2SK596-C ,V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone applicationFeaturesI) II 733707E 000323” 7 IIT-iyi)riiii" _ -N-ChannelJunction Silicon FETCapacitor iii"i"i"i' ..
2SK601 ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitDrain to source cu ..
2SK606 ,Silicon N Channel Junction TypeMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK608 ,Silicon N Channel Junction TypeMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK611 ,MOS FIELD EFFECT POWER TRANSISTORPACKAGE DIMENSIONS (Unit: mm)
1. Gm
2. Drain
3. Source
a. Drain
MOS FIELD EFFECT POWER T ..
2SK612 ,MOS Field Effect Power Transistors
3HN04MH , N-Channel Silicon MOSFET General-Purpose Switching Device
3KBP04M ,Diodes Document Number 888882 03-Dec-04Average Forward Current (A)Peak Forward Surge Current (A)3KBP005M ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
3LN01M ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2158 · 2.5V dri ..
3LN01M ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK596B-2SK596-B-2SK596C-2SK596-C
