2SK678 ,2SK678
2SK679 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
2SK679A ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
2SK680 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC . . . CONDITIONS
Drain Cut-off Current V ..
2SK680A ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC . . . CONDITIONS
Drain Cut-off Current V ..
2SK681 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING====r:
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MOS FIELD E ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01S ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3LN02C ,PicoMOSFET SeriesAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK678
2SK678
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28K678 (7T-MOSII)
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_ 3.0 ' H
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1.0-0'25 N
:vth---t0--4.0v(vos---ioir, ID=lmA) -
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TOSHIBA 212
$2tiittMtttt ( Ta==25''C)
ZSK678
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'' - r Vi n tlt ii: loss VGS=i20v. VDS=0V - - - nA
F' v 4 y u R. m E it, 1ms vnszsoov, sz=0v - - 300 PA
l-‘V4 V . y-STM 'ttNIUE V(BR)DSS ID =10mA. VGS=0V 500 - - V
' - r L 2 In tt Rt Bi vo VDS=10V. ID=lmA 2.0 - 4.0 v
rww- v --sivrtlett RDS(0N) ID--- TA, VGS=10V _ 0.32 0.40 n
' ttg ft ar r' s a y z lynsl VDS= 10A, ID=7A 6.0 9.0 _ s
A 73 fr i Ciss _ 2300 3600
m M tf I Crss VDS=10V, sz=0v, f=lMHz - 450 680 "
0: 73 E i Coss - 1000 1400
l I m; m: tr m ID=7AM - 70 140
z4vf7/ (--:isHitrg ton Vesov RL=3on - 100 200 ns
E? M T 5% 65 M tt son - 75 150
(-ricreer4) toft Mj,tslst,"i,5psiu; VDD$210V - 350 700
If -- r A lr Xt m E _ - 85 110
y - r . V _ 1 M m FrE Qgs VDDi400V, VGS=10V, ID=13A _ 47 - nC
y-r. F'vw4wl'ssTtltfp5St di - 35 -
V-A . F124 vM6r4 8-- F'tDrettiht.ttt( Ta=25°C)
IE B te q 8lll E ' ft Atrjh ttrm EX Aitt
F've4.wittRtttt(at2) IDR _ - - 13
vammm: (Am) Imp - - - 52
I 4 * - F" IE tit E VDSF IDR=13A, VGS=0V - _ --i8 V
m a a; NI trr IDR=13A, VGS=0V - 400 - ns
' © a E E? a Qrr dray"dt:--100sos - 4.0 - pt?
TOSHIBA
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