2SK680A ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC . . . CONDITIONS
Drain Cut-off Current V ..
2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
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MOS FIELD E ..
2SK684 , SILICON N-CHANNEL MOS FET
2SK690 ,Gallium Arsenide DevicesElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit1, 2*Drain curren ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01S ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LN02C ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK680A
