2SK711 ,Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier ApplicationsApplications High |Y |: |Y | = 25 mS (typ.) fs fs Low C : C = 7.5 pF (typ.) iss iss Maximum ..
2SK711-BL , High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK711-V , High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK711-V , High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK724 ,N-CHANNEL SILICON POWER MOSFETFeatures
OHigh speed switching
. Low on-resistance
0N0 secondary breakdown
oLow driving p ..
2SK725 ,N-CHANNEL SILICON POWER MOS-FETApplications
1 IGatg
q Switching regulators ggggco
. UPS - LL 0.5 t5
5.45 5.45
- I H
oD ..
3LP01C ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C-TB-E , General-Purpose Switching Device Applications
3LP01M ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01M-TL-E , General-Purpose Switching Device Applications
3LP01S ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01SS ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK711
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK711 High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low Ciss: Ciss = 7.5 pF (typ.)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Crss VDS � 5 V, ID � 0 mA, f � 1 MHz
Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA (G) (L) (V) ( ).......IDSS rank marking
Unit: mm
Weight: 0.012 g (typ.)
