2SK664 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK665 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK669 ,N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch ApplicationsOrdering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Swit ..
2SK678 ,2SK678
2SK679 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
2SK679A ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
3KBP04M ,Diodes Document Number 888882 03-Dec-04Average Forward Current (A)Peak Forward Surge Current (A)3KBP005M ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01S ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK664
