2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
tg-tTXT-iT-Terai';'.-',",',,". renagmmnwmun "mm. mgv'v te2'rrH'erF'Prrri""
MOS FIELD E ..
2SK684 , SILICON N-CHANNEL MOS FET
2SK690 ,Gallium Arsenide DevicesElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit1, 2*Drain curren ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
2SK701 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
3LN01S ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LN02C ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN02M ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN03M ,Switching DeviceMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSS ..
3LN03SS ,Switching DeviceAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LP01C ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK681
