ,N CHANNEL MOS FIELD POWER TRANSISTORFEATURES 0 4 V Gate Drive - Logic level -
. Low RDS(on)
O No Secondary Breakdown
ABSOLUTE MA ..
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N108 ,Conductor Products, Inc. - NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
3N164 ,P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N165 ,Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N172 , Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2SK788
FIELD EFFECT TRANSISTOR
TOSHIBA fl)TSCeETE/0PT(yy cin os:liruscr7asio UDLEWIS L. lf
HIBA tDiscRETE/OtsToy 990 16745 D-T-Tr-lil
9097250 TOS TOSHIBA FIELD EFFECT TRANSISTOR
SEMICONDUCTOR 2 S K 7 8 8
OSHIBA SILICON N CHANNEL HOS n E
T TECHNICAL DATA 1ft-MDSer P
INDUSTRIAL APPLICATIONS
Unit in mm
159m. 9132102
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
CHOPPER REGULATOR, DC-OC CONVERTER AND MOTOR "
DRIVE APPLICATIONS. N 4 /t) A u
ir/ \_. t'2
. "ts ' :1
3 ‘3 - 3
FEATURES: 3 ' , 3 E! N
. Low Brain-Source ON Resistance t Rosttm)" 0.389 (Typ.) '. E l n
. High Forward Transfer Admittance t lytslests.os (Typ.) 2.0:htils 's,';
. Low Leakage Current t IcssaloonA (Max.) f? vara201l 1.otlli'ss g
IDSS=300nA (Mex.) if vnsusoov M51412 5451412 -
. Enhancement-Node ' Vth-2.0N4.0S i? VDs=10V;Ip=lmA . gg
g 'l , .
, cs - " 1 cyl
-...--- --2--aa_ ,
1. GATE
MAXIMUM RATINGS (Ta=25°C) 2 DRAIN (HEAT 918K)
th SOURCE
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSX 500 ll JEDEO -
EIAJ -
. - ll -
Drain Gate oltage (Rss_zokn) VDGR 500 ll TOSHIBA 'a-ttttOB
Gate-Source Voltage VGSS t20 ll Height t 4.6g
DC I 13
Drain Current D A
Pulse Ipp 52
Drain Power Dissipation
(Tc=25''C) PD 150 w
Channel Temperature Tch 150 "c
Storage Temperature Range Tstg -55nd50 "C
THERMAL. CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 0.83 °C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 50 "C/il
Muximum Lead Temperature for Soldering TL 300 "c
Purposes (1.6mm from case for 10 seconds) .
- ll 4 -
TDBHIBA CORPORATION
TOSHIBA 4H)TSCe0'E/()PT01. '3''i DEDWTWESD UULEWIE. a [f
dosmtso TOSHIBA tDrSCRETEfOPT0) 990 16746 DT-YT-IB l
SEMICONDUCTOR
2 s I 7 8 B
TOSHIBA TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current "' Tcss ycs--e.20W,saos=ov - - 1100 M
Drain Cut-off Current riks - vos--5aw,%sruw - - 300 uA
19rtdn-Source Breakdown Voltage vorsass ID=10mA ' qap--0ll 500 - - ll
Gate Threshold Voltage Vth VD3=10V, ID=1mA 2.0 - Z..0 ll
Forward Transfer Admittance [stl vDS=1ov. ID=7A 6.0 8.0 - S
Drain-Source ON Resistance Rpswn) In=7A ' VGs=10V - 0.38 0.50 n
Input Capacitance Clss - 2300 3600
Reverse Transfer Capacitance Crss Vps=10V, VGs=0V, f=1MHz ... 570 680 pF
Output Capacitance Coss - 1000 1400
Rise Time tr 1 =7h - 70 140
Turn-on Time ton T VIN ct VOUT - 100 200
Sviching Time Fall Time tf 18:5 ' m - 75 150 ns
Turn-off Time toff i1?/tly'tsiit"5ir'' 1ltmk- 21011 - 350 700
T?ht,tt'u?t'f/r'g,'hhrttrs', Gate-Drain) h ID=15A ' VGS=10V - 87 110
t?tste-Source Charge . Qgs VDD';400V - 35 - nC
Gate-Drain ("Miller") Charge the - 52 -
S00RCE-.0Rh1tl DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Cmtinuous Drain Reverse Oman: IDR - - ... 13
Rulse Drain Reverse Current Timp - - - 52 A
Diode Foward Voltage VDSF IDR=13A ,Vcs=0V - - 1.9
Reverse Recovery Time trr IDR=13A - 400 - ns
Reverse Recovered Charge er dIDR/dt=100A/us - 4.0 - pC
- I 15 -
01mm . - - _ . TOUHIDA CDRFDRATIUN
TOSHIBA IM?SCRlrTE/()PT()y ''in oclruvriiso DOLE?!” [I [r
9097250 TOSHIBA (DISCRETE/OPTO) 990 16747 trr-eq-e
SEMICONDUCTOR
HIBA 2 s K 7 a e
Tos TECHNICAL DATA i
ID - ng ID - 1rDte
ammo" SOURCE T common eouncz Terr. 25b
Tc=25‘c
mum cumzrr 11,0.)
mu cummm' ID(A)
2 4 V03: "
o 1 2 s 4 ti s o 20 40 so BO 100 120
1mAIN-B00Wm vonuoz V135 (v) _ DRATN-B00RM VOLTAGE VDH(V)
VDs - Vos
ID - Irate 10
20 a COMMON souncz
COMMON sounez t e Tc=25'C
A m Ds=2ov g
n ts A 6
" 12 g:
_ ii g 6
a 4 100 ID= IA
o Ter-tist: o 4 a 12 18 20 "
o 2 l e 8 10 12 aum-souxcs VOLTAGE vas(v)
GATE-tmow" VOLTAGE votstv)
_ Rns(ou) - Tc
_ _ _ Rm: 0 -I _ LO
( N) D comm" eouncm
COMMON sounca: Vas=1°V
u A _ A 08
tt Te---atrt3 ct
.. 'A 'r-',
o E o a 06
a la' a a
il,it Ev?
, 3 t g "
= , Vag=15v = ,
a 'i' 02
1 s 5 " so so -4o o 40 so 120 160
15me CURRENT 100) GASE TEMPERATURE To (TO
" - 4. _ - .. - EGA-28K788-3
.e.. .,. ._ . - ' -116-
g'rmzm' " . a " TOSHIBA CORPORATION
TOSHIBA {DISCRETE/OPTO}
nn oii:liruvrizsio 00140700
9097250 TQSHIBA tDrSCRETEfOPTO) 990 16748 01"?
TOSHIBA SEMICONDUCTOR
2 S K 7 8 te
. TECHNICAL DATA
'Yfal - ID IDR - VDs
GATE THRESHOLD VOLTAGE vth (V)
COMMON SOURCE
VDs -. 2 ov
Te-loot,
" 0.5 1
DRAIN 00mm ID (A)
CAPACITANCE -- VDS
cpmmn saunas
Irate - "
f-IMHz
" - 2 at
0.3 1 s 10 " mo
DRAIN-BOUROE VOLTAGE VDS (v)
Irth - Tc
COMMON SOURCE
VDB - 10V
ID‘J. m
OABE TEMPERATURE Te tt9
-20 20 60 140
_ -117-
DRAIN REVERSE CURRENT I’m (A)
eumamo rm 1: (no)
nmm—souncz venues V” (v)
COMMON SOURCE
GO Tc-za’c
08-01 -1V
-o.4. - - - - - '
DRAIN-BOURGE VOLTAGE v95 (v)
SWITCHING TIME - ID
COMMON SOURCE
VDD Eq 200V
Te - 2 st:
.3 Von“:
5 mm: 031005 VIN RL
50.5% J, I g
V I <5na
IN trstf 10m! V00
" 1 a 10 ao 100
DRAIN oumur ID (A)
DYNAMI C INPUT/OUTPUT CHARACTER! STICS
comm» SOURCE
ID - 1 6A
To - 2 "
o 20 40 so so 100
TOTAL GATE CHARM: 0,8 tno)
OATE-BOURCE vommn v“ (v)
EGA-28K788-4
TOSHIBA CORPORATION
TOSHIBA tI)ISCeirTii:/0pT()y
nn DED‘lD‘17250 001mm 3 [r
9097250 TOSHIBA (D I SCRETE IOPTD)
SEMICONDUCTOR
TECHNICAL DATA
TOSHIBA
990 16749 D-r-Bet-ls
2SK788
rth( t)/Rth(Ch'—°)
NORMALIZED TRAKBIENT
TWL IHPEDANCE
0.03 0.0
1011 10011
mum POWER DISSIPATION pp (w)
o IO BO
Tth - tw
SINGLE PULSE
In 10m
puma WIDTH " (e)
120 160
ms): TEMPERATURE Tc (th
PWULIL
mty- t/T
ttthots-e) - 0.83%
100:: 1 10
SAFE OPERATI NO AREA
ID MAxxPuLsED)*
DRAIN CURRENT 1D (A)
*BINOLE NONREPETITIVE
PULSE Tc-zsc
o.1 CURVES nus? BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
G 10 GO 100 ago 1000
DRAItl-tt00ttt3B VOLTAGE v93 (v)
EGA-2SK788-5
TOSHIBA CORPORATION
www.ic-phoenix.com
.
