2SK679A ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
2SK680 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC . . . CONDITIONS
Drain Cut-off Current V ..
2SK680A ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC . . . CONDITIONS
Drain Cut-off Current V ..
2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
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MOS FIELD E ..
2SK684 , SILICON N-CHANNEL MOS FET
2SK690 ,Gallium Arsenide DevicesElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit1, 2*Drain curren ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01S ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LN02C ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK679A
